SK hynix

H5AN8G8NCJR-UHC - 8Gb DDR4-2400 SDRAM FBGA-78 | SK hynix

MPN: H5AN8G8NCJR-UHC ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss FBGA-78 Package DDR4-2400 (PC4-19200) Speed DDR4 SDRAM Memory
From $2.88 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $3.95 $3.95
10 $3.62 $36.20
100 $3.35 $335.00
500 $3.1 $1,550.00
1,000 $2.88 $2,880.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN8G8NCJR-UHC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G8NDJR-UHC

✅ Drop-In
📦 FBGA-78
DJR die revision vs CJR; same 8Gb x8 DDR4-2400 bin, same 1.2V and footprint

📋 Reference alternative (not in catalog)

H5AN8G8NCJR-RDC

✅ Drop-In
SK hynix
📦 FBGA-78
DDR4 SDRAM · 8 Gb (1 GB) · x8 · up to 2666 Mbps · 1.2 V (VDD) · DDR4 (JEDEC standard) · 4 bank groups x 4 banks · BL8

✓ In Stock

$2.7 / Unit

View Datasheet →

H5AN8G8NCJR-PBC

✅ Drop-In
SK hynix
📦 FBGA-78
DDR4 SDRAM · 8 Gb (1 GB) · 1G x 8 (x8) · 1.2 V · 1.2 V (SSTL12) · [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] · 78-ball FBGA · Surface Mount

✓ In Stock

$2.4 / Unit

View Datasheet →

H5AN8G8NCJR-VKC

✅ Drop-In
SK hynix
📦 FBGA-78
DDR4 SDRAM (volatile) · 8 Gbit · 1G x 8 · 2666 Mbps/pin · 1.6 GHz · 1.14 V to 1.26 V (1.2 V class) · 30 mA · 3 mA

✓ In Stock

$28.13 / Unit

View Datasheet →

MT40A1G8AG-062E

✅ Drop-In
Micron Technology
📦 FBGA-78
DDR4 SDRAM · 8 Gbit · 1G x 8 · Parallel · 1.6 GHz (DDR4-3200, 3200 MT/s data rate) · 19 ns class (-062E speed grade) · 1.2 V · 78-FBGA (7.5 x 11 mm)

✓ In Stock

$3.1 / Unit

View Datasheet →

K4A8G085WB-BCWE

✅ Drop-In
Samsung Electronics
📦 FBGA-78
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 0C to +85C · 78-ball FBGA · Surface Mount

✓ In Stock

$4.28 / Unit

View Datasheet →

H5AN8G8NCJR-UHC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gb
Organization 1G x 8
Speed Grade DDR4-2400 (PC4-19200)
Supply Voltage (VDD) 1.2 V
Package FBGA-78
Mounting Type Surface Mount (BGA)
RoHS Code Yes
REACH Compliance Yes (per distributor record)
Lead-Free Yes (family documented as Lead-Free & Halogen-Free)
Halogen-Free Yes
Part Life Cycle Code Active
Access Type Synchronous, both clock edges (DDR)
Memory Configuration Bank-group architecture DDR4
Die Revision CJR (C-die family)
Manufacturer SK hynix Inc.

H5AN8G8NCJR-UHC fbga-78 Pin Configuration Guide

Complete pinout information for H5AN8G8NCJR-UHC (fbga-78 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-78 package pinout diagram for H5AN8G8NCJR-UHC

No detailed pinout data available for H5AN8G8NCJR-UHC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN8G8NCJR-UHC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G8NCJR-UHC is suitable for 6 applications: PC and Workstation DIMM Main Memory, Server and Data Center RDIMM Components, Embedded Computing Modules and COMs, Networking and Telecom Equipment, Industrial Controllers and Automation, Consumer Electronics and Gaming/Overclocking Memory Kits.

