H5CG46AGBDX017N - DDR5 16Gb 5600Mbps DRAM | SK Hynix
Référence : H5CG46AGBDX017N ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $112.62 | $112,62 |
| 10 | $106.99 | $1 069,90 |
| 100 | $101.64 | $10 164,00 |
| 500 | $96.56 | $48 280,00 |
| 1 000 | $91.73 | $91 730,00 |
H5CG46AGBDX017N Présentation
A DDR5 SDRAM component is a volatile dynamic random-access memory that stores each bit in a capacitor-based cell and requires periodic refresh. Within the memory hierarchy, it sits above the processor cache and below mass storage, forming the main system memory. The DDR5 generation succeeds DDR4 with an on-die ECC engine, decision feedback equalization (DFE), dual 32-bit (or quad 16-bit) sub-channel architecture, and a lower operating core voltage compared with DDR4.
Key characteristics of this part include its 16Gb single-die density organized as 1G x 16, its 5600 Mbps/pin transfer rate, and its x16 organization, which suits 64-bit memory buses populated with four devices per rank. DDR5 devices also integrate a serial presence detect (SPD) hub configuration when assembled into modules, and per-device features such as MIR and CA training support signal integrity at high data rates.
Architecturally, DDR5 shifts much of the interface budget on-die: on-die ECC (ODT schemes and DQ training) preserves data integrity while keeping the external interface lean, and the bank-group architecture sustains high row-hit efficiency at DDR5-5600 class speeds. Terminated CA/DQ buses enable the fly-by routing used in high-speed DIMM and soldered-down designs.
Typical applications include soldered-down memory for notebook and desktop platforms, client compute modules, industrial controllers and computing modules, embedded logging systems, and networking appliances that require high-bandwidth main memory.
When designing with this device, follow SK hynix layout guidelines for length-matched, fly-by address/command routing and per-byte DQ groups; DDR5-5600 leaves little timing margin for stubs or asymmetrical trace routing.
This page synthesizes distributor stock, pricing references, drop-in alternatives from the same DDR5 family, and practical design notes not found in the raw manufacturer datasheet.
Alternatives de remplacement direct pour H5CG46AGBDX017N — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5CG46AGBDX017N (même facteur de forme et même empreinte) — différant par Interface, Package, Data Rate, Organization, Density.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5CG46AGBDX017
✅ Remplacement direct✓ En stock
$92.1 / unité
Voir la fiche technique →H5CG48AGBDX014N
✅ Remplacement direct✓ En stock
$70 / unité
Voir la fiche technique →H5CG48AGBDX018N
✅ Remplacement direct✓ En stock
$87.42 / unité
Voir la fiche technique →H5CG48AGBDX014
✅ Remplacement direct✓ En stock
$86 / unité
Voir la fiche technique →H5CG48AGBDX018
✅ Remplacement direct✓ En stock
$63.9844 / unité
Voir la fiche technique →H5CG46AGBDX017N Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR5 SDRAM |
| Taille de mémoire | 16 Gb (2 GB) |
| Organisation de la mémoire | 1G x 16 |
| Débit de données | 5600 Mbps/pin (DDR5-5600) |
| Bit Width | 16-bit (x16) |
| Interface | DDR5 SDRAM interface |
| Refresh | 8K/64ms (standard DDR5 refresh) |
| ECC | On-die ECC (ODT per DDR5 JEDEC-class architecture) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant (per JLCPCB/LCSC listing) |
| Application Domain | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |
| Manufacturer | SK hynix |
Guide de configuration des broches du H5CG46AGBDX017N standard
Configuration des broches du H5CG46AGBDX017N (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour H5CG46AGBDX017N.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
H5CG46AGBDX017N convient pour 6 applications: Client Computing Main Memory, Industrial Controllers, Embedded Logging and Data Acquisition, Networking Appliances, Server Memory Modules (Assembly), Replacement Sourcing and BOM Continuity.
Client Computing Main Memory
The H5CG46AGBDX017N fits soldered-down main memory in notebook and mini-PC platforms where DDR5-5600 bandwidth is the platform standard. Its 16Gb density at x16 organization allows four components to populate a 64-bit rank, reaching 8 GB per rank at 5600 Mbps/pin, or roughly 11.2 GB/s per device. In soldered-down designs, the BGA package removes module connector cost and height, and the on-die ECC of the DDR5 generation preserves data integrity without the pin overhead of side-band ECC. Designers should budget for DDR5 training routines during boot and follow fly-by CA routing to meet timing at speed.
Recommandé
Industrial Controllers
Industrial controllers benefit from the H5CG46AGBDX017N's soldered BGA format, which withstands vibration and thermal cycling better than socketed SODIMMs. The 5600 Mbps data rate provides bandwidth headroom for real-time control loops, motion profiles, and data buffering, while the 16Gb density supports in-memory trending and protocol stacks. DDR5 on-die ECC reduces silent data corruption in continuous-duty deployments, complementing standard DRAM refresh. Because industrial enclosures often run elevated ambient temperatures, designers must derate against the datasheet temperature range and consider self-refresh behavior during safe shutdown to preserve state in nonvolatile companion storage.
