H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix
Référence : H5AN8G8NCJR-UHC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.95 | $3,95 |
| 10 | $3.62 | $36,20 |
| 100 | $3.35 | $335,00 |
| 500 | $3.1 | $1 550,00 |
| 1 000 | $2.88 | $2 880,00 |
H5AN8G8NCJR-UHC Présentation
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous DRAM) is a class of volatile memory IC that transfers data on both rising and falling edges of a differential clock, synchronizing all operations to the clock. Within the memory hierarchy, DDR4 SDRAM sits below DDR5 and above DDR3, offering higher density, lower operating voltage (1.2V vs 1.5V for DDR3), and improved bandwidth. It remains the dominant main-memory standard for servers, PCs, and embedded computing modules.
Key features of the H5AN8G8NCJR-UHC include 8Gb density in a single x8 organization (1G x 8), DDR4-2400 speed grade (the UHC bin supports 2400 MT/s at CL17), fully synchronous operation referenced to both clock edges, and bank-group architecture for improved random-access efficiency. The part is lead-free and halogen-free per SK hynix documentation, and RoHS code Yes is listed by distributor records.
Technically, the H5AN8G8NCJR family uses SK hynix CMOS DDR4 process technology with internal bank groups that allow faster column-to-column access in different bank groups. The 8-bit data width per device simplifies 64-bit and 72-bit (ECC) memory bus designs using 8 or 9 devices per rank. Termination is handled on-DIMM/on-board per DDR4 JEDEC-style signaling, reducing signal integrity complexity versus DDR3.
Typical applications include desktop and laptop DIMM modules, server RDIMM/LRDIMM components, embedded computing modules, industrial controllers, networking equipment main memory, and consumer electronics requiring high-bandwidth memory. The CJR die revision (CJR/UHC bin) is also popular in overclocked consumer memory kits, with documented stable operation above 3000 MT/s in enthusiast systems.
When designing with this device, ensure proper address/command/command-clock termination per DDR4 routing guidelines and verify the memory controller supports the 2400 MT/s CL17 timing bin and 1.2V operating point.
This page synthesizes distributor pricing, same-footprint drop-in alternatives, and procurement data not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour H5AN8G8NCJR-UHC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G8NCJR-UHC (même facteur de forme et même empreinte) — différant par Package, Interface, Data Rate, Organization, Memory Size.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NDJR-UHC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5AN8G8NCJR-RDC
✅ Remplacement direct✓ En stock
$2.7 / unité
Voir la fiche technique →H5AN8G8NCJR-PBC
✅ Remplacement direct✓ En stock
$2.4 / unité
Voir la fiche technique →H5AN8G8NCJR-VKC
✅ Remplacement direct✓ En stock
$28.13 / unité
Voir la fiche technique →MT40A1G8AG-062E
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →K4A8G085WB-BCWE
✅ Remplacement direct✓ En stock
$12.3047 / unité
Voir la fiche technique →H5AN8G8NCJR-UHC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | 1.2 V |
| Boîtier | FBGA-78 |
| Type de montage | Surface Mount (BGA) |
| RoHS Code | Yes |
| REACH Compliance | Yes (per distributor record) |
| Lead-Free | Yes (family documented as Lead-Free & Halogen-Free) |
| Sans halogène | Yes |
| Part Life Cycle Code | Active |
| Access Type | Synchronous, both clock edges (DDR) |
| Memory Configuration | Bank-group architecture DDR4 |
| Die Revision | CJR (C-die family) |
| Manufacturer | SK hynix Inc. |
Guide de configuration des broches du H5AN8G8NCJR-UHC fbga-78
Configuration des broches du H5AN8G8NCJR-UHC (boîtier fbga-78). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN8G8NCJR-UHC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN8G8NCJR-UHC convient pour 6 applications: PC and Workstation DIMM Main Memory, Server and Data Center RDIMM Components, Embedded Computing Modules and COMs, Networking and Telecom Equipment, Industrial Controllers and Automation, Consumer Electronics and Gaming/Overclocking Memory Kits.
PC and Workstation DIMM Main Memory
The H5AN8G8NCJR-UHC is a primary building block for desktop UDIMMs and workstation memory modules. Its 1G x 8 organization lets designers build a 64-bit bus with 8 devices per rank (8 GB capacity), delivering DDR4-2400 bandwidth of about 19.2 GB/s per 64-bit channel. The CJR die is widely used in retail consumer modules and is documented running stable above 3000 MT/s in enthusiast platforms, giving module makers validated headroom. Device-level FBGA-78 footprinting matches standard DDR4 DIMM land patterns, so BOM substitution between NCJR speed grades requires no PCB change; only SPD timing data must be programmed to match the selected bin.
Recommandé
Server and Data Center RDIMM Components
In server memory subsystems, the 8Gb x8 DDR4 device is the workhorse component for RDIMM and LRDIMM assembly, where registered buffering and ECC use x8 devices in 72-bit configurations (nine devices per rank including check bits). The H5AN8G8NCJR-UHC's 1.2V operation lowers total memory subsystem power versus DDR3, an important metric at hundreds of DIMM slots per rack. Its DDR4-2400 rating matches mainstream Xeon and EPYC memory controllers, and bank-group architecture sustains high random-access efficiency under virtualized workloads. Procurement teams commonly cross-qualify Micron MT40A1G8AG-062E and Samsung K4A8G085WB parts for supply-chain resilience on the same footprint.