🖥️

PC and Workstation DIMM Main Memory

The H5AN8G8NCJR-UHC is a primary building block for desktop UDIMMs and workstation memory modules. Its 1G x 8 organization lets designers build a 64-bit bus with 8 devices per rank (8 GB capacity), delivering DDR4-2400 bandwidth of about 19.2 GB/s per 64-bit channel. The CJR die is widely used in retail consumer modules and is documented running stable above 3000 MT/s in enthusiast platforms, giving module makers validated headroom. Device-level FBGA-78 footprinting matches standard DDR4 DIMM land patterns, so BOM substitution between NCJR speed grades requires no PCB change; only SPD timing data must be programmed to match the selected bin.

🖥️

Server and Data Center RDIMM Components

In server memory subsystems, the 8Gb x8 DDR4 device is the workhorse component for RDIMM and LRDIMM assembly, where registered buffering and ECC use x8 devices in 72-bit configurations (nine devices per rank including check bits). The H5AN8G8NCJR-UHC's 1.2V operation lowers total memory subsystem power versus DDR3, an important metric at hundreds of DIMM slots per rack. Its DDR4-2400 rating matches mainstream Xeon and EPYC memory controllers, and bank-group architecture sustains high random-access efficiency under virtualized workloads. Procurement teams commonly cross-qualify Micron MT40A1G8AG-062E and Samsung K4A8G085WB parts for supply-chain resilience on the same footprint.

🏭

Embedded Computing Modules and COMs

Computer-on-Modules and embedded SBCs frequently mount discrete DDR4 DRAM components directly on the module to save height and cost versus SO-DIMM sockets. The H5AN8G8NCJR-UHC's FBGA-78 package supports compact 4-chip (4 GB, 32-bit) or 8-chip (8 GB, 64-bit) down configurations typical of COM Express and SMARC designs. Its DDR4-2400 bin aligns with validated memory settings of industrial SoC reference designs, and RoHS/lead-free/halogen-free compliance satisfies industrial environmental requirements. Designers should implement address/command termination and length-matched fly-by routing per DDR4 guidelines and reserve controller flexibility for retraining when substituting die revisions.

🌐

Networking and Telecom Equipment

Routers, switches, and network appliances use 8Gb x8 DDR4 devices for packet buffering, table lookups, and control-plane memory. The H5AN8G8NCJR-UHC provides 19.2 GB/s of bandwidth per 64-bit bus at DDR4-2400, sufficient for line-rate forwarding engines when combined with hardware queue management. The 1.2V core reduces thermal load in convection-cooled telecom chassis, and the FBGA-78 package's standard footprint simplifies multi-vendor BOM strategies - procurement teams commonly qualify SK hynix, Micron MT40A1G8AG-062E, and Samsung K4A8G085WB parts side by side. Thermal validation should confirm junction limits at worst-case sustained buffer traffic and elevated ambient temperatures.

🏭

Industrial Controllers and Automation

Industrial PCs, motion controllers, and vision systems require high-bandwidth volatile memory for frame buffers and real-time data logging. The H5AN8G8NCJR-UHC's 8Gb density supports multi-camera image buffering in machine-vision controllers, while DDR4-2400 timings are conservative and compatible with industrial-grade memory controllers that prioritize stability over peak speed. The part's Active lifecycle status and multi-die-family availability (CJR/AFR/B) mitigate long-term supply risk for 10+ year industrial service commitments. Conformal-coated assemblies should note the FBGA balls and solder-joint inspection requirements; X-ray or AXI inspection is recommended for hidden-ball solder verification in high-vibration environments.

🎮

Consumer Electronics and Gaming/Overclocking Memory Kits

The CJR-die H5AN8G8NCJR-UHC is a well-documented component in consumer performance memory kits, with enthusiast communities reporting stable operation at 3000-3400 MT/s with adjusted voltage around 1.35-1.40V and timings such as 15-17-17-36 at 3000 MT/s. This makes it a favored die for gaming desktops and enthusiast builds where overclocking headroom matters. Beyond overclocking, set-top boxes, smart TVs, and gaming consoles in DDR4-2400 platforms use the same device at its guaranteed JEDEC bin. Designers targeting guaranteed operation should stay within the 2400 MT/s CL17 specification at 1.2V; overclocked profiles must be validated per platform and are outside the manufacturer warranty.

