IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
Référence : IAUS260N10S5N019TATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $5.25 | $5,25 |
| 10 | $4.78 | $47,80 |
| 100 | $4.12 | $412,00 |
| 500 | $3.65 | $1 825,00 |
| 1 000 | $3.29 | $3 290,00 |
| 3 000 | $2.95 | $8 850,00 |
IAUS260N10S5N019TATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion applications. MOSFETs belong to the discrete semiconductor hierarchy (MOSFET -> transistor -> semiconductor device) and serve as the primary switching element in DC-DC converters, motor drives, and automotive electronic systems. The 100 V class of MOSFETs targets 48 V automotive bus rails, industrial power tools, and high-current synchronous rectification stages.
Key features include an industry-leading 1.9 mΩ Rds(on) at 10 V Vgs, 300 W continuous power dissipation at Tc, and a topside-cooled TOLT package that enables direct attachment to a heatsink on the top of the device. The OptiMOS™ 5 generation delivers a figure-of-merit improvement of approximately 30% versus the previous OptiMOS™ 3 platform, with lower gate charge (Qg) and reduced switching losses. The device is qualified for automotive use cases per the IAUS part-number prefix.
The IAUS260N10S5N019TATMA1 uses a trench-gate MOSFET structure optimized for low conduction loss at high currents, making it particularly suited to high-power-density automotive 48 V applications. The topside-cooled package dramatically improves thermal resistance (RthJC) by decoupling the drain thermal path from the PCB, allowing the PCB to remain compact while the heatsink is mounted on the package top side.
Typical applications include 48 V automotive pumps, electric fans, e-compressors for electric vehicle HVAC systems, and high-current DC-DC converters. The combination of very low Rds(on) and topside cooling makes this part especially valuable where PCB bottom-side heatsinking is impractical or impossible due to chassis or enclosure constraints.
When designing with this part, pay close attention to the gate-drive circuit: a peak gate current of several amps is needed to switch the large die area quickly. Use a dedicated gate-driver IC (such as the Infineon 1EDN series) and minimize the gate-loop inductance. The topside thermal pad must be mated to a heatsink with a defined torque and thermal interface material to achieve datasheet RthJC ratings.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for sourcing and qualifying the IAUS260N10S5N019TATMA1.
Alternatives de remplacement direct pour IAUS260N10S5N019TATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IAUS260N10S5N019TATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Product Family.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IAUZ18N10S5L420ATMA1
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Voir la fiche technique →BSC076N04NDATMA1
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Voir la fiche technique →ISC015N06NM5ATMA1
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Voir la fiche technique →IGLR70R200D2SXUMA1
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Voir la fiche technique →IPC100N04S5L1R5ATMA1
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Voir la fiche technique →IAUS260N10S5N019TATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 |
| Type de transistor | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 260 A (Tj) |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | 300 W (Tc) |
| Boîtier | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Type de montage | Surface Mount |
| Nombre de broches | 16 |
| Plage de température de fonctionnement | -55 C to +175 C (Tj) |
| Technology | OptiMOS 5 trench-gate |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) |
| Statut RoHS | Compliant |
Configuration des broches de IAUS260N10S5N019TATMA1
| Broche 1 | Source — Source connection (pin 1 of 16) |
| Broche 2 | Source — Source connection |
| Broche 3 | Source — Source connection |
| Broche 4 | Source — Source connection |
| Broche 5 | Source — Source connection |
| Broche 6 | Source — Source connection |
| Broche 7 | Source — Source connection |
| Broche 8 | Source — Source connection |
| Broche 9 | Source — Source connection |
| Broche 10 | Source — Source connection |
| Broche 11 | Source — Source connection |
| Broche 12 | Source — Source connection |
| Broche 13 | Gate — Gate drive input |
| Broche 14 | Source — Source connection |
| Broche 15 | Source — Source connection |
| Broche 16 | Drain — Drain connection (also top thermal pad serves as main drain thermal path) |
Zone de fonctionnement sûr (DC, Tc=25C)
Applications typiques
IAUS260N10S5N019TATMA1 convient pour 6 applications: 48V Automotive Coolant Pump, Electric Vehicle HVAC E-Compressor, 48V Electric Radiator Fan, Industrial High-Current DC-DC Converter, 48V Battery Management System (BMS), Telecom 48V Synchronous Rectification.
48V Automotive Coolant Pump
The IAUS260N10S5N019TATMA1 fits 48 V automotive coolant pumps because its 100 V Vds provides 2x headroom over the nominal 48 V bus (handles 48 V load-dump transients to ~70 V), and the 1.9 mΩ Rds(on) keeps conduction loss below 5 W even at 150 A continuous pump current. The 260 A drain-current rating covers inrush when the pump starts against a stalled rotor. In the circuit, the MOSFET is placed as the low-side switch in a half-bridge with a companion high-side MOSFET, driven by an Infineon 1EDN71 gate-driver IC. The topside-cooled TOLT package allows direct mounting to the pump housing or a finned heatsink, eliminating PCB bottom-side thermal vias.
Recommandé
Electric Vehicle HVAC E-Compressor
The IAUS260N10S5N019TATMA1 targets e-compressor inverters in EV HVAC systems because its 260 A continuous current rating and 1.9 mΩ Rds(on) handle the high-current three-phase inverter switching at 48 V with minimal thermal stress. The 300 W power dissipation capability at Tc supports the 100-200 A RMS inverter currents common in EV thermal-management compressors. The Infineon part is used as the low-frequency side of each half-bridge leg, paired with a complementary high-side MOSFET. The TOLT topside-cooled package is particularly valuable here because e-compressor enclosures have limited PCB area and require direct chassis heatsinking.
