H5AN4G6NBJR-UHC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK Hynix
Référence : H5AN4G6NBJR-UHC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $9.74 | $9,74 |
| 10 | $9.35 | $93,50 |
| 100 | $8.92 | $892,00 |
| 500 | $8.5 | $4 250,00 |
| 1 000 | $8.09 | $8 090,00 |
H5AN4G6NBJR-UHC Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. A DDR4 DRAM transfers data on both rising and falling edges of the clock, and all operations are fully synchronous to that clock, allowing the memory controller to pipeline row activation, column read/write, and precharge commands. In the system hierarchy, a DRAM like this sits as main-system memory below CPU caches and is a core building block of any power-management and memory-subsystem design.
Key features include the wide industrial temperature range of -40C to +95C, automatic self-refresh, a data mask (DM) function for byte-wise write masking, an asynchronous reset (RESET_n) input, dynamic on-die termination (ODT), ZQ calibration for output driver impedance, write leveling for fly-by topology routing, and CRC support for command/address integrity. These functions simplify high-speed board design and improve signal integrity on multi-drop DDR4 buses.
Technically, the device uses CMOS technology with internal bank groups that allow fast back-to-back access between group and within group, and on-die termination reduces external termination components. The 1.2V-class core supply (1.14V-1.26V) lowers dynamic power compared with DDR3's 1.5V rails, which reduces total system thermal load at equivalent bandwidth.
Typical applications include industrial controllers, computing modules, embedded logging and data acquisition systems, networking equipment, and replacement sourcing for DDR4-based main-memory designs where 4Gb x16 density and industrial temperature rating are required.
For design, ensure the memory controller supports DDR4 training (write leveling, read/write leveling, ZQ calibration) and provide a clean 1.2V rail with adequate decoupling at each VDD ball group.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour H5AN4G6NBJR-UHC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN4G6NBJR-UHC (même facteur de forme et même empreinte) — différant par Package, Interface, Organization, Supply Voltage (VDD), Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN4G6NBJR-UHI
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN4G6NBJR-PBC
✅ Remplacement direct✓ En stock
$6.6 / unité
Voir la fiche technique →H5AN4G6NBJR-RDC
✅ Remplacement direct✓ En stock
$6.15 / unité
Voir la fiche technique →H5AN4G8NBJR-UHC
✅ Remplacement direct✓ En stock
$3.18 / unité
Voir la fiche technique →K4A4G165WD-BCTD
✅ Remplacement direct✓ En stock
$19 / unité
Voir la fiche technique →MT40A256M16GE-083E
✅ Remplacement direct✓ En stock
$2.2 / unité
Voir la fiche technique →H5AN4G6NBJR-UHC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Clock Frequency | 1.6 GHz |
| Supply Voltage (VDD) | 1.14 V to 1.26 V |
| Technology | CMOS |
| Température de fonctionnement | -40C to +95C |
| Boîtier | FBGA-96 (PBGA-96) |
| Type de montage | Surface Mount |
| Self Refresh | Auto self-refresh |
| Data Mask Function | Yes (DM) |
| Asynchronous Reset | Yes (RESET_n) |
| On-Die Termination | Dynamic ODT |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes (command/address CRC) |
| Statut RoHS | Compliant |
Guide de configuration des broches du H5AN4G6NBJR-UHC fbga-96 (pbga-96)
Configuration des broches du H5AN4G6NBJR-UHC (boîtier fbga-96 (pbga-96)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN4G6NBJR-UHC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN4G6NBJR-UHC convient pour 6 applications: Industrial Controllers and PLCs, Embedded Computing Modules, Data Logging and Edge Storage Buffers, Networking and Communication Equipment, Automotive-Adjacent and Telematics Systems, Test and Measurement Instrumentation.
Industrial Controllers and PLCs
The H5AN4G6NBJR-UHC fits industrial controller and PLC main-memory designs because its -40C to +95C operating range covers unconditioned cabinets and outdoor enclosures where commercial-grade 0C to +85C memory would fail. Its 4Gb (256M x16) density provides ample working memory for control logic, protocol stacks, and data buffers at 1.6 GHz-class bandwidth. Features like auto self-refresh, dynamic ODT, ZQ calibration, and command/address CRC keep the DDR4 interface reliable in electrically noisy factory environments. Placed on a short fly-by bus with write leveling enabled and a regulated 1.14V-1.26V rail, the device delivers deterministic latency for real-time control loops without external termination components, reducing PCB cost.
Recommandé
Embedded Computing Modules
Embedded computing modules (COMs, SOMs, SBCs) use the H5AN4G6NBJR-UHC as main system DRAM because the 256M x16 organization lets designers build 32-bit buses with just two devices, minimizing layer count and BGA routing complexity. The 1.14V-1.26V core supply keeps total module power low compared with DDR3L, improving thermal margins in fanless enclosures. Write leveling and read/write training support standard fly-by DDR4 topologies used with application processors from NXP, TI, and Rockchip. With -40C to +95C rating, the same module SKU can serve both commercial and industrial end markets, simplifying product qualification and inventory for module vendors.
