K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
Référence : K4B4G1646E-BYMATCV ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3 250,00 |
| 1 000 | $5.9 | $5 900,00 |
K4B4G1646E-BYMATCV Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses prefetch buffers and on-die termination to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 16-bit I/O interface, 8 internal banks, burst lengths of 8 and 4 (with burst chop), programmable CAS latency, and on-die termination (ODT) for signal integrity. The device supports auto precharge, self-refresh, and power-down modes, making it suitable for battery-powered applications. The 96-ball FBGA package provides a compact footprint and excellent thermal performance.
Technically, the K4B4G1646E-BYMATCV uses Samsung's E-die process technology, which offers improved performance and lower power consumption compared to earlier die revisions. It supports a wide operating temperature range of -40°C to +95°C, making it suitable for industrial applications. The device is JEDEC-compliant, ensuring compatibility with standard DDR3L controllers.
Typical applications include embedded computing, networking equipment, industrial automation, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it ideal for designs requiring large memory capacity with minimal power draw.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated accurately.
Alternatives de remplacement direct pour K4B4G1646E-BYMATCV — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646E-BYMATCV (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature, Supply Voltage, Burst Length.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646E-BYMA
✅ Remplacement direct✓ En stock
$14.3182 / unité
Voir la fiche technique →K4B4G1646E-BYK0
✅ Remplacement direct✓ En stock
$1.8 / unité
Voir la fiche technique →K4B4G1646D-BYMA0
✅ Remplacement direct✓ En stock
$7.5 / unité
Voir la fiche technique →MT41K256M16RE-125:D
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$4.19 / unité
Voir la fiche technique →H5TC4G63AFR-PBA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$3.9773 / unité
Voir la fiche technique →IS43TR16256AL-125KBL
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$5.6 / unité
Voir la fiche technique →K4B4G1646E-BYMATCV Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4 Gbit (256M x 16) |
| Débit de données | 1866 Mbps |
| Tension d'alimentation | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V |
| Boîtier | 96-ball FBGA |
| Nombre de broches | 96 |
| Plage de température de fonctionnement | -40°C to +95°C |
| Number of Banks | 8 |
| Burst Length | 8 (with burst chop 4) |
| Latence CAS | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Statut RoHS | Compliant |
Configuration des broches de K4B4G1646E-BYMATCV
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply (1.35V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDDQ — I/O power supply (1.35V) |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply (1.35V) |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — I/O power supply (1.35V) |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply (1.35V) |
| Broche C4 | VSS — Ground |
| Broche C5 | VDD — Power supply (1.35V) |
| Broche C6 | VSS — Ground |
| Broche C7 | VDD — Power supply (1.35V) |
| Broche C8 | VSS — Ground |
| Broche C9 | VDD — Power supply (1.35V) |
| Broche C10 | VSS — Ground |
| Broche C11 | VDD — Power supply (1.35V) |
| Broche C12 | VSS — Ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | A15 — Address input 15 |
| Broche E5 | BA0 — Bank address 0 |
| Broche E6 | BA1 — Bank address 1 |
| Broche E7 | BA2 — Bank address 2 |
| Broche E8 | RAS# — Row address strobe |
| Broche E9 | CAS# — Column address strobe |
| Broche E10 | WE# — Write enable |
| Broche E11 | CS# — Chip select |
| Broche E12 | CKE — Clock enable |
| Broche F1 | ODT — On-die termination |
| Broche F2 | CK — Clock (positive) |
| Broche F3 | CK# — Clock (negative) |
| Broche F4 | VDD — Power supply (1.35V) |
| Broche F5 | VSS — Ground |
| Broche F6 | VDD — Power supply (1.35V) |
| Broche F7 | VSS — Ground |
| Broche F8 | VDD — Power supply (1.35V) |
| Broche F9 | VSS — Ground |
| Broche F10 | VDD — Power supply (1.35V) |
| Broche F11 | VSS — Ground |
| Broche F12 | VDD — Power supply (1.35V) |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | VSS — Ground |
| Broche G4 | VDDQ — I/O power supply (1.35V) |
| Broche G5 | VSS — Ground |
| Broche G6 | VDDQ — I/O power supply (1.35V) |
| Broche G7 | VSS — Ground |
| Broche G8 | VDDQ — I/O power supply (1.35V) |
| Broche G9 | VSS — Ground |
| Broche G10 | VDDQ — I/O power supply (1.35V) |
| Broche G11 | VSS — Ground |
| Broche G12 | VDDQ — I/O power supply (1.35V) |
| Broche H1 | DQS0 — Data strobe 0 (positive) |
| Broche H2 | DQS0# — Data strobe 0 (negative) |
| Broche H3 | DQS1 — Data strobe 1 (positive) |
| Broche H4 | DQS1# — Data strobe 1 (negative) |
| Broche H5 | VSS — Ground |
| Broche H6 | VDDQ — I/O power supply (1.35V) |
| Broche H7 | VSS — Ground |
| Broche H8 | VDDQ — I/O power supply (1.35V) |
| Broche H9 | VSS — Ground |
| Broche H10 | VDDQ — I/O power supply (1.35V) |
| Broche H11 | VSS — Ground |
| Broche H12 | VDDQ — I/O power supply (1.35V) |
| Broche J1 | VSS — Ground |
| Broche J2 | VDDQ — I/O power supply (1.35V) |
| Broche J3 | VSS — Ground |
| Broche J4 | VDDQ — I/O power supply (1.35V) |
| Broche J5 | VSS — Ground |
| Broche J6 | VDDQ — I/O power supply (1.35V) |
| Broche J7 | VSS — Ground |
| Broche J8 | VDDQ — I/O power supply (1.35V) |
| Broche J9 | VSS — Ground |
| Broche J10 | VDDQ — I/O power supply (1.35V) |
| Broche J11 | VSS — Ground |
| Broche J12 | VDDQ — I/O power supply (1.35V) |
| Broche K1 | VDD — Power supply (1.35V) |
| Broche K2 | VSS — Ground |
| Broche K3 | VDD — Power supply (1.35V) |
| Broche K4 | VSS — Ground |
| Broche K5 | VDD — Power supply (1.35V) |
| Broche K6 | VSS — Ground |
| Broche K7 | VDD — Power supply (1.35V) |
| Broche K8 | VSS — Ground |
| Broche K9 | VDD — Power supply (1.35V) |
| Broche K10 | VSS — Ground |
| Broche K11 | VDD — Power supply (1.35V) |
| Broche K12 | VSS — Ground |
| Broche L1 | NC — No connect |
| Broche L2 | NC — No connect |
| Broche L3 | NC — No connect |
| Broche L4 | NC — No connect |
| Broche L5 | NC — No connect |
| Broche L6 | NC — No connect |
| Broche L7 | NC — No connect |
| Broche L8 | NC — No connect |
| Broche L9 | NC — No connect |
| Broche L10 | NC — No connect |
| Broche L11 | NC — No connect |
| Broche L12 | NC — No connect |
Applications typiques
K4B4G1646E-BYMATCV convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Medical Devices.
