H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix
Référence : H5AN4G8NBJR-VKC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.69 | $8,69 |
| 10 | $6.2 | $62,00 |
| 100 | $4.5 | $450,00 |
| 500 | $3.1 | $1 550,00 |
| 1 000 | $2.6 | $2 600,00 |
| 5 000 | $2.4 | $12 000,00 |
H5AN4G8NBJR-VKC Présentation
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a volatile memory technology that stores each bit in a capacitor-based cell refreshed at regular intervals. In the memory hierarchy, it sits as a main-system-memory component between CPU caches (SRAM) and storage (NAND flash), interfacing to a memory controller over a parallel, source-synchronous clocked bus. DDR4 improved on DDR3 by lowering operating voltage from 1.5 V to 1.2 V, increasing bank groups, and raising data rates up to 3200 Mbps in this generation.
Key features of the H5AN4G8NBJR-VKC include its 4Gb density in a x8 organization, 2666 Mbps data rate operation, lead-free and halogen-free construction, and the compact 78-ball FBGA (FBGA-78, 7.5 x 11 mm) surface-mount package that minimizes signal-path length for high-speed operation. The part supports standard DDR4 features such as bank group architecture, on-die termination, and DLL-based timing control per the JEDEC DDR4 specification family.
Technically, the device is a CMOS DRAM using internal bank architecture with multiple bank groups enabling faster back-to-back access. The VKC speed grade suffix denotes the 2666 Mbps commercial temperature grade (0 C to 85 C per DDR4 SDRAM conventions for the -C temperature suffix). Data is transferred on both edges of the differential clock, with command and address inputs latched on the rising edge of CK.
Typical applications include desktop and notebook PC main memory modules (UDIMM/SODIMM), embedded x86 and ARM computing platforms, networking equipment line cards, industrial computers, and set-top or smart TV systems that require large, high-bandwidth volatile memory at low power.
For design, memory controller settings must match the CL19 (approximate, speed-grade dependent) CAS latency and tRCD/tRP timings of the 2666 grade, and series termination plus VTT termination per DDR4 layout guidelines are essential for signal integrity at 2666 Mbps.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes beyond what a single datasheet offers.
Alternatives de remplacement direct pour H5AN4G8NBJR-VKC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN4G8NBJR-VKC (même facteur de forme et même empreinte) — différant par Package, Interface, Data Rate, Speed Grade, RoHS Status.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN4G8NBJR-UHI
✅ Remplacement direct✓ En stock
$2.25 / unité
Voir la fiche technique →H5AN4G8NBJR-UHC
✅ Remplacement direct✓ En stock
$3.18 / unité
Voir la fiche technique →H5AN4G8NBJR-RDC
✅ Remplacement direct✓ En stock
$2.95 / unité
Voir la fiche technique →H5AN4G8NBJR-PBC
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →H5AN4G8NAFR-TFC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN4G8NBJR-VKC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 4 Gb |
| Memory Organization | 512M x8 |
| Débit de données | 2666 Mbps (DDR4-2666) |
| Memory Interface | Parallel |
| Supply Voltage (VDD) | 1.2 V |
| Boîtier | FBGA-78 (7.5 x 11 mm) |
| Type de montage | Surface Mount |
| Technology | CMOS DRAM |
| Volatile / Non-Volatile | Volatile |
| Statut RoHS | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | Tray |
| Statut du cycle de vie | Active |
Guide de configuration des broches du H5AN4G8NBJR-VKC fbga-78 (7.5 x 11 mm)
Configuration des broches du H5AN4G8NBJR-VKC (boîtier fbga-78 (7.5 x 11 mm)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN4G8NBJR-VKC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN4G8NBJR-VKC convient pour 6 applications: PC Main Memory Modules (UDIMM/SODIMM), Embedded x86/ARM Computing Platforms, Networking and Communication Equipment, Smart TV and Set-Top Box Systems, Industrial Computers and Human-Machine Interfaces, Gaming Consoles and Graphics-Adjacent Buffers.
PC Main Memory Modules (UDIMM/SODIMM)
The H5AN4G8NBJR-VKC is a mainstream choice for desktop and notebook memory modules. With 4Gb density in a x8 organization, eight chips populate a 4GB non-ECC UDIMM, while sixteen chips build ECC server-class configurations. Its 2666 Mbps data rate and 1.2 V operation align with Intel and AMD DDR4 platforms of the corresponding generation, providing roughly 21 GB/s theoretical peak bandwidth per 64-bit channel. On module designs, the fly-by command/address topology and on-die termination supported by this DDR4 generation simplify routing compared with DDR3 T-topologies. Designers should match speed grade (CL and tRCD/tRP timings from the SK hynix series datasheet) with the SPD programming so host BIOS memory training runs correctly.
Recommandé
Embedded x86/ARM Computing Platforms
Industrial PCs, gateways, and edge-compute boards based on Intel Atom, AMD Embedded, or high-end ARM SoCs frequently specify 4Gb DDR4 x8 DRAM. The H5AN4G8NBJR-VKC's 2666 Mbps grade supports the memory clock options these SoCs expose, and its 1.2 V rail integrates cleanly with common PMIC DDR4 rails including the 2.5 V VPP wordline supply. In soldered-down embedded designs, the 78-ball FBGA (7.5 x 11 mm) footprint supports down-to-2.4 mm module-height constraints common in fanless enclosures. Memory controller training must program CAS latency and ODT settings to the VKC grade's datasheet timing table, and layout should follow byte-lane length matching within the SoC vendor's skew budget for stable operation at speed.
