H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix
Référence : H5AN8G8NCJR-RDC ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.55 | $35,50 |
| 100 | $3.2 | $320,00 |
| 500 | $2.95 | $1 475,00 |
| 1 000 | $2.7 | $2 700,00 |
H5AN8G8NCJR-RDC Présentation
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and high-end computing platforms. Within the memory hierarchy, DDR4 sits between the CPU cache and storage, providing the large density and high bandwidth that modern processors demand. DDR4 improved on DDR3 by lowering operating voltage from 1.5V to 1.2V, doubling bank groups to eight, and raising maximum data rates, which reduces system power while increasing effective bandwidth.
The H5AN8G8NCJR family offers fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the rising edge of CK. Key features include 8Gb density in a single die, x8 organization, on-die termination (ODT), data mask (DM) support, and JEDEC-standard DDR4 command set. The -RDC suffix denotes the 2666 Mbps speed grade with a commercial operating temperature range.
Architecturally, the device uses internal bank groups to allow interleave-friendly access patterns, and a PLL-free design with DLL for output timing alignment. Burst lengths of 8 (BL8) with sequential and interleave options, plus programmable CAS latency, let memory controllers optimize latency versus throughput. The 78-ball FBGA surface-mount package minimizes parasitic inductance, supporting high-speed signal integrity on fly-by-terminated DDR4 channels.
Typical applications include server DIMMs and memory-down designs, workstations, industrial computing, networking equipment, and embedded systems requiring large memory density with high bandwidth. The x8 organization suits ECC-based server designs using x8-based chipkill implementations.
Design consideration: DDR4 fly-by routing requires length-matched traces, VTT termination, and careful controller training; always validate the speed-grade suffix (-RDC versus -XNC or -VKC) against your controller's supported data rate.
This page synthesizes distributor availability, drop-in alternatives within the SK Hynix 8Gb DDR4 family, and JEDEC-compatible cross-brand equivalents, plus practical design notes not found in the raw datasheet.
Alternatives de remplacement direct pour H5AN8G8NCJR-RDC — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G8NCJR-RDC (même facteur de forme et même empreinte) — différant par Package, Data Rate, Interface, Organization, Memory Size.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NCJR-PBC
✅ Remplacement direct✓ En stock
$2.4 / unité
Voir la fiche technique →H5AN8G8NCJR-XNC
✅ Remplacement direct✓ En stock
$30.6923 / unité
Voir la fiche technique →H5AN8G8NCJR-VKC
✅ Remplacement direct✓ En stock
$28.13 / unité
Voir la fiche technique →H5AN8G8NDJR-XNC
✅ Remplacement direct✓ En stock
$24.5 / unité
Voir la fiche technique →H5AN8G8NMJR-XNC
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4A8G085WC-BCRC
✅ Remplacement direct✓ En stock
$4.3 / unité
Voir la fiche technique →MT40A1G8AG-062E
✅ Remplacement direct✓ En stock
$3.1 / unité
Voir la fiche technique →H5AN8G8NCJR-RDC Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb (1 GB) |
| Organisation de la mémoire | x8 |
| Débit de données | up to 2666 Mbps |
| Tension d'alimentation | 1.2 V (VDD) |
| Interface | DDR4 (JEDEC standard) |
| Bank Architecture | 4 bank groups x 4 banks |
| Burst Length | BL8 |
| Boîtier | 78-ball FBGA |
| Type de montage | Surface Mount |
| Generation | C-die family (NCJR) |
| Lead Free | Yes |
| Sans halogène | Yes |
| Statut RoHS | Compliant |
Guide de configuration des broches du H5AN8G8NCJR-RDC 78-ball fbga
Configuration des broches du H5AN8G8NCJR-RDC (boîtier 78-ball fbga). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5AN8G8NCJR-RDC.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5AN8G8NCJR-RDC convient pour 6 applications: Server Main Memory (RDIMM / Memory-Down), Workstation and High-End Desktop Memory, Networking and Telecom Equipment, Industrial Computing and Embedded Systems, Test and Measurement Instrumentation, Automotive and Transportation Infotainment.
Server Main Memory (RDIMM / Memory-Down)
The H5AN8G8NCJR-RDC fits server main-memory designs where the x8 organization enables x8-based SDDC (single-device data correction) under ECC, a chipkill-class reliability feature required in enterprise platforms. Its 2666 Mbps data rate and 1.2V operation deliver high bandwidth with reduced power versus DDR3, and the 78-ball FBGA package is the industry-standard component form for RDIMM/LRDIMM assembly and memory-down server boards. Placed on a fly-by-terminated DDR4 channel with registered clocking, the device sustains full-rate operation at 1333 MHz CK, giving roughly 21 GB/s per device peak bandwidth. Validation should include controller training at the -R timing table to guarantee margin across the commercial temperature range.
Recommandé
Workstation and High-End Desktop Memory
Workstation platforms benefit from the 8Gb density per device of the H5AN8G8NCJR-RDC, allowing multi-GB DIMM configurations with fewer chips per module. The 2666 Mbps grade matches mainstream desktop and workstation memory clocks, and the 1.2V rail reduces module thermal load compared with DDR3-class parts, simplifying heatsink decisions on buffered and unbuffered modules. In an ECC UDIMM design, the x8 organization supports single-bit error correction per device, improving uptime for CAD, simulation, and content-creation workloads. The device's BL8 burst and 4-bank-group architecture sustain sequential bandwidth for large dataset handling. Layout must respect DDR4 length matching and VTT termination to achieve eye margin at full data rate.
