IAUCN04S7N009ATMA1 - 40V 0.96mΩ 175A OptiMOS 7 | Infineon
Référence : IAUCN04S7N009ATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.85 | $28,50 |
| 100 | $2.45 | $245,00 |
| 500 | $2.05 | $1 025,00 |
| 1 000 | $1.78 | $1 780,00 |
| 5 000 | $1.55 | $7 750,00 |
IAUCN04S7N009ATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying signals in power electronics. Power MOSFETs occupy the role of low-voltage fast-switching elements within the power semiconductor hierarchy, sitting between discrete MOSFETs and wider IGBT/MOSFET modules. The OptiMOS family is Infineon's family of trench-gate N-channel MOSFETs, and OptiMOS 7 represents the latest generation with the lowest figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) in the 40 V class.
Key features include a 40 V drain-to-source breakdown (V<sub>DSS</sub>), a 10 V gate drive rating for full R<sub>DS(on)</sub> enhancement, and a continuous drain current of 175 A at 25°C case. The PG-TDSON-8-34 package exposes the die on a large source pad for low thermal resistance. The device is qualified to AEC-Q101, allowing direct use in automotive 12 V/24 V systems including 48 V mild-hybrid applications.
The OptiMOS 7 technology uses an advanced trench-gate cell design with reduced gate charge and switching losses, optimized for high-frequency synchronous rectification. Compared with previous OptiMOS generations, the figure-of-merit improves by ~30%, enabling either higher efficiency at the same frequency or higher switching frequencies at the same efficiency in SMPS, OR-ing, and motor-drive applications.
Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current OR-ing in 48 V bus systems, synchronous rectification in telecom and server SMPS, battery protection in 12 V/24 V/48 V packs, and DC-DC converter high-side and low-side switches. The 0.96 mΩ R<sub>DS(on)</sub> minimizes conduction loss in high-current paths.
When designing with this MOSFET, pay attention to gate-drive voltage: full R<sub>DS(on)</sub> enhancement requires 10 V V<sub>GS</sub>; 4.5 V operation is possible with degraded on-resistance. Use a gate resistor in the 1-10 Ω range to control switching speed and ringing. The exposed pad must be soldered to a sufficiently large copper pour to achieve the rated thermal performance.
Alternatives de remplacement direct pour IAUCN04S7N009ATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUCN04S7N009ATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Part Family, Drain-Source Voltage (VDS), Automotive Qualification.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUCN10S7N021ATMA1
✅ Remplacement direct✓ En stock
$2.05 / unité
Voir la fiche technique →BSC123N08NS3GATMA1
✅ Remplacement direct✓ En stock
$0.71 / unité
Voir la fiche technique →ISC046N13NM6ATMA1
✅ Remplacement direct✓ En stock
$1.08 / unité
Voir la fiche technique →BSZ110N08NS5ATMA1
✅ Remplacement direct✓ En stock
$0.4423 / unité
Voir la fiche technique →IAUC60N04S6N044ATMA1
✅ Remplacement direct✓ En stock
$0.98 / unité
Voir la fiche technique →IAUCN04S7N009ATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D) | 175 A |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ |
| Gate Drive Voltage (V_GS) | 10 V |
| Boîtier | PG-TDSON-8-34 (Surface Mount) |
| Type de montage | Surface Mount |
| Température de fonctionnement | -55C to +175C |
| Qualification | AEC-Q101 (Automotive) |
| Niveau MSL | 1 |
| Statut RoHS | Compliant |
| Configuration | Single N-Channel |
| Supplier Device Package | PG-TDSON-8-34 |
Configuration des broches de IAUCN04S7N009ATMA1
| Broche 1 | Gate — Gate input (10V typical drive) |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection |
| Broche 4 | NC — Not connected |
| Broche 5 | Drain — Drain connection |
| Broche 6 | Drain — Drain connection |
| Broche 7 | Source — Source connection |
| Broche 8 | Source — Source connection |
| Broche EP | Source (Exposed Pad) — Source pad for thermal dissipation |
Zone de fonctionnement sûr
Applications typiques
IAUCN04S7N009ATMA1 convient pour 6 applications: Automotive BLDC Motor Drives, 48V Bus OR-ing and Hot-Swap, Synchronous Rectification in Server SMPS, Battery Protection and Disconnect, High-Current DC-DC Buck Converter, Solar Micro-Inverter Switching Stage.
Automotive BLDC Motor Drives
The IAUCN04S7N009ATMA1 fits automotive BLDC motor drives such as electric power steering, water pumps, oil pumps, and cooling fans because its 175 A continuous drain current and 0.96 mΩ R<sub>DS(on)</sub> minimize conduction loss in PWM switching. At 100 A RMS phase current and 20 kHz PWM, conduction loss is approximately I² × R = 100² × 0.00096 = 9.6 W, which the PG-TDSON-8-34 package dissipates reliably on a 1 square-inch copper pour. AEC-Q101 qualification allows direct deployment in 12 V/24 V body and chassis electronics.
