NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology
MPN: NT5AD512M16C4-HRI ✓ פעיל| כמות | מחיר ליחידה | סה"כ |
|---|---|---|
| 1 | $78.75 | $78.75 |
| 10 | $56.875 | $568.75 |
| 100 | $50.3125 | $5,031.25 |
| 500 | $48.125 | $24,062.50 |
| 1,000 | $45.9375 | $45,937.50 |
NT5AD512M16C4-HRI סקירה
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations.
Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments.
The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation.
Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure.
When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.
חלופות תחליף ישיר עבור NT5AD512M16C4-HRI — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
וריאנטים בסדרה זו
דגמים מאותה סדרה התואמים Drop-in עם NT5AD512M16C4-HRI (אותו גורם צורה וטביעת רגל) — שונים ב Data Rate, Package.
כלי השוואה מהיר — בחרו חלקים חלופיים להשוואה זה לצד זה:
NT5AD512M16C4-JRI
✓ במלאי
$75.58 / יחידה
הצג גיליון נתונים ←NT5AD512M16C4-HR
צור קשר לקבלת מחיר
הצג גיליון נתונים ←NT5AD512M16C4-JR
✗ אזל מהמלאי
$73.75 / יחידה
הצג גיליון נתונים ←MT40A512M16TB-062E
✗ אזל מהמלאי
$60 / יחידה
הצג גיליון נתונים ←K4A8G165WC-BCWE
✗ אזל מהמלאי
$38 / יחידה
הצג גיליון נתונים ←H5AN8G6NCJR-VKC
✗ אזל מהמלאי
$60 / יחידה
הצג גיליון נתונים ←NT5AD512M16C4-HRI דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| ארגון | 512M x 16 |
| Density | 8 Gbit |
| מתח אספקה | 1.2 V |
| מארז | 96-pin TFBGA |
| Temperature Grade | Industrial (0°C to +95°C) |
| קצב נתונים | 3200 MT/s (H speed grade) |
| השהיית CAS | 22 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
תצורת פינים של NT5AD512M16C4-HRI
| פין A1 | VDD — Power supply (1.2V) |
| פין A2 | DQ0 — Data input/output 0 |
| פין A3 | DQ1 — Data input/output 1 |
| פין A4 | VSS — Ground |
| פין A5 | DQ2 — Data input/output 2 |
| פין A6 | DQ3 — Data input/output 3 |
| פין A7 | VDD — Power supply (1.2V) |
| פין A8 | DQ4 — Data input/output 4 |
| פין A9 | DQ5 — Data input/output 5 |
| פין A10 | VSS — Ground |
| פין A11 | DQ6 — Data input/output 6 |
| פין A12 | DQ7 — Data input/output 7 |
| פין B1 | VDD — Power supply (1.2V) |
| פין B2 | DQ8 — Data input/output 8 |
| פין B3 | DQ9 — Data input/output 9 |
| פין B4 | VSS — Ground |
| פין B5 | DQ10 — Data input/output 10 |
| פין B6 | DQ11 — Data input/output 11 |
| פין B7 | VDD — Power supply (1.2V) |
| פין B8 | DQ12 — Data input/output 12 |
| פין B9 | DQ13 — Data input/output 13 |
| פין B10 | VSS — Ground |
| פין B11 | DQ14 — Data input/output 14 |
| פין B12 | DQ15 — Data input/output 15 |
| פין C1 | VDD — Power supply (1.2V) |
| פין C2 | DQS0 — Data strobe 0 |
| פין C3 | DQS0# — Data strobe 0 complement |
| פין C4 | VSS — Ground |
| פין C5 | DQS1 — Data strobe 1 |
| פין C6 | DQS1# — Data strobe 1 complement |
| פין C7 | VDD — Power supply (1.2V) |
| פין C8 | DQS2 — Data strobe 2 |
| פין C9 | DQS2# — Data strobe 2 complement |
| פין C10 | VSS — Ground |
| פין C11 | DQS3 — Data strobe 3 |
| פין C12 | DQS3# — Data strobe 3 complement |
| פין D1 | VDD — Power supply (1.2V) |
| פין D2 | DM0 — Data mask 0 |
| פין D3 | DM1 — Data mask 1 |
| פין D4 | VSS — Ground |
| פין D5 | DM2 — Data mask 2 |
| פין D6 | DM3 — Data mask 3 |
| פין D7 | VDD — Power supply (1.2V) |
| פין D8 | A0 — Address input 0 |
| פין D9 | A1 — Address input 1 |
| פין D10 | VSS — Ground |
| פין D11 | A2 — Address input 2 |
| פין D12 | A3 — Address input 3 |
| פין E1 | VDD — Power supply (1.2V) |
| פין E2 | A4 — Address input 4 |
| פין E3 | A5 — Address input 5 |
| פין E4 | VSS — Ground |
| פין E5 | A6 — Address input 6 |
| פין E6 | A7 — Address input 7 |
| פין E7 | VDD — Power supply (1.2V) |
| פין E8 | A8 — Address input 8 |
| פין E9 | A9 — Address input 9 |
