H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix
Référence : H5AN8G4NCJR-xxC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $10.1 | $1 010,00 |
| 500 | $9 | $4 500,00 |
| 1 000 | $8.5 | $8 500,00 |
H5AN8G4NCJR-xxC Présentation
DDR4 SDRAM is a type of synchronous dynamic random-access memory that doubles the data rate of its predecessor DDR3, operating at higher speeds and lower voltages (typically 1.2V). It is the industry standard for main memory in servers, desktops, laptops, and networking equipment, providing the high bandwidth and density required for modern computing workloads. DDR4 memory is part of the broader DRAM family, which includes DDR3, DDR4, and DDR5, and is essential for system performance in applications ranging from cloud computing to artificial intelligence.
Key features of the H5AN8G4NCJR-xxC include a density of 8Gb, a data rate that supports high-speed operation (specific speed grade indicated by the xxC suffix), and a FBGA package that enables compact, high-density board designs. The device operates with a 1.2V power supply, reducing power consumption compared to earlier generations. It also supports on-die termination (ODT) and programmable read/write latencies, allowing system designers to optimize signal integrity and timing.
Technically, the H5AN8G4NCJR-xxC uses a CMOS process and features an 8n-prefetch architecture, which allows it to transfer 8 data bits per clock cycle per pin, achieving high bandwidth. The device includes auto-refresh and self-refresh modes for low-power standby, and it supports a burst length of 8 (BL8) for efficient data transfer. The FBGA package provides excellent thermal and electrical performance, with a ball pitch that supports high-speed signaling.
Typical applications include servers, data centers, networking equipment, and high-performance computing systems where large memory capacity and high bandwidth are critical. The device is also used in consumer electronics such as high-end desktops and gaming consoles, where DDR4 memory is the standard. Its low power consumption and high reliability make it suitable for enterprise storage and cloud infrastructure.
When designing with this device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The device requires a stable 1.2V power supply and a reference voltage (VREF) for optimal operation. Consider using the on-die termination feature to match impedance and reduce reflections on the data bus.
Alternatives de remplacement direct pour H5AN8G4NCJR-xxC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G4NCJR-xxC (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Memory Type, Density, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NCJR-xxC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN8G6NCJR-xxC
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646D-BYK00
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.5 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →H5AN8G4NCJR-xxC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8Gb |
| Organisation de la mémoire | x4 (H5AN8G4NCJR) |
| Tension d'alimentation | 1.2V |
| Boîtier | FBGA |
| RoHS | Compliant |
| Lead-Free | Yes |
| Sans halogène | Yes |
| Type de montage | Surface Mount |
| Prefetch | 8-bit |
| Burst Length | 8 (BL8) |
| Refresh | Auto-refresh and self-refresh |
| On-Die Termination | Yes |
Configuration des broches de H5AN8G4NCJR-xxC
| Broche A0-A15 | Address Inputs — Row/column address inputs |
| Broche BA0-BA1 | Bank Address Inputs — Bank select |
| Broche BG0-BG1 | Bank Group Inputs — Bank group select |
| Broche DQ0-DQ3 | Data Input/Output — Data bus (x4) |
| Broche DQS | Data Strobe — Data strobe |
| Broche CK, CK# | Clock — Differential clock |
| Broche CKE | Clock Enable — Activates clock |
| Broche CS# | Chip Select — Selects device |
| Broche RAS# | Row Address Strobe — Row command |
| Broche CAS# | Column Address Strobe — Column command |
| Broche WE# | Write Enable — Write command |
| Broche ODT | On-Die Termination — Termination control |
| Broche VDD | Power Supply — 1.2V core supply |
| Broche VDDQ | I/O Power Supply — 1.2V I/O supply |
| Broche VSS | Ground — Ground |
Applications typiques
H5AN8G4NCJR-xxC convient pour 6 applications: Server Main Memory, Networking Equipment, Data Center Storage, High-Performance Computing, Consumer Desktop PCs, Embedded Systems.