What is the SK hynix H5AN8G8NCJR-UHC?
The H5AN8G8NCJR-UHC is an 8Gb DDR4 SDRAM from SK hynix organized as 1G x 8, rated for DDR4-2400 (PC4-19200) operation at 1.2V in a 78-ball FBGA package. According to SK hynix family documentation and distributor records, the H5AN8G4/8/6NCJR-xxC series are 8Gb CMOS Double Data Rate IV synchronous DRAMs suited for main-memory applications requiring large density and high bandwidth.
What is the price of H5AN8G8NCJR-UHC?
As of 2026-09-04, the H5AN8G8NCJR-UHC is listed by distributors in the approximate range of USD 2.90 to 4.00 per unit at single-piece quantities, with volume pricing typically falling to the USD 2.80-3.40 range at 1000 pieces. Prices vary by stock holder and market conditions; brokers such as Censtry and Worldway provide quotes within 24 hours depending on quantity required.
Is H5AN8G8NCJR-UHC in stock and where can I buy it online?
Yes, multiple distributors list stock for H5AN8G8NCJR-UHC. Ampheo provides inventory, pricing and datasheet PDF download; Censtry lists the part as new and original with a 180-day warranty; Worldway and netCOMPONENTS also list availability. Availability changes daily, so request a current quote before committing a production BOM.
What is the difference between H5AN8G8NCJR-UHC and H5AN8G8NDJR-UHC?
The core difference is die revision: CJR (C) versus DJR (D). Both are 8Gb DDR4 SDRAMs in the same FBGA-78 footprint at 1.2V, and the UHC suffix denotes the same 2400 MT/s speed bin. In practice, both dies are pin-compatible and drop-in replaceable in most designs; enthusiast overclocking communities document slightly different overclocking headroom between CJR and DJR, but at JEDEC 2400 MT/s timing they are functionally interchangeable after controller retraining.
What is the difference between H5AN8G8NCJR-UHC and H5AN8G8NCJR-VKC?
Both parts are 8Gb 1G x 8 DDR4 SDRAMs in FBGA-78 with identical pinout; they differ only in speed grade. The UHC bin is rated DDR4-2400, while the VKC bin is rated for a higher DDR4 data rate (2666 MT/s class). A faster speed-grade part can generally replace a slower one at the slower part's timing, making VKC a functional upgrade; the reverse substitution requires the controller to run at 2400 MT/s.
Is there a Micron or Samsung drop-in equivalent for H5AN8G8NCJR-UHC?
Yes. Cross-brand equivalents in the same 8Gb x8 DDR4 class and FBGA-78-compatible footprint include the Micron MT40A1G8 AG-062E (8Gb 1G x 8 DDR4) and the Samsung K4A8G085WB series (8Gb x8 DDR4). These are widely cross-referenced by engineers and procurement teams for compatibility, availability, or cost optimization; however, DDR4 device swaps always require DRAM retraining and, in some cases, SPD/BIOS list updates to guarantee timing compatibility.
Where can I download the H5AN8G8NCJR-UHC datasheet PDF?
The H5AN8G8NCJR family datasheet is available from SK hynix official channels and through distributor repositories: Ampheo provides a datasheet PDF download on its product page, and mirrors exist on AllDatasheet, DigChip, and Datasheet Directory (datasheets.globalspec.com). Note the datasheet covers the H5AN8G4NCJR-xxC, H5AN8G8NCJR-xxC, and H5AN8G6NCJR-xxC family variants; the -UHC speed-bin suffix defines the 2400 MT/s operating point.
What package does the H5AN8G8NCJR-UHC use?