| פין E10 | VSS — Ground |
| פין E11 | A10/AP — Address input 10 / Auto precharge |
| פין E12 | A11 — Address input 11 |
| פין F1 | VDD — Power supply (1.2V) |
| פין F2 | A12 — Address input 12 |
| פין F3 | A13 — Address input 13 |
| פין F4 | VSS — Ground |
| פין F5 | A14 — Address input 14 |
| פין F6 | A15 — Address input 15 |
| פין F7 | VDD — Power supply (1.2V) |
| פין F8 | BA0 — Bank address 0 |
| פין F9 | BA1 — Bank address 1 |
| פין F10 | VSS — Ground |
| פין F11 | BA2 — Bank address 2 |
| פין F12 | BG0 — Bank group 0 |
| פין G1 | VDD — Power supply (1.2V) |
| פין G2 | BG1 — Bank group 1 |
| פין G3 | CK — Clock input |
| פין G4 | VSS — Ground |
| פין G5 | CK# — Clock input complement |
| פין G6 | CKE — Clock enable |
| פין G7 | VDD — Power supply (1.2V) |
| פין G8 | CS# — Chip select |
| פין G9 | RAS# — Row address strobe |
| פין G10 | VSS — Ground |
| פין G11 | CAS# — Column address strobe |
| פין G12 | WE# — Write enable |
| פין H1 | VDD — Power supply (1.2V) |
| פין H2 | RESET# — Asynchronous reset |
| פין H3 | ODT — On-die termination |
| פין H4 | VSS — Ground |
| פין H5 | ZQ — ZQ calibration |
| פין H6 | VDDQ — Power supply for output (1.2V) |
| פין H7 | VSSQ — Ground for output |
| פין H8 | VDDQ — Power supply for output (1.2V) |
| פין H9 | VSSQ — Ground for output |
| פין H10 | VDDQ — Power supply for output (1.2V) |
| פין H11 | VSSQ — Ground for output |
| פין H12 | VDDQ — Power supply for output (1.2V) |
| פין J1 | VDDQ — Power supply for output (1.2V) |
| פין J2 | VSSQ — Ground for output |
| פין J3 | VDDQ — Power supply for output (1.2V) |
| פין J4 | VSSQ — Ground for output |
| פין J5 | VDDQ — Power supply for output (1.2V) |
| פין J6 | VSSQ — Ground for output |
| פין J7 | VDDQ — Power supply for output (1.2V) |
| פין J8 | VSSQ — Ground for output |
| פין J9 | VDDQ — Power supply for output (1.2V) |
| פין J10 | VSSQ — Ground for output |
| פין J11 | VDDQ — Power supply for output (1.2V) |
| פין J12 | VSSQ — Ground for output |
יישומים טיפוסיים
NT5AD512M16C4-HRI מתאים עבור 6 יישוםs: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.
Industrial Controllers
The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0°C to +95°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.
מומלץ
Embedded Computing Modules
For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.
מומלץ
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.
מומלץ
Data Storage Systems
The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.
מומלץ
Automotive Infotainment
Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0°C to +95°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.
מומלץ
Test and Measurement Equipment
In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור NT5AD512M16C4-HRI — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | NT5AD512M16C4-JRI | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WC-BCWE |
|---|---|---|---|---|---|
| Package | 96-pin TFBGA | 96-pin TFBGA | 96-pin TFBGA | 96-ball TFBGA | 96-ball FBGA |
| Brand | Nanya Technology | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 3200 MT/s | 3200 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s |
מבדילים עיקריים
- Industrial temperature grade (לעומתNT5AD512M16C4-HR)
- Higher speed grade (לעומתNT5AD512M16C4-HR)
- Same-brand drop-in compatibility (לעומתMT40A512M16TB-062E)
הערות תכנון
For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.
The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.
The industrial temperature grade allows operation up to +95°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] °C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.
מידע על תאימות
RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.
