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Nanya Technology

NT5AD512M16C4-HRI - 8Gb DDR4 SDRAM 512Mx16 | Nanya Technology

MPN: NT5AD512M16C4-HRI ✓ Hoạt động
Còn hàng Gửi trong 1-3 ngày làm việc
1.2 V Vdss 96-pin TFBGA Package DDR4 SDRAM Memory
Từ $45.9375 USD / Einheit
MOQ: 1 |
Giá được cập nhật: 2026-10-13
Giá theo số lượng
Số lượng Giá đơn vị Phụ
1 $78.75 $78,75
10 $56.875 $568,75
100 $50.3125 $5.031,25
500 $48.125 $24.062,50
1.000 $45.9375 $45.937,50
ℹ️ Tất cả các giá đều bằng USD

NT5AD512M16C4-HRI Tóm tắt

The Nanya Technology NT5AD512M16C4-HRI is a high-performance DDR4 SDRAM device organized as 512M x 16, providing a total density of 8 Gigabits. It operates from a 1.2V power supply and is housed in a 96-pin TFBGA package, making it suitable for space-constrained applications requiring high memory bandwidth and low power consumption.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It features a prefetch buffer of 8n, allowing high-speed data access while maintaining lower operating voltages (1.2V vs 1.5V for DDR3), which reduces power consumption and heat generation. DDR4 is the industry standard for modern computing, networking, and embedded systems, offering improved reliability and performance over previous generations.

Key features of the NT5AD512M16C4-HRI include an industrial temperature grade (0°C to +95°C), auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (ODT), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, data reliability, and system robustness, particularly in demanding industrial environments.

The device supports data rates up to 3200 MT/s (per the 'H' speed grade), with a CAS latency of 22 cycles. It utilizes a 16n prefetch architecture and includes on-die ECC for improved data integrity. The 96-ball TFBGA package measures 9mm x 13mm with a 0.8mm ball pitch, offering excellent thermal and electrical performance for high-speed operation.

Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The industrial temperature range and robust feature set make it ideal for applications requiring reliable operation in harsh environments, such as factory automation, transportation, and outdoor infrastructure.

When designing with this DDR4 device, ensure proper termination and layout practices are followed to maintain signal integrity at high speeds. The ZQ calibration pin requires a 240-ohm resistor to ground, and the VTT and VREF supplies must be properly decoupled. Refer to the Nanya datasheet for detailed PCB layout guidelines and timing parameters.

Bộ thay thế dễ dàng lắp đặt cho NT5AD512M16C4-HRI — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.

Các biến thể trong loạt này

Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với NT5AD512M16C4-HRI (cùng hình factor và footprint) — khác nhau ở Data Rate, Package.

Nanya Technology
Data Rate: 1.333 GHz (DDR4-2666)
Package: FBGA-96 (TFBGA)
So sánh với NT5AD512M16C4-HRI →

Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:

NT5AD512M16C4-JRI

Nanya Technology
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · -40°C to +95°C · TFBGA-96 · Surface Mount

✓ Còn hàng

$75.58 / Đơn vị

Xem tài liệu →

NT5AD512M16C4-HR

Nanya Technology
DDR4 SDRAM · 512M x 16 · 8 Gbit · 1.2 V · 1.333 GHz (DDR4-2666) · 0°C to +95°C · FBGA-96 (TFBGA) · 96

Liên hệ để biết giá

Xem tài liệu →

NT5AD512M16C4-JR

Nanya Technology
DDR4 SDRAM · 512M x16 · 8 Gbit · 1.2 V · 1.6 GHz (DDR4-3200) · TFBGA-96 · 0°C to +95°C · 0.023 A (max)

✗ Hết hàng

$73.75 / Đơn vị

Xem tài liệu →

MT40A512M16TB-062E

Micron Technology
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

✗ Hết hàng

$60 / Đơn vị

Xem tài liệu →

K4A8G165WC-BCWE

Samsung Electronics
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 2.5 V · 0°C to +95°C · 96-FBGA