The H5AN8G8NCJR-UHC uses an FBGA-78 package (Fine-pitch Ball Grid Array, 78 balls), confirmed by the Worldway distributor record listing Package Description FBGA-78. FBGA is the standard package for DDR4 discrete DRAM components and mates with standard DDR4 component land patterns used on UDIMM, RDIMM, SO-DIMM, and embedded module designs.
Can H5AN8G8NCJR-UHC run faster than 2400 MT/s?
The guaranteed JEDEC rating of the UHC bin is DDR4-2400. However, CJR-die parts of this family are widely documented in consumer overclocking to run stably at 3000-3400 MT/s with adjusted voltage (around 1.35-1.40V VDD) and loosened timings, for example 15-17-17-36 at 3000 MT/s in enthusiast system reports. Such operation is outside the manufacturer warranty and must be validated per system.
Is H5AN8G8NCJR-UHC RoHS compliant?
Yes, distributor records list RoHS Code: Yes for the H5AN8G8NCJR-UHC, and SK hynix family documentation for the NCJR-xxC series is marked Lead-Free and Halogen-Free. REACH compliance is also indicated in distributor data. For formal regulatory documentation (certificate of conformance), request it from SK hynix or your authorized distributor with your purchase order.
When should I choose H5AN8G8NCJR-UHC over a faster speed grade?
Choose the UHC (2400 MT/s) grade when your memory controller or platform validates DDR4-2400 as its maximum supported data rate, or when cost matters more than bandwidth headroom. If the platform supports 2666 MT/s or higher and supply of UHC is constrained, the VKC or RDC grades of the same NCJR family are drop-in faster substitutes that run at 2400 MT/s timings without redesign.
What is the supply voltage of H5AN8G8NCJR-UHC?
The H5AN8G8NCJR-UHC operates from a 1.2V VDD supply, per the AB Sunshine Electronics record (FBGA-78, 1.2 V). DDR4's 1.2V core voltage is a key improvement over DDR3's 1.5V, reducing memory subsystem power. Note DDR4 devices also use a separate 2.5V VPP for word-line boost per the DDR4 standard; consult the datasheet for per-ball supply assignment.
What are the key specifications of H5AN8G8NCJR-UHC that engineers should know?
Key specifications: 8Gb DDR4 SDRAM, organization 1G x 8, DDR4-2400 speed grade (PC4-19200), 1.2V VDD supply, 78-ball FBGA package, CJR die family, RoHS/lead-free/halogen-free compliant, lifecycle status Active. The device provides fully synchronous operation referenced to both clock edges with bank-group architecture for high bandwidth in main-memory applications. All values trace to SK hynix family documentation and distributor records.
Hey Google, what can replace H5AN8G8NCJR-UHC?
Direct drop-in replacements on the same footprint are SK hynix H5AN8G8NDJR-UHC (DJR die, same speed bin), H5AN8G8NCJR-VKC and H5AN8G8NCJR-RDC (same die, different speed grades), plus cross-brand equivalents Micron MT40A1G8AG-062E and Samsung K4A8G085WB-BCWE, all 8Gb x8 DDR4 in FBGA-compatible packages. Any substitution requires DRAM training and, ideally, SPD validation on module-level designs.
Is H5AN8G8NCJR-UHC the same as H5AN8G8NCJR-TFC?
No. Both are 8Gb 1G x 8 DDR4 SDRAMs in FBGA-78 from the same NCJR family, so they share pinout and footprint, but the speed-bin suffix differs: UHC is rated DDR4-2400 while TFC denotes a different (higher, 2666-class) operating point with different guaranteed timings. Enthusiast sources document both appearing in consumer memory kits interchangeably; for guaranteed commercial designs, match the original speed bin or verify your controller tolerates the substituted timing.

