K4RAH086VP-BCWM - 16Gb DDR5 5600Mbps DRAM | Samsung
Référence : K4RAH086VP-BCWM ✓ Actif| Qté | Prix unitaire | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K4RAH086VP-BCWM Présentation
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the DDR DRAM family standardized by JEDEC. Compared with DDR4, DDR5 doubles the bank groups, moves the power management IC onto the DIMM or package, and lowers the per-bit supply voltage, delivering higher bandwidth and lower power per transfer. In the memory hierarchy, this device sits at the component level: DRAM -> DDR5 SDRAM -> volatile memory -> semiconductor memory IC.
Key features include a 16 Gbit density per die organized as 2G x 8, a 5600 Mbps/pin transfer rate (equivalent to DDR5-5600 operation, PC5-44800 class bandwidth), and a 1.1 V core supply consistent with the JEDEC DDR5 specification. The parallel interface supports burst-oriented access with on-die ECC available in DDR5 devices for improved reliability.
Architecturally, the K4RAH086VP-BCWM belongs to Samsung's DDR5 component portfolio for industrial-class applications. Higher-speed operation shortens memory access latency at the system level, while the 1.1 V supply reduces dynamic power versus DDR4 1.2 V solutions.
Typical applications include industrial servers and storage controllers, embedded computing modules, network appliances, and data acquisition systems that require high-bandwidth main memory.
Design consideration: DDR5 signaling requires careful length-matched PCB routing and onboard PMIC voltage regulation; verify power-rail sequencing and on-die termination settings against the Samsung datasheet before layout.
This page synthesizes distributor stock data, cross-reference candidates, and engineering selection guidance not consolidated in the manufacturer datasheet.
Alternatives de remplacement direct pour K4RAH086VP-BCWM — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4RAH086VP-BCWM (même facteur de forme et même empreinte) — différant par Package, Interface, Data Rate, Technology, Memory Format.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4RAH086VB-BIWM
✅ Remplacement direct✓ En stock
$4.85 / unité
Voir la fiche technique →K4RAH086VB-BIQK
✅ Remplacement direct✓ En stock
$4.25 / unité
Voir la fiche technique →K4RAH086VB-BCWM
✅ Remplacement direct✓ En stock
$44.5455 / unité
Voir la fiche technique →K4RAH086VE-BCWM
✅ Remplacement direct✓ En stock
$7.6 / unité
Voir la fiche technique →K4RAH086VP-BCWM Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR5 SDRAM |
| Taille de mémoire | 16 Gb |
| Memory Organization | 2G x 8 |
| Débit de données | 5600 Mbps/pin |
| Tension d'alimentation | 1.1 V |
| Interface | Parallel |
| Technology | DRAM DDR5 |
| Memory Format | DRAM |
| Volatile / Non-Volatile | Volatile |
| Type de montage | Surface Mount |
| Packaging | Tray |
| Application Segment | Industrial |
| Statut du cycle de vie | Active |
| Statut RoHS | unknown |
Guide de configuration des broches du K4RAH086VP-BCWM standard
Configuration des broches du K4RAH086VP-BCWM (boîtier standard). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4RAH086VP-BCWM.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4RAH086VP-BCWM convient pour 6 applications: Industrial Servers and Storage Controllers, Embedded Computing and Edge Modules, Networking and Communication Equipment, Data Acquisition and Test Instrumentation, AI Inference at the Edge, Automated Test and Burn-In Systems.
Industrial Servers and Storage Controllers
Industrial servers and storage controllers demand main memory that combines high bandwidth with reliability under extended operating conditions. The Samsung K4RAH086VP-BCWM fits this role with its 16 Gb density, 5600 Mbps/pin DDR5 transfer rate, and 1.1 V supply; the x8 organization allows flexible bus widths when multiple components populate a channel. IBS Electronics explicitly positions this part for industrial applications. In a typical design, eight components form a 64-bit channel delivering roughly 4.5 GB/s per component (DDR5-5600 x8), while the lower 1.1 V rail reduces dynamic power versus DDR4 1.2 V solutions. DDR5's on-die features reduce controller load in RAID and caching workloads, and the industrial speed-grade suffix supports the thermal and longevity expectations of 24/7 factory-floor servers.
Recommandé
Embedded Computing and Edge Modules
Embedded computing modules (COM Express, SMARC, custom SBCs) require compact, high-density DRAM components to deliver server-like bandwidth in constrained form factors. The K4RAH086VP-BCWM provides 16 Gb per component organized as 2G x 8 at 5600 Mbps, letting a single 64-bit channel reach 32 GB with sixteen components, or 16 GB with eight. The 1.1 V operating voltage lowers both heat generation and power budget, which is critical for fanless edge enclosures. DDR5's split CA bus and on-die features simplify routing in dense stacked-module designs. Designers should pair the DRAM with a DDR5-capable SoC and a compliant PMIC, and follow Samsung's length-matching rules; the industrial temperature positioning of this part suits outdoor gateways, machine vision, and in-vehicle compute where consumer-grade memory would be marginal.