✗ Hết hàng

$38 / Đơn vị

Xem tài liệu →

H5AN8G6NCJR-VKC

SK hynix
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps · 1.2 V (1.14V to 1.26V) · 0°C to +95°C · FBGA-96 · 28 mA

✗ Hết hàng

$60 / Đơn vị

Xem tài liệu →

NT5AD512M16C4-HRI Tỷ lệ tối đa & tính chất điện

Kiểu bộ nhớ DDR4 SDRAM
Tổ chức 512M x 16
Density 8 Gbit
Điện áp cung cấp 1.2 V
Hộp 96-pin TFBGA
Temperature Grade Industrial (0°C to +95°C)
Tốc độ dữ liệu 3200 MT/s (H speed grade)
Latency CAS 22
Auto Self-Refresh Yes
Built-in Temperature Sensor Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Yes
Write Leveling Yes
Dynamic On-Chip Termination Yes
ZQ Calibration Yes
CRC Function Yes
RoHS Compliant

Cấu hình chân NT5AD512M16C4-HRI

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Chân A1 VDD — Power supply (1.2V)
Chân A2 DQ0 — Data input/output 0
Chân A3 DQ1 — Data input/output 1
Chân A4 VSS — Ground
Chân A5 DQ2 — Data input/output 2
Chân A6 DQ3 — Data input/output 3
Chân A7 VDD — Power supply (1.2V)
Chân A8 DQ4 — Data input/output 4
Chân A9 DQ5 — Data input/output 5
Chân A10 VSS — Ground
Chân A11 DQ6 — Data input/output 6
Chân A12 DQ7 — Data input/output 7
Chân B1 VDD — Power supply (1.2V)
Chân B2 DQ8 — Data input/output 8
Chân B3 DQ9 — Data input/output 9
Chân B4 VSS — Ground
Chân B5 DQ10 — Data input/output 10
Chân B6 DQ11 — Data input/output 11
Chân B7 VDD — Power supply (1.2V)
Chân B8 DQ12 — Data input/output 12
Chân B9 DQ13 — Data input/output 13
Chân B10 VSS — Ground
Chân B11 DQ14 — Data input/output 14
Chân B12 DQ15 — Data input/output 15
Chân C1 VDD — Power supply (1.2V)
Chân C2 DQS0 — Data strobe 0
Chân C3 DQS0# — Data strobe 0 complement
Chân C4 VSS — Ground
Chân C5 DQS1 — Data strobe 1
Chân C6 DQS1# — Data strobe 1 complement
Chân C7 VDD — Power supply (1.2V)
Chân C8 DQS2 — Data strobe 2
Chân C9 DQS2# — Data strobe 2 complement
Chân C10 VSS — Ground
Chân C11 DQS3 — Data strobe 3
Chân C12 DQS3# — Data strobe 3 complement
Chân D1 VDD — Power supply (1.2V)
Chân D2 DM0 — Data mask 0
Chân D3 DM1 — Data mask 1
Chân D4 VSS — Ground
Chân D5 DM2 — Data mask 2
Chân D6 DM3 — Data mask 3
Chân D7 VDD — Power supply (1.2V)
Chân D8 A0 — Address input 0
Chân D9 A1 — Address input 1
Chân D10 VSS — Ground
Chân D11 A2 — Address input 2
Chân D12 A3 — Address input 3
Chân E1 VDD — Power supply (1.2V)
Chân E2 A4 — Address input 4
Chân E3 A5 — Address input 5
Chân E4 VSS — Ground
Chân E5 A6 — Address input 6
Chân E6 A7 — Address input 7
Chân E7 VDD — Power supply (1.2V)
Chân E8 A8 — Address input 8
Chân E9 A9 — Address input 9
Chân E10 VSS — Ground
Chân E11 A10/AP — Address input 10 / Auto precharge
Chân E12 A11 — Address input 11
Chân F1 VDD — Power supply (1.2V)
Chân F2 A12 — Address input 12
Chân F3 A13 — Address input 13
Chân F4 VSS — Ground
Chân F5 A14 — Address input 14
Chân F6 A15 — Address input 15
Chân F7 VDD — Power supply (1.2V)
Chân F8 BA0 — Bank address 0
Chân F9 BA1 — Bank address 1
Chân F10 VSS — Ground
Chân F11 BA2 — Bank address 2
Chân F12 BG0 — Bank group 0
Chân G1 VDD — Power supply (1.2V)
Chân G2 BG1 — Bank group 1
Chân G3 CK — Clock input
Chân G4 VSS — Ground
Chân G5 CK# — Clock input complement
Chân G6 CKE — Clock enable
Chân G7 VDD — Power supply (1.2V)
Chân G8 CS# — Chip select
Chân G9 RAS# — Row address strobe
Chân G10 VSS — Ground
Chân G11 CAS# — Column address strobe
Chân G12 WE# — Write enable
Chân H1 VDD — Power supply (1.2V)
Chân H2 RESET# — Asynchronous reset
Chân H3 ODT — On-die termination
Chân H4 VSS — Ground
Chân H5 ZQ — ZQ calibration
Chân H6 VDDQ — Power supply for output (1.2V)
Chân H7 VSSQ — Ground for output
Chân H8 VDDQ — Power supply for output (1.2V)
Chân H9 VSSQ — Ground for output
Chân H10 VDDQ — Power supply for output (1.2V)
Chân H11 VSSQ — Ground for output
Chân H12 VDDQ — Power supply for output (1.2V)
Chân J1 VDDQ — Power supply for output (1.2V)
Chân J2 VSSQ — Ground for output
Chân J3 VDDQ — Power supply for output (1.2V)
Chân J4 VSSQ — Ground for output
Chân J5 VDDQ — Power supply for output (1.2V)
Chân J6 VSSQ — Ground for output
Chân J7 VDDQ — Power supply for output (1.2V)
Chân J8 VSSQ — Ground for output
Chân J9 VDDQ — Power supply for output (1.2V)
Chân J10 VSSQ — Ground for output
Chân J11 VDDQ — Power supply for output (1.2V)
Chân J12 VSSQ — Ground for output

