K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
Référence : K4B4G1646D-BMK0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $5.9 | $5 900,00 |
K4B4G1646D-BMK0 Présentation
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15-20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BMK0 is a key component in the memory hierarchy, providing high-speed data storage and retrieval for processors and controllers.
Key features include a density of 4Gb, an organization of 256M x 16, and a data rate of 1600 Mbps. The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 96FBGA package offers a compact footprint with excellent thermal and electrical performance. The device is also lead-free and halogen-free, ensuring environmental compliance.
Technically, the K4B4G1646D-BMK0 utilizes Samsung's advanced D-die process technology, which enhances performance and reliability. The device features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It supports auto self-refresh and partial array self-refresh for power saving. The 1.35V operation reduces power dissipation, making it ideal for battery-powered and thermally constrained systems.
Typical applications include industrial computing, networking equipment, automotive infotainment, and medical devices. The wide temperature range and low power consumption make it suitable for harsh environments. In networking, it provides high-bandwidth memory for routers and switches; in automotive, it supports advanced driver-assistance systems (ADAS) and infotainment; in medical, it enables reliable data processing in diagnostic equipment.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, and the reference voltage (VREF) should be carefully routed. For high-speed operation, impedance matching and trace length matching are critical.
Alternatives de remplacement direct pour K4B4G1646D-BMK0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BMK0 (même facteur de forme et même empreinte) — différant par Data Rate, Package, CAS Latency, Operating Temperature, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646D-BMH9
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646E-BYK0
✅ Remplacement direct✓ En stock
$1.8 / unité
Voir la fiche technique →K4B4G1646F-BYK0
✅ Remplacement direct✓ En stock
$1.8 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →NT5CB256M16CP-DI
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →IS43TR16256A-125KBLA2
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646D-BMK0 Valeurs maximales et caractéristiques électriques
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) |
| Voltage | 1.35 V |
| Température de fonctionnement | -40°C to 95°C |
| Boîtier | 96FBGA (TFBGA) |
| Type de mémoire | DDR3L SDRAM |
| Die Version | D-die |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Number of Terminals | 96 |
| Package Code | TFBGA |
| Number of Functions | 1 |
| Débit de données | 1600 Mbps |
Configuration des broches de K4B4G1646D-BMK0
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VDDQ — I/O power supply |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VSSQ — I/O ground |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VDDQ — I/O power supply |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VSSQ — I/O ground |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VSS — Ground |
| Broche C2 | DQS0 — Data strobe 0 |
| Broche C3 | DQS#0 — Data strobe 0 complement |
| Broche C4 | VDD — Power supply |
| Broche C5 | DQS1 — Data strobe 1 |
| Broche C6 | DQS#1 — Data strobe 1 complement |
| Broche C7 | VSS — Ground |
| Broche C8 | DQS2 — Data strobe 2 |
| Broche C9 | DQS#2 — Data strobe 2 complement |
| Broche C10 | VDD — Power supply |
| Broche C11 | DQS3 — Data strobe 3 |
| Broche C12 | DQS#3 — Data strobe 3 complement |
| Broche D1 | VDDQ — I/O power supply |
| Broche D2 | DM0 — Data mask 0 |
| Broche D3 | VSSQ — I/O ground |
| Broche D4 | DM1 — Data mask 1 |
| Broche D5 | VDDQ — I/O power supply |
| Broche D6 | DM2 — Data mask 2 |