Recommandé
Networking and Communication Equipment
Routers, switches, and 5G network appliances rely on DRAM for packet buffers, flow tables, and control-plane software. The K4RAH086VP-BCWM's 5600 Mbps/pin data rate and 16 Gb density provide the throughput headroom for line-rate packet processing, while the x8 organization supports the 64-bit and 72-bit (with ECC) buses common in networking ASICs. Because network equipment runs continuously, the 1.1 V supply meaningfully reduces per-component idle and active power compared with DDR4 parts at the same bandwidth. In buffer-memory subsystems, place the DRAM components close to the ASIC with per-byte trace-length matching within the datasheet skew budget, and configure on-die termination to match the stackup impedance. Industrial-grade positioning of this Samsung part aligns with telecom central-office and outdoor-cabinet temperature expectations.
Recommandé
Data Acquisition and Test Instrumentation
High-speed data acquisition systems and test instruments stream ADC data into large memory buffers, demanding both capacity and sustained write bandwidth. A single K4RAH086VP-BCWM offers 16 Gb (2 GB) per component at 5600 Mbps per pin, so an eight-deep x8 bank achieves 16 GB with approximately 36 GB/s aggregate theoretical bandwidth before protocol overhead - sufficient to buffer multi-GSPS ADC streams. The 1.1 V rail limits local heating in dense instrument chassis. In these designs, the DRAM controller typically lives in an FPGA; verify DDR5 training support and use Samsung's write-leveling and read-training sequences. Choose this industrial-suffix part over commodity desktop DRAM because instrument vendors require long-term supply continuity and characterized operation across the full commercial-industrial temperature span.
Recommandé
AI Inference at the Edge
Edge AI appliances for vision inspection and video analytics need fast main memory to feed accelerators with model weights and frame buffers. The K4RAH086VP-BCWM delivers 16 Gb per component at 5600 Mbps, and a dual-channel design (16 x8 components, 4 GB each bank) provides tens of GB/s of sustained bandwidth - a practical fit for NPU or GPU SoCs streaming ResNet- or transformer-class models. The 2G x 8 organization and standard DDR5 parallel interface allow direct attachment to DDR5 host controllers without PHY bridges, reducing latency versus buffered module solutions. Power-sensitive edge enclosures benefit from the 1.1 V operation, which cuts DRAM subsystem power by roughly 8% at equal bandwidth versus DDR4 1.2 V. Follow Samsung's Vref and termination guidance for clean eye diagrams at full speed.
Recommandé
Automated Test and Burn-In Systems
Memory burn-in handlers and ATE load boards must exercise DDR5 components at full speed while monitoring parametric behavior. The K4RAH086VP-BCWM serves both as a device under test target class and as on-board reference memory in system-level test (SLT) fixtures, thanks to its mainstream 16 Gb x8 DDR5-5600 configuration that matches high-volume production memory. Its tray packaging simplifies automated pick-and-place into burn-in boards. Test engineers should account for the 1.1 V supply tolerance window and per-pin 5600 Mbps signaling when calibrating driver strengths and termination on the load board, and should verify the speed-bin suffix code so burn-in profiles match the qualified grade. Stock depth of 40,000+ pcs across distributors as of September 2026 supports volume test-house procurement.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4RAH086VP-BCWM — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4RAH086VB-BIWM | K4RAH086VB-BCWM | K4RAH086VE-BCWM |
|---|---|---|---|---|
| Brand | Samsung Electronics (Samsung Semiconductor) | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Technology / Data Rate | DDR5, 5600 Mbps | DDR5, 5600 Mbps (family) | DDR5, 5600 Mbps (family) | DDR5, 5600 Mbps (family) |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Interface | Parallel | Parallel | Parallel | Parallel |
Principaux différenciateurs
- DDR5-5600 bandwidth leadership over DDR4 site alternatives (vs K4A8G085WB)
- x8 organization suited to standard 64/72-bit channels (vs K4RAH165VB-BCQK)
- Industrial application positioning (vs K4RAH086VB-BIWM)
Notes de conception
DDR5 at 5600 Mbps/pin requires strict fly-by routing of the CA bus and per-byte length matching of DQ/DQS groups. Keep trace-length skew within the Samsung datasheet window, maintain 40-ohm single-ended / 80-ohm differential reference impedances typical of DDR5 layouts, and route over continuous reference planes. Avoid via stubs on DQ nets; use back-drilling on thick boards. Note: impedance figures are common DDR5 layout practice - confirm exact tolerances in the Samsung datasheet signal-integrity section.
The K4RAH086VP-BCWM operates from a 1.1 V rail per the JEDEC DDR5 standard. In component-level (solder-down) designs, the host board must generate this rail with a DDR5-compliant PMIC including proper power-up sequencing and VDDQ termination. Estimated: a 16-bit channel of eight x8 components drawing typical DDR5-5600 idle currents of a few tens of mA per component results in roughly 1-2 W of standby subsystem power - size the buck converter and copper pours accordingly, and verify exact current figures against the Samsung datasheet IDD tables.
Samsung encodes speed bin, package, and temperature grade in the part-number suffix, so K4RAH086VP-BCWM and K4RAH086VB-BCWM are not guaranteed to be interchangeable in all platforms. Memory-controller training (read/write leveling, DFE calibration) is speed-bin sensitive; substituting a different suffix without re-qualifying can cause boot failures. Always decode the suffix from the official Samsung ordering-information table and validate boot on the target platform before switching supply sources.
Informations de conformité
Compliance data was not stated on retrieved distributor pages; request material declarations and certificates from Samsung or the distributor at time of order.