Server Main Memory
The H5AN8G4NCJR-xxC provides high-density, high-bandwidth memory for server applications. Its 8Gb density and DDR4 speed enable large memory pools for virtualization, cloud computing, and database workloads. The x4 organization supports ECC and advanced reliability features, making it ideal for enterprise servers where data integrity is critical. The low 1.2V operation reduces power consumption in dense memory configurations, improving overall system efficiency.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G4NCJR-xxC offers the high bandwidth needed for packet processing and forwarding. Its 8Gb density allows for large routing tables and buffering, while the DDR4 interface supports high-speed data transfer. The FBGA package is suitable for compact line cards, and the low power consumption helps manage thermal budgets in dense chassis. The device's reliability ensures stable operation in 24/7 environments.
Recommandé
Data Center Storage
The H5AN8G4NCJR-xxC is used in data center storage systems, including SSDs and storage servers, where high memory bandwidth and capacity are essential for caching and metadata management. Its 8Gb density enables large cache pools, improving read/write performance. The DDR4 interface provides the speed needed to keep up with NVMe and SAS controllers. The device's low power consumption is beneficial in power-constrained data centers, and its RoHS compliance meets environmental standards.
Recommandé
High-Performance Computing
In HPC systems, the H5AN8G4NCJR-xxC provides the memory bandwidth required for complex simulations and scientific computing. Its 8Gb density allows for large memory footprints, while the DDR4 speed supports high data throughput. The x4 organization is often used in HPC memory modules to achieve higher capacity per rank. The device's low latency and high reliability are critical for long-running compute jobs, and its 1.2V operation reduces power consumption in large clusters.
Recommandé
Consumer Desktop PCs
The H5AN8G4NCJR-xxC is suitable for high-end desktop PCs, providing the memory capacity and speed needed for gaming, content creation, and multitasking. Its 8Gb density allows for 16GB or 32GB memory configurations, while DDR4 speeds ensure smooth performance. The FBGA package is compatible with standard DIMM sockets, and the low power consumption helps keep system temperatures down. The device's reliability ensures stable operation for everyday use.
Recommandé
Embedded Systems
In embedded systems, the H5AN8G4NCJR-xxC offers high-density memory for applications such as industrial controllers, medical devices, and automotive infotainment. Its 8Gb density provides ample storage for firmware and data, while the DDR4 interface supports high-speed processing. The FBGA package is suitable for compact PCBs, and the device's low power consumption is ideal for battery-powered or thermally constrained designs. Its RoHS compliance meets regulatory requirements.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G4NCJR-xxC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NCJR-xxC | H5AN8G6NCJR-xxC | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | FBGA | FBGA | FBGA | FBGA | FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron | Samsung |
| Density | 8Gb | 8Gb | 8Gb | 4Gb | 4Gb |
| Organization | x4 | x8 | x16 | x16 | x16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.35V (DDR3L) | 1.35V (DDR3L) |
| Memory Type | DDR4 | DDR4 | DDR4 | DDR3L | DDR3L |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- x4 organization enables higher density per rank (vs H5AN8G8NCJR-xxC)
- DDR4 technology with lower power consumption (vs MT41K256M16HA-125)
- Higher density per device (vs K4B4G1646D-BYK0)
Notes de conception
For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 10 mils for data and address buses. Use ground planes to minimize noise and ensure proper return paths. Follow the manufacturer's layout guidelines for the FBGA package to ensure reliable soldering.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close to the pins as possible. Use a dedicated power plane for 1.2V and ensure low impedance at high frequencies. The VREF pin should be bypassed with a 0.1uF capacitor to ground. Proper power integrity is essential for stable DDR4 operation.
The FBGA package has a thermal resistance that depends on PCB design. Ensure adequate airflow and consider adding thermal vias under the package to improve heat dissipation. The device's power consumption is relatively low, but in dense memory arrays, thermal management is important to maintain reliability. Monitor junction temperature to stay within the specified range.
Informations de conformité
Lead-Free and Halogen-Free per datasheet. RoHS compliant. No AEC-Q100 qualification for memory components.
