NT6AN8T0SA - 2Gb LPDDR2 SDRAM | Nanya Technology
Référence : NT6AN8T0SA ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.05 | $40,50 |
| 100 | $3.6 | $360,00 |
| 500 | $3.24 | $1 620,00 |
| 1 000 | $2.88 | $2 880,00 |
NT6AN8T0SA Présentation
LPDDR2 (Low Power Double Data Rate 2) SDRAM is a type of synchronous dynamic random-access memory optimized for low power consumption in mobile and embedded systems. It is part of the DDR memory family, which includes DDR2, DDR3, and DDR4, but is specifically designed to operate at lower voltages (1.2V) and provide power-saving features such as deep power-down and partial-array self-refresh. LPDDR2 is widely used in smartphones, tablets, and portable consumer electronics, where battery life is a primary concern.
Key features of the NT6AN8T0SA include a 2Gb density, a 32-bit I/O width, and support for data rates up to 1066 Mbps (533 MHz). The device operates from a 1.2V power supply, with an I/O voltage of 1.2V, and supports a temperature range of -30°C to +85°C. It includes features such as programmable latency, burst length of 4 or 8, and on-die termination (ODT) for improved signal integrity. The device is RoHS compliant and lead-free, meeting environmental standards.
Technically, the NT6AN8T0SA utilizes a 4-bank architecture with a 2Gb density, organized as 64M x 32. It supports auto-refresh and self-refresh modes, with a refresh period of 64ms at 85°C. The device features a programmable output driver impedance and supports DLL (Delay-Locked Loop) for precise timing. The low-voltage operation and advanced power management features make it suitable for always-on applications, such as IoT devices and wearables.
Typical applications include smartphones, tablets, portable media players, and embedded systems requiring high memory bandwidth with minimal power consumption. The NT6AN8T0SA is also used in automotive infotainment systems and industrial handheld devices where reliability and low power are essential.
When designing with the NT6AN8T0SA, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable 1.2V supply and careful PCB layout to maintain signal integrity at high data rates. Refer to the manufacturer's datasheet for detailed timing and layout guidelines.
Alternatives de remplacement direct pour NT6AN8T0SA — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT6AN8T0SA (même facteur de forme et même empreinte) — différant par Package, Data Rate, Memory Size, Memory Type, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT6AN128T32AV-J2
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN8G6NDJR-XNC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$55.6818 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →MT40A512M16JY-07EAIT:B
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$8.1 / unité
Voir la fiche technique →W634GU6RB12I
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →NT6AN8T0SA Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR2 SDRAM |
| Density | 2Gb |
| Organisation de la mémoire | 64M x 32 |
| Tension d'alimentation | 1.2V |
| I/O Voltage | 1.2V |
| Débit de données | 1066 Mbps (533 MHz) |
| Plage de température de fonctionnement | -30°C to +85°C |
| Boîtier | FBGA |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| Lead-Free | Yes |
| Refresh Period | 64ms at 85°C |
| Burst Length | 4 or 8 |
| On-Die Termination | Yes |
| DLL | Yes |
Configuration des broches de NT6AN8T0SA
| Broche A1 | VDD1 — Core power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VDDQ — I/O power supply (1.2V) |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VSS — Ground |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | CK — Clock input |
| Broche D2 | CK# — Complementary clock input |
| Broche D3 | CKE — Clock enable |
Applications typiques
NT6AN8T0SA convient pour 6 applications: Smartphones, Tablets, Portable Media Players, IoT Devices, Automotive Infotainment, Industrial Handheld Devices.
Smartphones
The NT6AN8T0SA provides 2Gb of low-power LPDDR2 memory, ideal for smartphones that require efficient memory for multitasking and app performance. Its 1.2V operation extends battery life, while the 1066 Mbps data rate supports smooth UI and HD video playback. The compact FBGA package fits the tight PCB constraints of modern handsets.
Recommandé
Tablets
Tablets demand high memory bandwidth for media consumption and productivity. The NT6AN8T0SA's 2Gb density and 32-bit interface provide sufficient bandwidth for HD video and gaming. Its low power consumption is crucial for long battery life, and the FBGA package enables thin tablet designs. The device supports deep power-down modes for idle states.
Recommandé
Portable Media Players
Portable media players require reliable, low-power memory for audio and video playback. The NT6AN8T0SA offers 2Gb capacity, sufficient for storing and buffering media files. Its 1.2V operation minimizes power draw, extending playback time. The device's self-refresh mode maintains data integrity while conserving power during pauses.
Recommandé
IoT Devices
IoT devices often run on batteries and require low-power memory for data logging and connectivity. The NT6AN8T0SA's 1.2V operation and power-saving features make it ideal for always-on IoT applications. Its 2Gb density provides ample space for firmware and data buffers. The device supports partial-array self-refresh, reducing power consumption when only a portion of memory is used.
Recommandé
Automotive Infotainment
Automotive infotainment systems require robust memory that can operate over a wide temperature range. The NT6AN8T0SA operates from -30°C to +85°C, making it suitable for in-vehicle environments. Its 2Gb density supports navigation maps and multimedia content. The device's high data rate ensures responsive user interfaces.
Recommandé
Industrial Handheld Devices
Industrial handheld devices, such as barcode scanners and portable test equipment, require reliable memory in harsh conditions. The NT6AN8T0SA's wide temperature range and low power consumption make it suitable for field use. Its 2Gb density provides storage for application code and data logs. The device's robust design ensures long-term reliability.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT6AN8T0SA — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT6AN128T32AV-J2 | H5AN8G6NDJR-XNC | K4A8G085WB-BIWE |
|---|---|---|---|---|
| Package | FBGA | FBGA | FBGA | FBGA |
| Brand | Nanya Technology | Nanya Technology | SK Hynix | Samsung |
| Memory Type | LPDDR2 | LPDDR2 | LPDDR4 | LPDDR4 |
| Density | 2Gb | 2Gb/4Gb (DDP) | 8Gb | 8Gb |
| Supply Voltage | 1.2V | 1.2V | 1.1V | 1.1V |
| Data Rate | 1066 Mbps | 1066 Mbps | 3200 Mbps | 3200 Mbps |
| Operating Temperature | -30°C to +85°C | -30°C to +85°C | -25°C to +85°C | -25°C to +85°C |
| Pin Compatibility | LPDDR2 pinout | Likely compatible | Not compatible | Not compatible |
Principaux différenciateurs
- Low power consumption at 1.2V (vs H5AN8G6NDJR-XNC)
- Cost-effective 2Gb density (vs K4A8G085WB-BIWE)
- Wide temperature range (vs MT40A512M16JY-07EAIT:B)
Notes de conception
The NT6AN8T0SA requires a stable 1.2V supply for both VDD and VDDQ. Use low-ESR ceramic capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. A bulk capacitor (10uF) should be placed near the memory device to handle transient currents during read/write operations.
For high-speed signals (DQ, DQS, CK), maintain controlled impedance of 50 ohms single-ended and 100 ohms differential. Keep trace lengths matched within +/- 0.5mm for data and clock groups to minimize skew. Avoid vias on high-speed traces where possible, and provide a solid ground plane beneath the memory device.
The NT6AN8T0SA has a maximum operating temperature of 85°C. In high-ambient-temperature applications, ensure adequate airflow or thermal vias under the FBGA package to dissipate heat. The device's power dissipation is typically low due to 1.2V operation, but verify thermal performance in your specific layout.
Informations de conformité
RoHS compliant and lead-free per Nanya Technology datasheet. AEC-Q100 not applicable for this commercial-grade memory.