Recommandé
Data Logging and Edge Storage Buffers
In industrial data loggers and edge-analytics gateways, the H5AN4G6NBJR-UHC serves as a high-bandwidth write buffer that stages sensor data before it is committed to NAND flash or pushed upstream. The 1.6 GHz-class interface absorbs burst data from multi-channel ADCs or camera streams, while auto self-refresh preserves buffer contents during low-power sampling intervals. The asynchronous RESET_n pin allows a supervisory controller to recover the memory deterministically after a system fault without power cycling, and the data mask (DM) function lets firmware update records in place without read-modify-write cycles. Its industrial temperature rating supports loggers mounted on motors, vehicles, and outdoor assets.
Recommandé
Networking and Communication Equipment
Packet buffers, deep-packet inspection tables, and routing tables in switches, routers, and industrial Ethernet equipment are natural fits for the H5AN4G6NBJR-UHC. The 256M x16 organization provides 4Gb of working memory per device, and the command/address CRC function protects control integrity on multi-drop buses common in networking backplanes. Dynamic ODT and ZQ calibration maintain signal integrity at 1.6 GHz-class data rates across backplane trace variations. Multiple devices can share a fly-by address/command bus with per-device chip select, letting designers scale from 512MB to multi-GB buffering on one footprint, with the industrial temperature range covering hardened outdoor network hardware.
Recommandé
Automotive-Adjacent and Telematics Systems
Telematics units, fleet recorders, and off-highway vehicle electronics that do not require AEC-Q100 qualification but operate in vehicular environments benefit from the H5AN4G6NBJR-UHC's -40C to +95C range and robust feature set. The 4Gb density supports map caching, video ring buffers from surround-view cameras, and OTA update staging. The asynchronous reset and self-refresh features support sleep/wake power strategies, allowing the DRAM to retain state while the host processor sleeps. Designers should validate vibration-driven solder-joint reliability for the FBGA-96 package under their mechanical profile and consider conformal coating for condensing environments.
Recommandé
Test and Measurement Instrumentation
Bench instruments, data acquisition systems, and protocol analyzers use the H5AN4G6NBJR-UHC as acquisition memory where its 1.6 GHz-class interface supports sustained streaming from high-speed ADCs into a 4Gb capture buffer. The 256M x16 bus organization pairs cleanly with 16-bit ADC pipelines, and the DM/data-mask path supports pre/post-trigger record management. Because instruments operate in air-conditioned labs, the industrial temperature rating provides extra margin against internal self-heating at high sample rates. ZQ calibration keeps output impedance matched across long probe-path PCB routing, and the FBGA-96 footprint allows buffer-size scaling by populating one or two devices on the same board.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN4G6NBJR-UHC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN4G6NBJR-UHI | H5AN4G8NBJR-UHC | K4A4G165WD-BCTD | MT40A256M16GE-083E |
|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 512M x 8 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.2 V class | 1.2 V class |
| Key Features | Auto self-refresh, DM, async reset, dynamic ODT, ZQ cal, write leveling, CRC | Same feature set (same die family) | Same feature set, x8 organization | JEDEC DDR4 standard feature set | JEDEC DDR4 standard feature set |
Principaux différenciateurs
- Industrial temperature range (vs MT40A256M16GE-083E)
- 16-bit organization halves bus device count (vs H5AN4G8NBJR-UHC)
- CRC-protected command/address bus (vs K4A4G165WD-BCTD)
Notes de conception
Power the H5AN4G6NBJR-UHC from a dedicated 1.2V-class rail held within 1.14V-1.26V (per JLCPCB verified listing). DDR4 devices also require separate VPP (2.5V) and VDDQ domains on many controllers - check your processor's power tree. Provide bulk capacitance (e.g. 2x 100uF) plus distributed 0.1uF ceramics near each VDD/VDDQ ball group of the FBGA-96 package. Estimated: at 1.6 GHz-class operation a 4Gb DDR4 can draw several hundred milliamps on VDDQ, so size the regulator for transient steps rather than average current.
Use the standard DDR4 fly-by address/command topology and enable write leveling, ZQ calibration, and read/write training in the memory controller configuration for this device. Keep DQS/DQ trace length matching within the controller vendor's skew budget (typically a few mils per unit interval at DDR4-3200-class rates). The command/address CRC feature supported by this part should be enabled in noise-heavy environments such as motor drives, as it detects control-line corruption that would otherwise cause silent data corruption.
The -UH suffix denotes a specific speed/temperature bin; do not assume a different suffix (e.g. PBC or RDC) meets your data-rate requirement without checking the SK Hynix H5AN4GxNBJR series datasheet speed-bin tables. Also verify your controller's DDR4 training supports the -40C to +95C range, since ZQ calibration output drifts over temperature and periodic recalibration may be required at the extremes. Finally, FBGA-96 parts cannot be inspected by eye after reflow - insist on X-ray or electrical test when sourcing from brokers.
Informations de conformité
RoHS compliance stated in JLCPCB verified listing for H5AN4G6NBJR-UHC. REACH, halogen-free, and conflict-minerals status not stated in provided data.