Recommandé
Embedded Computing Modules and COMs
Computer-on-Modules and embedded SBCs frequently mount discrete DDR4 DRAM components directly on the module to save height and cost versus SO-DIMM sockets. The H5AN8G8NCJR-UHC's FBGA-78 package supports compact 4-chip (4 GB, 32-bit) or 8-chip (8 GB, 64-bit) down configurations typical of COM Express and SMARC designs. Its DDR4-2400 bin aligns with validated memory settings of industrial SoC reference designs, and RoHS/lead-free/halogen-free compliance satisfies industrial environmental requirements. Designers should implement address/command termination and length-matched fly-by routing per DDR4 guidelines and reserve controller flexibility for retraining when substituting die revisions.
Recommandé
Networking and Telecom Equipment
Routers, switches, and network appliances use 8Gb x8 DDR4 devices for packet buffering, table lookups, and control-plane memory. The H5AN8G8NCJR-UHC provides 19.2 GB/s of bandwidth per 64-bit bus at DDR4-2400, sufficient for line-rate forwarding engines when combined with hardware queue management. The 1.2V core reduces thermal load in convection-cooled telecom chassis, and the FBGA-78 package's standard footprint simplifies multi-vendor BOM strategies - procurement teams commonly qualify SK hynix, Micron MT40A1G8AG-062E, and Samsung K4A8G085WB parts side by side. Thermal validation should confirm junction limits at worst-case sustained buffer traffic and elevated ambient temperatures.
Recommandé
Industrial Controllers and Automation
Industrial PCs, motion controllers, and vision systems require high-bandwidth volatile memory for frame buffers and real-time data logging. The H5AN8G8NCJR-UHC's 8Gb density supports multi-camera image buffering in machine-vision controllers, while DDR4-2400 timings are conservative and compatible with industrial-grade memory controllers that prioritize stability over peak speed. The part's Active lifecycle status and multi-die-family availability (CJR/AFR/B) mitigate long-term supply risk for 10+ year industrial service commitments. Conformal-coated assemblies should note the FBGA balls and solder-joint inspection requirements; X-ray or AXI inspection is recommended for hidden-ball solder verification in high-vibration environments.
Recommandé
Consumer Electronics and Gaming/Overclocking Memory Kits
The CJR-die H5AN8G8NCJR-UHC is a well-documented component in consumer performance memory kits, with enthusiast communities reporting stable operation at 3000-3400 MT/s with adjusted voltage around 1.35-1.40V and timings such as 15-17-17-36 at 3000 MT/s. This makes it a favored die for gaming desktops and enthusiast builds where overclocking headroom matters. Beyond overclocking, set-top boxes, smart TVs, and gaming consoles in DDR4-2400 platforms use the same device at its guaranteed JEDEC bin. Designers targeting guaranteed operation should stay within the 2400 MT/s CL17 specification at 1.2V; overclocked profiles must be validated per platform and are outside the manufacturer warranty.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G8NCJR-UHC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NDJR-UHC | H5AN8G8NCJR-VKC | MT40A1G8AG-062E | K4A8G085WB-BCWE |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2400 (UHC) | DDR4-2400 (UHC) | DDR4-2666 (VKC) | DDR4-2666 (062E) | DDR4-2666 (BCWE) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- CJR die with documented overclocking headroom (vs H5AN8G8NDJR-UHC)
- Multi-die-family supply resilience within SK hynix (vs H5AN8G8NCJR-VKC)
- Cost advantage at guaranteed 2400 MT/s bin (vs MT40A1G8AG-062E)
Notes de conception
DDR4 fly-by routing requires length-matched address/command traces per byte lane group with on-die termination (ODT) configured per the memory controller's training algorithm. For multi-rank designs, follow the controller vendor's DDR4 routing guidelines for trace impedance (40 ohm typical for address/command) and reference-plane continuity under the FBGA-78 ball field. Proper VREF training is essential when substituting die revisions (CJR to DJR), as receiver offset calibration differs slightly between dies.
Plan separate power domains for 1.2V VDD and 2.5V VPP per DDR4 standard practice. Estimated: an 8-chip (8 GB) 64-bit bus at DDR4-2400 draws roughly 2-4 W depending on access intensity; size the VDD rail regulator with at least 50% margin and add bulk capacitance near each DRAM cluster. Verify VRM transient response meets controller soak/sleep state transitions, where current can step by more than 50% in microseconds.
Do not assume drop-in substitution is free: although all listed alternatives share the FBGA-78 footprint class, cross-brand and cross-die swaps require DRAM retraining and, on module-level products, re-programmed SPD data matching the substituted part's speed bin and timings. The UHC bin guarantees only DDR4-2400; designing a platform above this rate with a UHC-suffix part relies on unguaranteed headroom. For production, always match or exceed the original speed bin and update validation test coverage accordingly.
Informations de conformité
Distributor record lists RoHS Code: Yes, REACH compliance indicated, Part Life Cycle Code Active. SK hynix family documentation marks the NCJR-xxC series Lead-Free & Halogen-Free. Conflict minerals status not stated in provided data.