Recommandé
48V Electric Radiator Fan
The IAUS260N10S5N019TATMA1 is ideal for 48 V radiator fan drives because its 100 V rating handles the 48 V bus with transient margin, and its 1.9 mΩ Rds(on) keeps switching losses low during PWM speed-control operation (typical 4-25 kHz). The 260 A continuous current covers the inrush when the fan starts from stall, while steady-state fan currents of 30-80 A keep the MOSFET well within its SOA. The TOLT topside-cooled package enables the MOSFET to dissipate heat directly to the fan housing or a top-mounted heatsink. The automotive-grade IAUS prefix ensures qualification for under-hood thermal-management applications.
Recommandé
Industrial High-Current DC-DC Converter
The IAUS260N10S5N019TATMA1 fits industrial 48 V-to-low-voltage DC-DC converters (such as 48 V to 12 V or 48 V to 5 V buck stages) because its 100 V Vds rating handles the 48 V nominal input plus reflected-voltage transients from the inductor, and its 1.9 mΩ Rds(on) minimizes conduction loss at 100+ A output currents. The 300 W power dissipation rating supports continuous full-load operation when properly heatsinked. The TOLT package's topside cooling is advantageous in industrial chassis-mount supplies where bottom-side cooling is impractical. The part is used as the synchronous-rectifier MOSFET or main switching FET depending on topology.
Recommandé
48V Battery Management System (BMS)
The IAUS260N10S5N019TATMA1 serves in 48 V BMS disconnect and balancing circuits because its 100 V Vds rating handles the full battery-pack voltage with margin, and its 1.9 mΩ Rds(on) minimizes voltage drop across the protection MOSFET, preserving battery-pack measurement accuracy. The 260 A continuous current covers peak discharge currents in mild-hybrid 48 V systems. The Infineon MOSFET is used as the main pack-protection disconnect switch or as a high-current cell-balancing FET. The TOLT topside-cooled package enables compact BMS modules mounted near the battery pack.
Recommandé
Telecom 48V Synchronous Rectification
The IAUS260N10S5N019TATMA1 targets telecom 48 V synchronous-rectifier stages because its 100 V Vds rating provides margin over the 48 V telecom bus, and its 1.9 mΩ Rds(on) is among the lowest available for 100 V MOSFETs in a topside-cooled TOLT package, dramatically improving rectifier efficiency versus Schottky diodes. At full-load currents of 100-200 A common in telecom rectifiers, the 1.9 mΩ Rds(on) translates to conduction losses below 20 W per FET. The TOLT topside cooling allows the rectifier to be mounted flat against a chassis or cold-plate. The automotive-grade qualification provides additional reliability margin for 24/7 telecom operation.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IAUS260N10S5N019TATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IAUZ18N10S5L420ATMA1 | BSC076N04NDATMA1 | ISC015N06NM5ATMA1 | IQDH29NE2LM5CGSCATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-16-2 (TOLT) | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same |
| Drain-to-Source Voltage (Vds) | 100 V | 100 V | 40 V (-60%) | 60 V (-40%) | 40 V | 700 V |
| Rds(on) at 10V Vgs | 1.9 mΩ | ~4.2 mΩ | ~0.76 mΩ | ~1.5 mΩ | ~2.9 mΩ | ~20 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | CoolMOS |
| Automotive Qualified | Yes (IAUS prefix) | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Ultra-low 1.9 mΩ Rds(on) at 10 V Vgs (vs BSC076N04NDATMA1)
- Topside-cooled TOLT package for direct heatsink mounting (vs ISC015N06NM5ATMA1)
- 100 V Vds class with OptiMOS 5 efficiency (vs IGLR70R200D2SXUMA1)
Notes de conception
The PG-HDSOP-16-2 (TOLT) package requires a topside-mounted heatsink to achieve datasheet RthJC ratings. The top thermal pad is the primary thermal path; bottom-side PCB copper is secondary. Mount the heatsink with a defined torque (typically 0.5-1.0 N·m per screw) using thermal interface material (TIM) such as 0.1 mm thermal pad or thermal grease. Without topside cooling, the device cannot sustain the 260 A continuous rating. Estimated: at 150 A continuous, 1.9 mΩ Rds(on) gives conduction loss of approximately 43 W; without a proper heatsink, junction temperature will exceed 175 C and trigger thermal shutdown.
Minimize the gate-drive loop inductance by placing the gate-driver IC as close as possible to the MOSFET gate pin (pin 13). Use a Kelvin-source connection if available to separate the gate-drive return path from the main power-source path. Keep the power-source and drain traces short and wide (use 2 oz copper minimum). Place a 100 nF ceramic bypass capacitor directly between Vcc and ground of the gate driver to supply peak gate currents. The peak gate current for a MOSFET of this die size can exceed 5 A during fast switching transitions.
Do not exceed Vgs of ±20 V (absolute maximum); use a 12 V or 15 V gate-drive supply with proper gate-source clamping. Verify the SOA for pulsed operation - the 100 V rating assumes the device is within its pulsed-current capability at the operating duty cycle. For automotive 48 V systems, add a transient-voltage suppressor (TVS) across drain-source to clamp load-dump transients that can exceed 70 V. Ensure the gate-driver can source/sink sufficient peak current (typically 2-5 A) to fully enhance the MOSFET within the target switching time.
Informations de conformité
RoHS and REACH compliant per Infineon product page. Automotive-qualified per the IAUS prefix (AEC-Q101 expected; consult Infineon datasheet for full qualification details). Lead-free reflow-compatible per JEDEC J-STD-020.