Recommandé
Embedded Logging and Data Acquisition
In embedded logging systems, the H5CG46AGBDX017N acts as a high-bandwidth ring buffer between fast sensors and slower nonvolatile storage. At DDR5-5600, a single device sustains about 11.2 GB/s read bandwidth, allowing burst captures from ADC arrays or camera interfaces to be absorbed in DRAM and flushed to flash at leisure. The 1G x 16 organization simplifies 16-bit and 32-bit buses; two devices form a 32-bit bus with no external ECC needed for on-die integrity. Designers should size the logging pipeline so DRAM residency is bounded, since DRAM is volatile and refresh-only retention ends at power loss.
Recommandé
Networking Appliances
Routers, switches, and security gateways need deep packet buffers and large flow tables, and the H5CG46AGBDX017N supplies both: 16Gb per device with 5600 Mbps/pin sustains line-rate processing for multi-gigabit ports. Multiple x16 devices can be arranged into 64-bit or 128-bit buses to match SoC memory controllers, and DDR5 bank-group architecture keeps random-access efficiency high for hash-table and queue workloads. Soldered BGA memory also suits fanless outdoor and edge equipment where connector reliability matters. Thermal design must account for sustained DRAM traffic in hot ambient cabinets.
Recommandé
Server Memory Modules (Assembly)
DDR5 server RDIMMs and LRDIMMs are assembled from monolithic DDR5 components such as the H5CG46AGBDX017N. Module manufacturers mount nine or more devices per rank to implement side-band or link ECC on top of the on-die ECC, and the SPD hub on the module describes the mounted speed bin to the host BIOS. The 5600 Mbps rating aligns with mainstream server platform memory clocks. Module assemblers must verify die revision compatibility across lot codes, run per-device training patterns, and validate thermal profiles under sustained full-bandwidth workloads typical of cloud and virtualization fleets.
Recommandé
Replacement Sourcing and BOM Continuity
For buyers maintaining legacy or active BOMs, the H5CG46AGBDX017N serves as a replacement-sourcing target when original DDR5 allocations run short, and its same-family siblings (H5CG46AGBDX017, H5CG48AGBDX014N/018N) act as engineering-approved substitutions after binning checks. Commodity DRAM allocation cycles can stretch lead times, so qualifying two family members in the same footprint de-risks production. Distributor stock reported in early September 2026 (tens of thousands of pieces across icDirectory, Octopart, and Wolfchip) supports both spot buys and contracted supply for this purpose.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5CG46AGBDX017N — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5CG46AGBDX017 | H5CG48AGBDX014N | H5CG48AGBDX018N | H5CG48AGBDX014 |
|---|---|---|---|---|---|
| Package | FBGA (BGA), monolithic DDR5 die | FBGA (BGA) - same | FBGA (BGA) - same | FBGA (BGA) - same | FBGA (BGA) - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Generation | DDR5 | DDR5 | DDR5 | DDR5 | DDR5 |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| On-die ECC | Yes (DDR5 architecture) | Yes | Yes | Yes | Yes |
| Suffix / Revision | -017N | -017 (no N suffix) | -014N | -018N | -014 (no N suffix) |
Principaux différenciateurs
- DDR5-5600 speed class (vs H5ANAG6NCMR-XNI (DDR4))
- Same-die suffix variant available (vs H5CG46AGBDX017)
- Family speed-bin flexibility (vs H5CG48AGBDX018N)
Notes de conception
DDR5-5600 leaves minimal timing margin: route address/command in fly-by topology with per-device stubs as short as possible, and length-match each DQ byte group within the SK hynix layout guideline tolerance. Use per-byte ODT settings from the datasheet and plan for write leveling and read training in the controller bring-up. Avoid split planes under the CA bus and reference all high-speed traces to a continuous ground plane. Estimated signal-integrity effort at 5600 Mbps is 30-50% greater than DDR4-3200 routing on the same layer count.
DDR5 devices require multiple rails (VDD, VDDQ and associated termination supplies). Provide bulk and local decoupling close to each BGA ball cluster, following the datasheet's capacitor map. Estimated: a 1G x16 device at DDR5-5600 can draw on the order of hundreds of mA average, with burst currents during bank activation; size the PMIC (typically a DDR5-specific VDDQ termination regulator) with margin for simultaneous activation. Never share the termination rail with noisy switching loads.
Do not assume speed-bin interchange within the H5CG family without a controller boot test: suffix codes (-014N, -017N, -018N) denote different binning and revision, and the SPD/training tables differ. Also confirm die revision consistency when mixing lot codes on the same PCB, since DDR5 training is sensitive to per-die parameters. Finally, download the current SK hynix datasheet revision rather than third-party mirrors before finalizing the land pattern.
Informations de conformité
RoHS compliance per JLCPCB/LCSC listing (DDR SDRAM ROHS). REACH, halogen-free, and conflict-minerals declarations not stated in verified data - request manufacturer CoC.