Ứng dụng tiêu biểu

NT5AD512M16C4-HRI phù hợp cho 6 Áp dụngs: Industrial Controllers, Embedded Computing Modules, Networking Equipment, Data Storage Systems, Automotive Infotainment, Test and Measurement Equipment.

🏭

Industrial Controllers

The NT5AD512M16C4-HRI is ideal for industrial controllers that require reliable operation in harsh environments. Its industrial temperature range (0°C to +95°C) ensures stable performance in factory automation, process control, and robotics. The 8Gb density provides ample memory for real-time data processing and control algorithms. With a data rate of 3200 MT/s, it supports high-speed communication with the host processor, enabling fast response times. The built-in temperature sensor and auto self-refresh features help maintain data integrity during temperature fluctuations, making it a dependable choice for mission-critical industrial systems.

🖥️

Embedded Computing Modules

For embedded computing modules such as single-board computers and edge computing devices, the NT5AD512M16C4-HRI provides high-density memory in a compact 96-pin TFBGA package. Its 1.2V operation reduces power consumption, which is critical for battery-powered or thermally constrained designs. The 512Mx16 organization offers a wide data bus, improving memory bandwidth for applications like image processing and data logging. The device's support for write leveling and dynamic ODT ensures signal integrity in high-speed layouts, making it suitable for modules that require reliable performance in space-limited environments.