Engineering reference data for H5AN8G8NCJR-UHC — comparison, design guidance, and compliance information.

Selection Guide

Choose H5AN8G8NCJR-UHC when your platform is validated at DDR4-2400 and lowest cost at guaranteed timing is the priority - it is the standard CJR die in the ubiquitous FBGA-78 footprint. Choose H5AN8G8NDJR-UHC if CJR supply is constrained; DJR is the same-footprint same-speed-bin alternate (verify controller training lists include DJR). Choose H5AN8G8NCJR-VKC or the Micron MT40A1G8AG-062E / Samsung K4A8G085WB-BCWE equivalents when your controller supports 2666 MT/s or when you need cross-brand second sources for supply resilience - all run 2400 MT/s timings without redesign but cost slightly more. For consumer overclocked kits, CJR or DJR dies are preferred for documented 3000-3400 MT/s headroom. Always re-run DRAM training and update SPD data after any substitution.

Comparison with Alternatives

Parameter This Product H5AN8G8NDJR-UHC H5AN8G8NCJR-VKC MT40A1G8AG-062E K4A8G085WB-BCWE
Package FBGA-78 FBGA-78 - same FBGA-78 - same FBGA-78 - same FBGA-78 - same
Brand SK hynix SK hynix SK hynix Micron Technology Samsung Electronics
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 1G x 8 1G x 8 1G x 8 1G x 8 1G x 8
Speed Grade DDR4-2400 (UHC) DDR4-2400 (UHC) DDR4-2666 (VKC) DDR4-2666 (062E) DDR4-2666 (BCWE)
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Die Revision CJR (C) DJR (D) CJR (C) [DATA_NEEDED] [DATA_NEEDED]
RoHS Compliance Yes Yes Yes Yes Yes

Key Differentiators

  • CJR die with documented overclocking headroom (vs H5AN8G8NDJR-UHC)
  • Multi-die-family supply resilience within SK hynix (vs H5AN8G8NCJR-VKC)
  • Cost advantage at guaranteed 2400 MT/s bin (vs MT40A1G8AG-062E)

Design Notes

DDR4 fly-by routing requires length-matched address/command traces per byte lane group with on-die termination (ODT) configured per the memory controller's training algorithm. For multi-rank designs, follow the controller vendor's DDR4 routing guidelines for trace impedance (40 ohm typical for address/command) and reference-plane continuity under the FBGA-78 ball field. Proper VREF training is essential when substituting die revisions (CJR to DJR), as receiver offset calibration differs slightly between dies.

Plan separate power domains for 1.2V VDD and 2.5V VPP per DDR4 standard practice. Estimated: an 8-chip (8 GB) 64-bit bus at DDR4-2400 draws roughly 2-4 W depending on access intensity; size the VDD rail regulator with at least 50% margin and add bulk capacitance near each DRAM cluster. Verify VRM transient response meets controller soak/sleep state transitions, where current can step by more than 50% in microseconds.

Do not assume drop-in substitution is free: although all listed alternatives share the FBGA-78 footprint class, cross-brand and cross-die swaps require DRAM retraining and, on module-level products, re-programmed SPD data matching the substituted part's speed bin and timings. The UHC bin guarantees only DDR4-2400; designing a platform above this rate with a UHC-suffix part relies on unguaranteed headroom. For production, always match or exceed the original speed bin and update validation test coverage accordingly.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Distributor record lists RoHS Code: Yes, REACH compliance indicated, Part Life Cycle Code Active. SK hynix family documentation marks the NCJR-xxC series Lead-Free & Halogen-Free. Conflict minerals status not stated in provided data.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK hynix H5AN8G8NCJR-UHC H5AN8G8NDJR-UHC H5AN8G8NCJR-VKC MT40A1G8AG-062E K4A8G085WB-BCWE DDR4 SDRAM DRAM Memory IC volatile memory FBGA-78 BGA DDR4-2400 PC4-19200 1.2V VDD CJR die RoHS REACH SPD RDIMM UDIMM main memory PSRR JEDEC DDR4 overclocking
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