| Broche D7 | VSSQ — I/O ground |
| Broche D8 | DM3 — Data mask 3 |
| Broche D9 | VDDQ — I/O power supply |
| Broche D10 | VSSQ — I/O ground |
| Broche D11 | VDDQ — I/O power supply |
| Broche D12 | VSSQ — I/O ground |
| Broche E1 | A0 — Address input 0 |
| Broche E2 | A1 — Address input 1 |
| Broche E3 | A2 — Address input 2 |
| Broche E4 | A3 — Address input 3 |
| Broche E5 | A4 — Address input 4 |
| Broche E6 | A5 — Address input 5 |
| Broche E7 | A6 — Address input 6 |
| Broche E8 | A7 — Address input 7 |
| Broche E9 | A8 — Address input 8 |
| Broche E10 | A9 — Address input 9 |
| Broche E11 | A10/AP — Address input 10 / auto-precharge |
| Broche E12 | A11 — Address input 11 |
| Broche F1 | A12 — Address input 12 |
| Broche F2 | A13 — Address input 13 |
| Broche F3 | A14 — Address input 14 |
| Broche F4 | BA0 — Bank address 0 |
| Broche F5 | BA1 — Bank address 1 |
| Broche F6 | BA2 — Bank address 2 |
| Broche F7 | RAS# — Row address strobe |
| Broche F8 | CAS# — Column address strobe |
| Broche F9 | WE# — Write enable |
| Broche F10 | CS# — Chip select |
| Broche F11 | CKE — Clock enable |
| Broche F12 | ODT — On-die termination |
| Broche G1 | VDD — Power supply |
| Broche G2 | VSS — Ground |
| Broche G3 | VDD — Power supply |
| Broche G4 | VSS — Ground |
| Broche G5 | VDD — Power supply |
| Broche G6 | VSS — Ground |
| Broche G7 | VDD — Power supply |
| Broche G8 | VSS — Ground |
| Broche G9 | VDD — Power supply |
| Broche G10 | VSS — Ground |
| Broche G11 | VDD — Power supply |
| Broche G12 | VSS — Ground |
| Broche H1 | CK — Clock input |
| Broche H2 | CK# — Clock input complement |
| Broche H3 | VDDQ — I/O power supply |
| Broche H4 | VSSQ — I/O ground |
| Broche H5 | VDDQ — I/O power supply |
| Broche H6 | VSSQ — I/O ground |
| Broche H7 | VDDQ — I/O power supply |
| Broche H8 | VSSQ — I/O ground |
| Broche H9 | VDDQ — I/O power supply |
| Broche H10 | VSSQ — I/O ground |
| Broche H11 | VDDQ — I/O power supply |
| Broche H12 | VSSQ — I/O ground |
| Broche J1 | RESET# — Reset input |
| Broche J2 | VDD — Power supply |
| Broche J3 | VSS — Ground |
| Broche J4 | VDD — Power supply |
| Broche J5 | VSS — Ground |
| Broche J6 | VDD — Power supply |
| Broche J7 | VSS — Ground |
| Broche J8 | VDD — Power supply |
| Broche J9 | VSS — Ground |
| Broche J10 | VDD — Power supply |
| Broche J11 | VSS — Ground |
| Broche J12 | VDD — Power supply |
Applications typiques
K4B4G1646D-BMK0 convient pour 6 applications: Industrial Computing, Networking Equipment, Automotive Infotainment, Medical Devices, Embedded Systems, Test and Measurement.
Industrial Computing
The K4B4G1646D-BMK0 is ideal for industrial computing systems that require reliable operation in harsh environments. Its industrial temperature range (-40°C to 95°C) ensures functionality in extreme conditions, while the 1.35V low-voltage operation reduces power consumption and heat generation. The 1600 Mbps data rate provides sufficient bandwidth for industrial control and data acquisition. In PLCs and industrial PCs, this memory supports real-time processing and data logging. The 96FBGA package offers a compact footprint for space-constrained designs. Recommended companion products include the NXP i.MX6ULL processor and the TI TPS51200 DDR termination regulator.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646D-BMK0 provides high-bandwidth memory for packet buffering and forwarding. The 1600 Mbps data rate supports high-throughput data processing, while the 1.35V operation minimizes power dissipation in dense line cards. The industrial temperature range allows deployment in uncontrolled environments like remote telecom shelters. The 256M x 16 organization offers a good balance between capacity and bus width, simplifying PCB routing. For optimal performance, pair with a network processor like the Intel IXP2800 and use proper decoupling capacitors. The device's low power consumption also aids in meeting energy efficiency standards.
