H5AN8G8NAFR-UHC - 8Gb DDR4 SDRAM 2400Mbps | SK Hynix
Référence : H5AN8G8NAFR-UHC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
H5AN8G8NAFR-UHC Présentation
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a class of volatile memory that sits within the broader hierarchy of DRAM -> semiconductor memory -> memory ICs. Compared with DDR3, DDR4 lowers the operating voltage from 1.5V to 1.2V, increases bank counts, and raises transfer rates, allowing system designers to achieve higher bandwidth at lower power - a key requirement for servers, workstations, and high-performance embedded platforms.
Key features of this device include the 8Gbit density (1G x 8 organization), DDR4-2400 speed grade (UHC suffix), and lead-free and halogen-free construction with RoHS compliance, as stated in the SK Hynix datasheet. The x8 organization simplifies DRAM controller interfacing and supports single-device ECC deployments in embedded designs where a full 64-bit or 72-bit bus is not practical.
Architecturally, the part belongs to the H5AN8GNAFR family (H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC, H5AN8G6NAFR-xxC), which shares a common die and FBGA-78 footprint across x4, x8, and x16 organizations. The CMOS process, internal bank architecture, and DDR4 protocol features such as bank groups enable the sustained 2400 Mbps/pin bandwidth required by modern memory controllers.
Typical applications include server and workstation main memory modules (UDIMM, RDIMM, SODIMM), industrial computing and embedded boards with soldered-down DDR4, networking equipment line-card memory, and set-top or smart-TV system memory. In each case the 8Gb density allows high-capacity arrays with fewer devices, reducing BOM count and board area.
A key design consideration is signal integrity: at 2400 Mbps, DDR4 fly-by routing, on-die termination (ODT), VTT termination, and careful length matching of the DQ/DDR4 address buses are essential. Verify the exact speed-grade timing parameters (tCK, CL, tRCD, tRP) against the official SK Hynix datasheet for the UHC suffix before finalizing controller settings.
This page synthesizes distributor availability data, drop-in family alternatives, and practical DDR4 design notes in one place - information not consolidated in the manufacturer datasheet alone.
Alternatives de remplacement direct pour H5AN8G8NAFR-UHC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G8NAFR-UHC (même facteur de forme et même empreinte) — différant par Interface, Package, Data Rate, Organization, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NAFR-RDC
✅ Remplacement direct✓ En stock
$2.95 / unité
Voir la fiche technique →H5AN8G8NAFR-PBC
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →MT40A1G8AG-062E
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →H5AN8G8NAFR-UHC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gbit |
| Organisation de la mémoire | 1G x 8 |
| Débit de données | 2400 Mbps/pin (PC2400) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) |
| Interface | CMOS, synchronous |
| Boîtier | FBGA-78 (PBGA78) |
| Type de montage | Surface Mount |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Speed Grade Suffix | UHC |
| Statut RoHS | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory (high density, high bandwidth) |
Guide de configuration des broches du H5AN8G8NAFR-UHC fbga-78 (pbga78)
Configuration des broches du H5AN8G8NAFR-UHC (boîtier fbga-78 (pbga78)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN8G8NAFR-UHC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN8G8NAFR-UHC convient pour 6 applications: Server and Workstation Main Memory, Industrial Embedded Computing, Networking and Communication Equipment, Set-Top Box and Smart TV System Memory, Test and Measurement Instrumentation, Automotive and Rugged Embedded Platforms.
Server and Workstation Main Memory
The H5AN8G8NAFR-UHC is purpose-built for main memory: its 8Gb density and 2400 Mbps/pin data rate deliver the high bandwidth that server and workstation platforms demand. In a 64-bit ECC (72-bit) configuration, nine x8 devices provide 8 GB per rank with single-device-data-error correction support. Placed on UDIMM/RDIMM/SODIMM assemblies, the FBGA-78 package keeps signal lengths short and the fly-by address routing clean at DDR4-2400. The 1.2V VDD operation reduces memory subsystem power versus DDR3. Performance consideration: verify controller timing tables against the UHC speed bin and calibrate ODT and drive strength per the SK Hynix datasheet.
Recommandé
Industrial Embedded Computing
Soldered-down DDR4 on industrial PCs, edge controllers, and automation platforms benefits directly from the H5AN8G8NAFR-UHC. The x8 organization allows 4- or 8-device 32-/64-bit buses, and 8Gb per device means 4 GB of memory with only four components - reducing BOM count and reflow complexity on long-lifecycle industrial boards. The RoHS-compliant, lead-free, halogen-free construction supports EU-market compliance without exceptions. Performance consideration: industrial ambient temperatures and conduction-cooled enclosures require derating analysis against the datasheet's temperature and refresh specifications; confirm the UHC grade's rated operating range before deployment in extended-temperature environments.