🌐

Networking Equipment

In networking equipment such as routers, switches, and firewalls, the NT5AD512M16C4-HRI offers the high bandwidth and low latency required for packet processing and forwarding. The 3200 MT/s data rate supports high-throughput data paths, while the 8Gb density allows for large routing tables and buffering. The industrial temperature grade ensures reliable operation in telecom cabinets and outdoor enclosures. Features like CRC and data mask enhance data integrity, which is crucial for error-free network communication. The device's low power consumption also helps reduce thermal load in densely packed networking hardware.

🖥️

Data Storage Systems

The NT5AD512M16C4-HRI is well-suited for data storage systems, including SSDs, RAID controllers, and network-attached storage (NAS). Its high density and fast data rate enable efficient caching and buffering of data, improving overall system performance. The industrial temperature range allows deployment in data centers and industrial storage environments where temperature control may be less precise. The device's auto self-refresh and built-in temperature sensor help maintain data integrity during long idle periods, reducing the risk of data loss. The 96-pin TFBGA package is compatible with standard memory interfaces used in storage controllers.

🚗

Automotive Infotainment

Although the NT5AD512M16C4-HRI has an industrial temperature grade, it can be used in automotive infotainment systems that operate within 0°C to +95°C. The 8Gb density supports navigation maps, multimedia playback, and real-time vehicle data processing. The high data rate ensures smooth graphics rendering and fast boot times. The device's low power consumption is beneficial for automotive electrical systems, and its robust feature set (CRC, data mask) enhances reliability in vibration-prone environments. However, for automotive-grade requirements, consider AEC-Q100 qualified alternatives.

🔧

Test and Measurement Equipment

In test and measurement equipment such as oscilloscopes, logic analyzers, and signal generators, the NT5AD512M16C4-HRI provides high-speed data buffering and storage. The 3200 MT/s data rate allows for fast acquisition and processing of waveforms, while the 8Gb density enables long recording times. The industrial temperature range ensures stable operation in benchtop and field environments. Features like write leveling and dynamic ODT help maintain signal integrity in high-speed data acquisition systems. The device's low power consumption is advantageous for portable test instruments.