Recommandé
Networking and Telecom Equipment
Routers, switches, and telecom line cards use DDR4 as packet-buffer and control-plane memory. The H5AN8G8NCJR-RDC provides 8Gb density and 2666 Mbps bandwidth in a compact 78-ball FBGA, fitting memory-down layouts on dense line cards where module height is restricted. Its bank-group architecture sustains the mixed read/write patterns typical of packet buffering, while 1.2V operation lowers system power in always-on network equipment. The x8 bus width simplifies controller interfacing for network SoCs that expose 16/32/64-bit DDR4 channels. Designers should size trace lengths for multi-rank or multi-device fly-by topologies and retrain timing at production test to hold eye margin across the commercial temperature range.
Recommandé
Industrial Computing and Embedded Systems
Industrial PCs, machine-vision controllers, and edge-compute gateways need high-bandwidth volatile memory; the H5AN8G8NCJR-RDC supplies 8Gb density and 2666 Mbps throughput in a surface-mount FBGA that survives vibration better than socketed DIMMs. The 1.2V core keeps thermal budgets manageable in fanless enclosures, and its commercial temperature range suits controlled factory-floor environments (industrial-rated variants should be selected for extended range). The x8 organization integrates cleanly with industrial SoCs offering 32/64-bit DDR4 buses, and JEDEC-standard command timing enables multi-vendor second sourcing. Designers should implement proper power-rail sequencing and use controller training at boot to maintain data integrity despite temperature drift.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators rely on deep capture memory, and the H5AN8G8NCJR-RDC's 8Gb density supports long record lengths per instrument channel bank. Its 2666 Mbps rate provides sustained write bandwidth for real-time streaming acquisition architectures, while the 1.2V supply reduces internal heating in thermally sensitive measurement front ends. The 78-ball FBGA allows compact memory-down arrays around the acquisition FPGA, and the x8 bus enables flexible 16/32/64-bit channel scaling. Instruments typically run DDR4 at reduced clocks for timing margin; the -R grade still delivers full bandwidth headroom at standard 1333 MHz operation with conventional controller training and termination settings.
Recommandé
Automotive and Transportation Infotainment
Automotive IVI head units, digital clusters, and ADAS domain controllers demand high-bandwidth DRAM; the H5AN8G8NCJR-RDC's 8Gb density and 2666 Mbps rate support multi-camera sensor buffering and rich graphics stacks. Note that this -C (commercial temperature) grade is intended for platforms with cabin-grade thermal control; automotive-qualified memory variants should be selected for under-hood or extreme-temperature zones. The 78-ball FBGA supports memory-down placement on compact compute modules, and the x8 organization fits typical SoC 32-bit DDR4 buses. Designers must implement rail sequencing, signal-integrity simulation for the flex/cable interconnects common in vehicle deployments, and verify thermal derating of the data rate in hot in-cabin conditions.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G8NCJR-RDC — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NCJR-PBC | H5AN8G8NCJR-XNC | H5AN8G8NCJR-VKC | K4A8G085WC-BCRC | MT40A1G8AG-062E |
|---|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Samsung Electronics | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | x8 | x8 | x8 | x8 | x8 | x8 |
| Data Rate | up to 2666 Mbps | up to 2133 Mbps class | up to 3200 Mbps | 2666 Mbps class | 2666 Mbps class | 2666 Mbps class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
Principaux différenciateurs
- Balanced 2666 Mbps bandwidth at mainstream cost (vs H5AN8G8NCJR-XNC)
- JEDEC-standard cross-brand second sourcing (vs K4A8G085WC-BCRC)
- x8 organization enables server-class ECC (SDDC) (vs H5AN8G6NAFR-VKC)
Notes de conception
DDR4 fly-by routing is mandatory for multi-device topologies: route address/command to each 78-ball FBGA device in daisy-chain with on-die termination (ODT) absorbing reflections, while DQ/DQS pairs are point-to-point and must be length-matched within controller-recommended skew (typically a few mils per inch of trace, per JEDEC DDR4 design guidance). Maintain a solid reference plane under all DDR4 nets and keep VTT distribution as a low-inductance plane with decoupling near each termination load. Follow the SK Hynix DDR4 design guide and your controller vendor's layout checklist for exact constraints.
The device operates from 1.2V VDD plus VDDQ; use wide planes or pours rather than traces to keep rail impedance low during simultaneous switching of x8 DQ loads. Provide VPP (2.5V) per DDR4 requirements. Estimated: at full 2666 Mbps operation with 8 DQ pins active, per-device dynamic current is on the order of hundreds of milliamps; budget bulk and 100 nF ceramic decoupling per device and verify with rail transient simulation. Always sequence VDD/VDDQ before or together with VPP per controller vendor guidance.
Speed-grade suffixes are not interchangeable assumptions: the -RDC (2666 Mbps), -VKC, -PBC, and -XNC grades carry different AC timing tables. Substituting a slower grade into a design validated at 3200 Mbps will fail margin tests, and omitting controller retraining after a second-source swap (e.g., Samsung K4A8G085WC or Micron MT40A1G8AG) can cause boot failures even when the footprint is identical. Re-run memory training and margin validation (read/write eye, Vref offset sweep) for every die/speed combination in production.
Informations de conformité
Datasheet aggregator listing for H5AN8G8NCJR-XXC states Lead-Free & Halogen-Free construction. REACH and conflict-minerals status not stated in provided data.