Recommandé
Networking and Communication Equipment
Switches, routers, and network appliances use DDR4 SDRAM for packet buffers, route tables, and control-plane memory. The H5AN8G8NAFR-UHC's 2400 Mbps interface provides the sustained bandwidth needed for line-rate packet processing, and the 8Gb density supports large flow tables in compact footprints. The FBGA-78 package suits the dense, multilayer stackups typical of networking hardware. Design consideration: networking boards often mix DDR4 banks with other loads; use per-byte ODT tuning and follow the fly-by clock/address topology with VTT termination to maintain signal integrity at DDR4-2400. Verify the memory controller's supported speed bins against the UHC grade before layout release.
Recommandé
Set-Top Box and Smart TV System Memory
Consumer video platforms such as set-top boxes and smart TVs need multi-gigabyte RAM for OS, codecs, and graphics buffers. The H5AN8G8NAFR-UHC's 8Gb x8 organization provides 1 GB per device, allowing a 2 GB system with two devices or 4 GB with four - critical in cost- and space-constrained consumer boards. DDR4's 1.2V operation lowers system idle power, a key metric for always-on entertainment devices. Performance consideration: SoC memory controllers in this segment often validate specific DRAM vendor/speed combinations; confirm the UHC 2400 Mbps bin appears in the SoC vendor's memory QVL before committing to the design.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators rely on deep capture memory - often 1-16 GB of DDR4 - to store long waveform records. The H5AN8G8NAFR-UHC offers 8Gb per device at 2400 Mbps, enabling high-capacity, high-throughput capture buffers. Soldered-down FBGA-78 devices avoid SO-DIMM connector reliability issues in instruments subjected to vibration and thermal cycling. Performance consideration: sustained streaming to DRAM requires controller features such as bank interleaving across the DDR4 bank groups; design the memory schedule around the datasheet's tRFC and tFAW constraints to avoid refresh-induced throughput drops during long acquisitions.
Recommandé
Automotive and Rugged Embedded Platforms
Advanced driver-assistance and telematics platforms use DDR4 for sensor fusion and map data. The H5AN8G8NAFR-UHC's high density supports camera- and radar-buffering workloads, while the 1.2V DDR4 interface keeps power and heat manageable in sealed enclosures. The FBGA-78 soldered package withstands vibration better than socketed memory. Performance consideration: automotive platforms typically require temperature-qualified or AEC-recognized memory variants - verify with SK Hynix whether an automotive-grade suffix of this die exists for your program, as the standard UHC grade's qualification level is not stated in the verified data and must not be assumed.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G8NAFR-UHC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NAFR-RDC | H5AN8G8NAFR-PBC | MT40A1G8AG-062E |
|---|---|---|---|---|
| Package | FBGA-78 (PBGA78) | FBGA-78 - same | FBGA-78 - same | FBGA-78 - verify ball map |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Interface Type | DDR4 SDRAM, CMOS | DDR4 SDRAM, CMOS | DDR4 SDRAM, CMOS | DDR4 SDRAM, CMOS |
Principaux différenciateurs
- 8Gb density halves device count vs 4Gb DDR4 (vs H5AN4G8NBJR-UHC)
- 2400 Mbps speed class with family bin flexibility (vs H5AN8G8NAFR-RDC)
- Cross-brand second source at matched speed class (vs MT40A1G8AG-062E)
Notes de conception
At 2400 Mbps/pin, DDR4 signal integrity is the dominant design risk. Use fly-by routing for clock/address/command with per-DIMM-style VTT termination, keep DQS/DQS# strobe pairs tightly length-matched to their DQ byte group, and tune on-die termination (ODT) and output driver strength during controller write-leveling and read training. Route on controlled-impedance layers (50 ohm single-ended, 100 ohm differential) and avoid stubs on DQ nets. Simulate the full channel with IBIS models from SK Hynix before layout release; eye-margin failures at DDR4-2400 are rarely recoverable with firmware alone.
Provide separate, low-impedance planes for VDD (1.2 V core), VDDQ (1.2 V I/O), and VPP. Local decoupling should combine bulk capacitance near each device with an array of 0402/0201 ceramic caps placed within a few millimeters of the FBGA power balls. VTT termination rail must source/sink current dynamically - use a dedicated VTT regulator with adequate transient response and place its bulk capacitance at the termination resistor network midpoint. Estimated: a 9-device 72-bit rank at DDR4-2400 can draw several amps of VDDQ transient current during simultaneous bursts, so verify regulator transient specs against your controller's burst profile.
Three common pitfalls when deploying this part. First, do not assume speed-bin compatibility across suffixes: UHC, RDC, and PBC carry different AC timing tables - always load the matching timing set into the memory controller. Second, x4/x8/x16 family members (H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR) share a package but not a DQ ball arrangement - never substitute across organizations. Third, program SPD/device identification correctly for the SK Hynix die when second-sourcing against Micron (MT40A1G8AG-062E), or boot firmware may mis-train the interface.
Informations de conformité
Datasheet listing states: 8Gb DDR4 SDRAM, Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals declarations not present in verified data.