Recommandé
Networking and Communication Equipment
Enterprise switches, routers, and line cards use DDR4 SDRAM for packet buffers, route tables, and control-plane memory. The H5AN4G8NBJR-VKC provides 4Gb per chip with 2666 Mbps bandwidth, letting designers scale buffering with a modest chip count while keeping power low at 1.2 V - important in airflow-constrained switch chassis. The x8 organization balances data-bus width against chip count for 64-bit or 72-bit ECC-wide interfaces. Network processors and merchant silicon commonly include validated DDR4 support lists; confirm the SK hynix BJR family appears there. Thermal design should account for continuous full-bandwidth traffic, keeping junction temperature within the -C commercial grade rating via board-level airflow over the FBGA-78 package.
Recommandé
Smart TV and Set-Top Box Systems
4K smart TVs and IPTV set-top boxes require 2-4 GB of DDR4 for video frame buffers, graphics surfaces, and the Linux application stack. The H5AN4G8NBJR-VKC's 4Gb x8 configuration lets two to eight chips cover these densities, and its 2666 Mbps grade matches the memory interfaces of mainstream TV SoCs from MediaTek, Amlogic, and Novatek. The 1.2 V operation reduces standby power, supporting ENERGY STAR-class idle targets, while the compact FBGA-78 package fits the thin PCB stacks used in panel-integrated boards. Designers must ensure the SoC's DDR4 support list includes the SK hynix BJR die revision and program boot-time training parameters per the series datasheet timing tables for reliable cold-boot at 2666 Mbps.
Recommandé
Industrial Computers and Human-Machine Interfaces
Panel PCs, CNC controllers, and vision-system HMI hardware use DDR4 for Windows- and Linux-class operating systems. The H5AN4G8NBJR-VKC's 4Gb density supports 4-8 GB soldered configurations typical of these platforms, and its 2666 Mbps rate satisfies the memory bandwidth needs of multi-display graphics stacks. In factory environments, board-level reliability comes from solid VTT termination design and conformal-coating-compatible layout rather than component grading - so verify the -C commercial temperature suffix against your cabinet ambient profile, or select the -I industrial grade variants in the same H5AN4G8NBJR family when -40 C to +85 C operation is required. Lead-free, halogen-free construction aids industrial RoHS compliance programs.
Recommandé
Gaming Consoles and Graphics-Adjacent Buffers
Cost-sensitive game consoles, arcade boards, and GPU frame-buffer subsystems often pair a discrete DDR4 bank with the graphics chipset. The H5AN4G8NBJR-VKC supplies 4Gb per device at 2666 Mbps, and multiple chips can be ganged into 64-bit or wider buses for several GB/s of aggregate bandwidth. Its 1.2 V operation keeps thermal output manageable inside sealed consumer enclosures, and the standardized DDR4 interface lets firmware reuse memory-training code across SK hynix and Micron second sources. At sustained gaming loads the FBGA-78 package relies on PCB copper planes for heat spreading; designers should budget junction temperature using the series datasheet thermal data and validate under worst-case title power profiles.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN4G8NBJR-VKC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN4G8NBJR-UHI | H5AN4G8NBJR-UHC | H5AN4G8NBJR-RDC | H5AN4G8NBJR-PBC | H5AN4G8NAFR-TFC |
|---|---|---|---|---|---|---|
| Package | FBGA-78 (7.5 x 11 mm) | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Memory Organization | 512M x8 | 512M x8 | 512M x8 | 512M x8 | 512M x8 | 512M x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS / Halogen-Free | Compliant | Compliant (series datasheet) | Compliant (series datasheet) | Compliant (series datasheet) | Compliant (series datasheet) | Compliant (series datasheet) |
Principaux différenciateurs
- Highest speed grade in the NBJR family listed here (vs H5AN4G8NBJR-PBC)
- Newer B-die revision vs A-die predecessor (vs H5AN4G8NAFR-TFC)
- Broad suffix-family second sourcing within one footprint (vs H5AN4G8NBJR-UHC)
Notes de conception
At 2666 Mbps, DDR4 signal integrity is dominated by fly-by command/address termination and byte-lane skew. Route CA[5:0], CS, CKE, and clock in fly-by topology to each FBGA-78 device with on-die termination (ODT) enabled per the controller training algorithm. Length-match DQ/DQS groups per byte lane within the SoC vendor's tolerance (commonly +/-25 mils intra-byte) and maintain 40-ohm controlled impedance on data lines. Reference all high-speed traces to a continuous ground plane; avoid crossing plane splits under the memory bus.
The H5AN4G8NBJR-VKC requires three rails per DDR4 architecture: VDD 1.2 V core, VDDQ 1.2 V I/O, and VPP 2.5 V wordline boost. Budget a separate VTT termination regulator (e.g., sink-source LDO) for command/address and data termination, sized for peak termination current during bus turnarounds. Estimated: a 4-chip x8 32-bit-wide design at 2666 Mbps draws roughly 0.5-1.5 A per rail depending on traffic - derive from the series datasheet IDD tables for your usage pattern, not from this estimate. Place bulk 47-100 uF plus per-ball 0.1 uF decoupling close to each VDD/VDDQ ball group.
Speed-grade suffix mismatch is the most common DDR4 substitution failure: swapping a -VKC (2666) for a lower grade (e.g., -PBC) without re-programming controller CAS latency, tRCD/tRP, and refresh settings causes boot failures or intermittent memory errors. Always update SPD data and memory-training firmware when qualifying any suffix variant. Additionally, DRAM is volatile and ESD-sensitive: handle trays per JEDEC moisture/ESD handling guidance, and confirm the -C commercial temperature suffix matches your ambient specification before industrial deployment.
Informations de conformité
Series datasheet (H5AN4GxNBJR) describes family as Lead-Free & Halogen-Free. JLCPCB listing confirms RoHS for FBGA-78 DDR SDRAM. REACH and conflict-minerals status not stated in provided data.
