H5AN8G6NAFR - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
Référence : H5AN8G6NAFR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0.1944 | $0,19 |
| 10 | $0.18 | $1,80 |
| 100 | $0.16 | $16,00 |
| 500 | $0.14 | $70,00 |
| 1 000 | $0.12 | $120,00 |
H5AN8G6NAFR Présentation
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It provides higher module density and lower voltage (1.2V vs 1.5V) while delivering increased bandwidth. DDR4 is a key component in modern computing systems, from servers and desktops to embedded and networking equipment, where it serves as the main system memory. The H5AN8G6NAFR is part of the DDR4 SDRAM family, which includes x4, x8, and x16 configurations, and is essential for high-performance computing.
Key features include a 1.2V power supply, 8Gb density, 512M x 16 organization, and a 96-ball FBGA package. It supports data rates up to 2400 MT/s (PC4-19200) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, CRC, and write leveling. The device is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
Technically, the H5AN8G6NAFR uses a high-performance CMOS process and features a pseudo-open-drain interface for compatibility with DDR4 controllers. It incorporates a DLL (Delay-Locked Loop) to align data output with the clock, and supports on-die termination for improved signal integrity. The device also includes a temperature sensor for auto-refresh rate adjustment, enhancing reliability in varying thermal conditions.
Typical applications include servers, data centers, networking equipment, and high-end consumer electronics such as gaming PCs and workstations. Its high density and bandwidth make it ideal for memory-intensive tasks like virtualization, big data analytics, and real-time signal processing. The 1.2V operation reduces power consumption, making it suitable for energy-efficient designs.
When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the pins. Follow the DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ calibration resistor (240 ohm) as specified in the datasheet.
Alternatives de remplacement direct pour H5AN8G6NAFR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G6NAFR (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Burst Length, Interface.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NAFR-UHC
✅ Remplacement direct✓ En stock
$5.7422 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →H5AN8G6NDJR
✅ Remplacement direct✓ En stock
$35 / unité
Voir la fiche technique →MT40A512M16JY-075E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$30.5 / unité
Voir la fiche technique →K4A8G165WB-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.55 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →H5AN8G6NAFR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 512M x 16 |
| Tension d'alimentation | 1.2 V |
| Débit de données | 2400 MT/s |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | 0°C to +85°C |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
| CRC | Yes |
| Write Leveling | Yes |
Configuration des broches de H5AN8G6NAFR
| Broche A1 | VDD — Power supply |
| Broche A2 | VSS — Ground |
| Broche A3 | DQ0 — Data input/output 0 |
| Broche A4 | DQ1 — Data input/output 1 |
| Broche A5 | VDDQ — Power supply for output |
| Broche A6 | DQ2 — Data input/output 2 |
| Broche A7 | DQ3 — Data input/output 3 |
| Broche A8 | VSSQ — Ground for output |
| Broche A9 | DQ4 — Data input/output 4 |
| Broche A10 | DQ5 — Data input/output 5 |
| Broche A11 | VDDQ — Power supply for output |
| Broche A12 | DQ6 — Data input/output 6 |
| Broche A13 | DQ7 — Data input/output 7 |
| Broche A14 | VSS — Ground |
| Broche A15 | VDD — Power supply |
Applications typiques
H5AN8G6NAFR convient pour 6 applications: Server Main Memory, Networking Equipment, Data Center Storage, High-Performance Computing, Embedded Systems, Consumer Electronics.
Server Main Memory
The H5AN8G6NAFR provides high-density 8Gb memory with 2400 MT/s bandwidth, making it ideal for server DIMMs. Its 1.2V operation reduces power consumption in data centers, and the 512M x 16 organization allows for flexible module configurations. The device supports ECC and error detection features, ensuring reliability in mission-critical server environments. With a 96-ball FBGA package, it enables compact module designs that maximize memory capacity per board.
Recommandé
Networking Equipment
In networking switches and routers, the H5AN8G6NAFR provides the high bandwidth and low latency required for packet buffering and forwarding. Its 2400 MT/s data rate supports line-rate processing, while the 8Gb density allows for large routing tables and flow caches. The device's low 1.2V supply reduces thermal load in dense chassis, and its FBGA package enables high-density board layouts. The auto self-refresh feature helps maintain data integrity during idle periods, which is critical for network reliability.
Recommandé
Data Center Storage
The H5AN8G6NAFR is used in storage controllers and SSDs as cache memory, providing fast access to frequently used data. Its 8Gb density and 2400 MT/s speed enable high-throughput caching, while the 1.2V supply minimizes power consumption in large storage arrays. The device's write leveling and dynamic ODT features ensure signal integrity in high-speed interfaces, which is essential for reliable data transfer. The FBGA package allows for compact controller designs, and the RoHS compliance meets environmental standards for data center equipment.
Recommandé
High-Performance Computing
In HPC systems, the H5AN8G6NAFR provides the memory bandwidth needed for complex simulations and data analysis. Its 2400 MT/s data rate and 8Gb density support large working sets, while the 1.2V supply reduces power in high-density compute nodes. The device's CRC and write leveling features enhance data integrity in high-speed links, which is critical for long-running computations. The FBGA package enables high-density memory modules, and the device's thermal characteristics are suitable for air-cooled HPC environments.
Recommandé
Embedded Systems
The H5AN8G6NAFR is suitable for high-end embedded systems such as industrial PCs and medical imaging equipment. Its 8Gb density provides ample memory for complex applications, and the 1.2V supply is compatible with low-power embedded processors. The device's wide operating temperature range (0°C to +85°C) ensures reliability in industrial environments. The FBGA package allows for compact designs, and the device's low power consumption extends battery life in portable embedded systems.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the H5AN8G6NAFR delivers the memory performance needed for demanding applications. Its 2400 MT/s speed and 8Gb density support smooth multitasking and gaming, while the 1.2V supply reduces power consumption and heat. The device's auto self-refresh and dynamic ODT features improve reliability and signal integrity, which is important for overclocking scenarios. The FBGA package enables slim laptop designs, and the RoHS compliance meets consumer electronics regulations.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G6NAFR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | H5AN8G6NDJR | MT40A512M16JY-075E | K4A8G165WB-BCWE | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics | Alliance Memory |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- High density 8Gb in x16 organization (vs MT40A512M16JY-075E)
- Low 1.2V supply voltage (vs K4A8G165WB-BCWE)
- Wide operating temperature range (vs AS4C512M16D4A-62BCN)
Notes de conception
Ensure stable power supply to VDD and VDDQ pins. Use 0.1uF and 1uF decoupling capacitors placed as close as possible to each power pin. The 1.2V supply should be clean and well-regulated to avoid data corruption.
Follow DDR4 layout guidelines for impedance matching and signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within the specified skew limits to ensure reliable operation at 2400 MT/s.
The H5AN8G6NAFR operates up to +85°C. Ensure adequate airflow or heatsinking in high-density designs. Monitor the temperature sensor and adjust refresh rate if necessary to maintain data integrity.
Informations de conformité
Lead-free and halogen-free per datasheet description. RoHS compliant. Not AEC-Q100 qualified.