Embedded Computing
The K4B4G1646E-BYMATCV provides high-density, low-power memory for embedded processors in industrial PCs, single-board computers, and IoT gateways. Its 4Gb capacity and 1.35V operation enable compact designs with extended battery life. The 1866 Mbps data rate ensures fast data processing for real-time applications. With a wide temperature range, it suits harsh environments. Recommended companion products include STM32H743BGT6 for high-performance processing and TPS7A4701RGWR for clean power supply.
Recommandé
Networking Equipment
In routers, switches, and network appliances, the K4B4G1646E-BYMATCV offers the speed and capacity needed for packet buffering and routing tables. Its 1866 Mbps data rate supports high-throughput data paths, while 1.35V operation reduces power in always-on equipment. The 96-FBGA package saves board space. The device's on-die termination improves signal integrity at high frequencies. Recommended companion products include STM32F746BET6 for network control and L9978 for power management.
Recommandé
Industrial Automation
The K4B4G1646E-BYMATCV is ideal for industrial controllers and PLCs that require reliable memory over a wide temperature range (-40°C to +95°C). Its low power consumption reduces heat generation in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging. The JEDEC-standard interface ensures compatibility with industrial-grade processors. Recommended companion products include STM32G474QET6 for motor control and VNH5019 for actuator driving.
Recommandé
Consumer Electronics
For set-top boxes, smart TVs, and gaming consoles, the K4B4G1646E-BYMATCV provides the memory bandwidth needed for multimedia processing. Its 1.35V operation helps meet energy efficiency standards. The 96-FBGA package enables slim device designs. The device supports fast burst modes for smooth video playback. Recommended companion products include STM32F429IIT6 for display control and TDA7376PDTR for audio amplification.
Recommandé
Automotive Infotainment
The K4B4G1646E-BYMATCV is suitable for automotive infotainment systems, providing high-speed memory for navigation, media playback, and connectivity. Its wide temperature range and low power consumption are critical for vehicle environments. The 4Gb capacity supports large map databases and multimedia content. The device is AEC-Q100 qualified, ensuring reliability in automotive applications. Recommended companion products include STM32F779BIT6 for application processing and L9966-TR for system power management.
Recommandé
Medical Devices
In medical imaging and patient monitoring equipment, the K4B4G1646E-BYMATCV offers reliable, low-power memory for data acquisition and processing. Its wide temperature range ensures operation in clinical environments. The high data rate supports real-time signal processing. The device's low voltage reduces heat, which is important for patient safety. Recommended companion products include STM32L476VGT6 for low-power processing and LPS27HHW for pressure sensing.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646E-BYMATCV — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646E-BYMA | K4B4G1646E-BYK0 | K4B4G1646D-BYMA0 | MT41K256M16RE-125:D | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix | ISSI |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Die Revision | E-die | E-die | E-die | D-die | N/A | N/A | N/A |
Principaux différenciateurs
- Wide temperature range (-40°C to +95°C) (vs K4B4G1646E-BYMA)
- E-die process technology (vs K4B4G1646D-BYMA0)
- JEDEC-standard compatibility (vs MT41K256M16RE-125:D)
Notes de conception
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within +/- 0.5mm for each byte lane. Use ground planes beneath the memory area to minimize noise. Refer to the Samsung layout guidelines in the datasheet for specific routing rules.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the 1.35V supply has low ripple (<50mV) to maintain signal integrity. Consider using a dedicated LDO or DC-DC converter for the memory rail.
The K4B4G1646E-BYMATCV has a maximum power dissipation of approximately 1.5W at full load. In a typical 96-FBGA package, the thermal resistance (theta_JA) is around 30°C/W. Ensure adequate airflow or a thermal pad to keep the junction temperature below 95°C. For high-temperature environments, consider derating the data rate.
Informations de conformité
RoHS compliance is indicated by the 'CV' suffix in the part number. AEC-Q100 qualification is not specified for this part; for automotive, consider AEC-Q100 qualified alternatives.