Recommandé
48V Bus OR-ing and Hot-Swap
The IAUCN04S7N009ATMA1 serves 48 V mild-hybrid bus OR-ing and hot-swap applications because its 40 V V<sub>DSS</sub> handles the upper end of 12 V/24 V rails while the 175 A I<sub>D</sub> rating supports paralleled battery and super-capacitor banks. With 0.96 mΩ R<sub>DS(on)</sub>, the conduction loss at 50 A continuous is only 2.4 W, allowing high-efficiency redundant power designs. The AEC-Q101 qualification is critical for 48 V automotive power-net architectures that must survive ISO 7637-2 transient pulses.
Recommandé
Synchronous Rectification in Server SMPS
The IAUCN04S7N009ATMA1 operates as a synchronous rectifier on the secondary side of 12 V-output server and telecom DC-DC converters because its low R<sub>DS(on)</sub> and trench-gate design minimize body-diode reverse-recovery loss at high switching frequencies. At 100 A output current and 300 kHz switching, conduction loss is approximately 9.6 W per device; using two devices in parallel halves the loss to 2.4 W per MOSFET. The PG-TDSON-8-34 exposed pad supports the high continuous current with proper PCB thermal design.
Recommandé
Battery Protection and Disconnect
The IAUCN04S7N009ATMA1 fits 12 V/24 V/48 V battery-pack protection and disconnect circuits because its 0.96 mΩ R<sub>DS(on)</sub> keeps the protection path loss minimal during normal operation while the 175 A I<sub>D</sub> rating handles full battery discharge currents. The 40 V V<sub>DSS</sub> comfortably covers 24 V nominal battery systems including transient over-voltage. AEC-Q101 qualification is required for automotive traction and auxiliary battery packs.
Recommandé
High-Current DC-DC Buck Converter
The IAUCN04S7N009ATMA1 is well-suited for the high-side and low-side switches in 12 V-to-1 V or 24 V-to-5 V high-current DC-DC converters where its 0.96 mΩ R<sub>DS(on)</sub> and 175 A rating minimize conduction loss at high duty cycles. At 60 A output and 50% duty cycle, RMS current is approximately 60 A through each MOSFET switch; conduction loss per device is roughly 3.5 W, well within PG-TDSON-8-34 thermal limits. The OptiMOS 7 low gate charge enables high switching frequency for compact magnetics.
Recommandé
Solar Micro-Inverter Switching Stage
The IAUCN04S7N009ATMA1 operates as the primary-side switching element in low-voltage solar micro-inverters where its 40 V V<sub>DSS</sub> matches 12 V/24 V battery-side architectures and the 0.96 mΩ R<sub>DS(on)</sub> keeps efficiency high at continuous 50-100 A switching. OptiMOS 7 technology provides robust avalanche energy capability, important for handling the inductive kick from photovoltaic panel parasitics. AEC-Q101 qualification provides reliability margin for outdoor installations subject to thermal cycling.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUCN04S7N009ATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUCN10S7N021ATMA1 | BSC123N08NS3GATMA1 | ISC046N13NM6ATMA1 | BSZ110N08NS5ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) |
| V_DSS | 40 V | 100 V | 80 V | 40 V | 80 V | 40 V |
| R_DS(on) Max @ V_GS=10V | 0.96 mΩ | 2.1 mΩ | 1.23 mΩ | 0.46 mΩ | 1.1 mΩ | 0.44 mΩ |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 6 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes | Yes | Yes | Yes (AEC-Q101) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Principaux différenciateurs
- Lowest R_DS(on) in 40V OptiMOS 7 generation (vs ISC046N13NM6ATMA1 (OptiMOS 6))
- Higher V_DSS headroom for 24V automotive systems (vs BSC123N08NS3GATMA1 (80V))
- Latest OptiMOS 7 generation performance (vs IAUC60N04S6N044ATMA1 (OptiMOS 6))
Notes de conception
Estimated: At 100 A continuous load and 0.96 mΩ R_DS(on), conduction loss is I² × R = 100² × 0.00096 = 9.6 W. The PG-TDSON-8-34 package requires at least 1 square inch of 2 oz copper on the source pad to keep junction temperature rise manageable. For continuous operation above 50 A, additional cooling or a heatsink may be required. Refer to the SOA curve in the Infineon datasheet for the safe operating boundary at your switching frequency.
Place the gate driver within 5 mm of the gate pin to minimize parasitic inductance in the gate-drive loop. Use a Kelvin-source connection if available on the package to avoid source-inductance-induced gate-drive ringing. The exposed source pad must be fully soldered to the PCB copper pour to achieve rated thermal performance and low source inductance.
Do not operate the IAUCN04S7N009ATMA1 above 32 V continuous drain-to-source voltage to allow margin for automotive load-dump transients per ISO 7637-2. Use a gate resistor in the 1-10 Ω range to control switching speed and limit ringing. Ensure the V_GS drive is at least 10 V to achieve the datasheet 0.96 mΩ R_DS(on); 4.5 V operation is possible but R_DS(on) increases substantially.
Informations de conformité
AEC-Q101 qualified (automotive discrete standard, equivalent level to AEC-Q100). RoHS compliant per Infineon product page. Halogen-free status not explicitly stated in verified data.