Recommandé
Automotive Infotainment
The K4B4G1646D-BMK0 is suitable for automotive infotainment systems that require robust memory in a wide temperature range. Its -40°C to 95°C operating range covers automotive cabin and under-hood conditions. The 1.35V low-voltage operation reduces power consumption, which is critical in vehicles with limited electrical budgets. The 1600 Mbps speed supports smooth multimedia playback and navigation. The 96FBGA package is compact and reliable for vibration-prone environments. For automotive applications, consider using the AEC-Q100 qualified version if available. Pair with an automotive-grade SoC like the Qualcomm Snapdragon Automotive Platform and ensure proper EMC protection.
Recommandé
Medical Devices
In medical devices such as patient monitors and diagnostic equipment, the K4B4G1646D-BMK0 provides reliable memory for data acquisition and processing. The industrial temperature range ensures operation in clinical environments, and the low power consumption is beneficial for battery-powered portable devices. The 1600 Mbps data rate supports real-time signal processing and image rendering. The lead-free and halogen-free construction meets medical device environmental standards. The 96FBGA package allows for compact PCB designs, which is essential for handheld devices. For medical applications, ensure compliance with IEC 60601 standards and use isolated power supplies. Pair with a medical-grade microcontroller like the STM32L4 series.
Recommandé
Embedded Systems
The K4B4G1646D-BMK0 is a versatile memory solution for embedded systems requiring a balance of performance and power efficiency. Its 1.35V operation reduces power consumption, making it ideal for battery-powered IoT devices and portable instruments. The 1600 Mbps data rate provides ample bandwidth for embedded processors and FPGAs. The industrial temperature range supports outdoor and industrial deployments. The 96FBGA package is suitable for space-constrained designs. For embedded applications, consider using a processor with a DDR3L controller, such as the NXP i.MX6 or Xilinx Zynq. Ensure proper signal integrity by following layout guidelines in the datasheet.
Recommandé
Test and Measurement
In test and measurement equipment like oscilloscopes and logic analyzers, the K4B4G1646D-BMK0 provides high-speed memory for data buffering and waveform storage. The 1600 Mbps data rate enables fast data acquisition, while the 1.35V operation reduces heat in benchtop instruments. The industrial temperature range ensures stable operation in lab environments. The 256M x 16 organization offers sufficient depth for long recordings. The 96FBGA package allows for compact instrument designs. For high-speed data capture, pair with an FPGA like the Xilinx Kintex-7 and use proper termination. The device's low power consumption also contributes to energy-efficient instruments.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BMK0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646D-BMH9 | K4B4G1646E-BYK0 | MT41K256M16HA-125 | NT5CB256M16CP-DI |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA | 96FBGA | 96FBGA | 96FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Nanya Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Operating Temperature | -40°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | -40°C to 95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Industrial temperature range (-40°C to 95°C) (vs K4B4G1646D-BMH9)
- Lower speed grade (1600 Mbps) for lower power (vs K4B4G1646E-BYK0)
- Samsung D-die proven reliability (vs MT41K256M16HA-125)
Notes de conception
For high-speed DDR3L signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within +/- 0.5mm for DQ/DQS groups. Use ground planes beneath the memory to reduce noise. Refer to the Samsung PCB layout guidelines in the datasheet.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed as close as possible to the pins. Use a dedicated VTT regulator for the termination voltage, such as the TI TPS51200, to provide 0.675V for DDR3L. Ensure the VREF voltage is clean and stable, typically 0.675V, and route it away from switching noise.
The K4B4G1646D-BMK0 has a maximum power dissipation of approximately 1.5W at 1600 Mbps. Ensure adequate airflow or a thermal pad to the PCB to keep the junction temperature below 95°C. In industrial environments, consider using a heatsink if the ambient temperature exceeds 70°C.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. AEC-Q100 not applicable for memory components.