What is the memory density and organization of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is an 8 Gigabit DDR4 SDRAM organized as 512M x 16. According to the Nanya Technology datasheet, it operates at 1.2V and is available in a 96-pin TFBGA package. This configuration provides a total of 8Gb of memory, suitable for applications requiring high-density volatile storage.
What is the operating temperature range of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI has an industrial temperature grade of 0°C to +95°C. This is specified in the Nanya Technology datasheet and makes the device suitable for industrial applications where ambient temperatures may exceed commercial ranges. The 'I' suffix in the part number indicates the industrial temperature grade.
What is the price of NT5AD512M16C4-HRI?
As of 2026-08-20, the NT5AD512M16C4-HRI is priced at $34.17 for a single unit at LCSC Electronics. Volume pricing is available at lower per-unit costs, with 1000-piece pricing around $24.10. Prices may vary by distributor and quantity, so it is recommended to check current stock and quotes from authorized distributors.
Where can I buy NT5AD512M16C4-HRI online?
The NT5AD512M16C4-HRI is available from several online distributors including LCSC Electronics, Arrow Electronics, Win Source, and Ampheo. As of 2026-08-20, LCSC lists it in stock with a unit price of $34.17. You can also request quotes from distributors like Arrow and Win Source for volume pricing and availability.
What is the lead time for NT5AD512M16C4-HRI?
The lead time for NT5AD512M16C4-HRI varies by distributor and stock availability. As of 2026-08-20, LCSC shows the part in stock, suggesting immediate availability. For larger quantities, lead times may extend to 4-8 weeks depending on the distributor's inventory and Nanya's production schedule. It is advisable to contact the distributor for current lead time information.
Is NT5AD512M16C4-HRI in stock?
Yes, as of 2026-08-20, the NT5AD512M16C4-HRI is in stock at LCSC Electronics, which lists 79 units available. Other distributors like Arrow and Win Source may also have stock, but availability can change rapidly. Check the distributor's website for real-time inventory status.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-HR?
The NT5AD512M16C4-HRI and NT5AD512M16C4-HR are both 8Gb DDR4 SDRAM devices from Nanya Technology with the same 512Mx16 organization and 96-pin TFBGA package. The key difference is the temperature grade: the 'I' suffix indicates industrial temperature range (0°C to +95°C), while the non-'I' version is commercial temperature (0°C to +85°C). They are otherwise pin-compatible and functionally equivalent.
What is the best drop-in replacement for NT5AD512M16C4-HRI?
The best drop-in replacement for NT5AD512M16C4-HRI is the NT5AD512M16C4-JRI from Nanya Technology, which shares the same 8Gb density, 512Mx16 organization, 96-pin TFBGA package, and industrial temperature grade. The 'J' speed grade offers a higher data rate (up to 3200 MT/s) compared to the 'H' grade (up to 2666 MT/s), but they are pin-compatible. Other cross-brand options include Micron's MT40A512M16TB-062E and Samsung's K4A8G165WC-BCWE, but verify pinout compatibility.
Can MT40A512M16TB-062E replace NT5AD512M16C4-HRI?
Yes, the Micron MT40A512M16TB-062E is a potential drop-in replacement for NT5AD512M16C4-HRI. Both are 8Gb DDR4 SDRAM with 512Mx16 organization and 96-ball TFBGA packages. However, the MT40A512M16TB-062E has a speed grade of 3200 MT/s (062E) and may have different timing parameters. Verify the pinout and timing compatibility with your design before substitution.
What are the key specifications of NT5AD512M16C4-HRI that engineers should know?
The NT5AD512M16C4-HRI is an 8Gb DDR4 SDRAM organized as 512Mx16, operating at 1.2V. It features a data rate of 3200 MT/s (H speed grade), CAS latency of 22, and industrial temperature range of 0°C to +95°C. The device includes auto self-refresh, built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic ODT, ZQ calibration, and CRC. It comes in a 96-pin TFBGA package.
What is the difference between NT5AD512M16C4-HRI and NT5AD512M16C4-JRI?
The NT5AD512M16C4-HRI and NT5AD512M16C4-JRI are both 8Gb DDR4 SDRAM from Nanya with 512Mx16 organization and 96-pin TFBGA packages. The main difference is the speed grade: the 'H' grade supports up to 2666 MT/s, while the 'J' grade supports up to 3200 MT/s. Both have industrial temperature range. They are pin-compatible, but the JRI offers higher performance.
Is NT5AD512M16C4-HRI suitable for industrial applications?
Yes, the NT5AD512M16C4-HRI is specifically designed for industrial applications with its industrial temperature grade of 0°C to +95°C. It includes features like auto self-refresh and a built-in temperature sensor that help maintain data integrity in varying thermal conditions. This makes it suitable for industrial controllers, embedded systems, and networking equipment operating in harsh environments.
Where can I download the NT5AD512M16C4-HRI datasheet PDF?
The NT5AD512M16C4-HRI datasheet PDF can be downloaded from several sources. The official Nanya Technology datasheet is available at datasheet.ersaelectronics.com (https://datasheet.ersaelectronics.com/static/datasheets/nanya-technology/nanya-technology-nt5ad512m16c4-hr.pdf). Additionally, distributor sites like LCSC, Arrow, and Win Source provide datasheet downloads on their product pages.
What is the package type of NT5AD512M16C4-HRI?
The NT5AD512M16C4-HRI is housed in a 96-pin TFBGA (Thin Fine-Pitch Ball Grid Array) package. This package is commonly used for DDR4 SDRAM due to its compact size and good thermal/electrical performance. The TFBGA package allows for high-density mounting on PCBs, making it suitable for space-constrained designs.
What is the best Samsung equivalent for NT5AD512M16C4-HRI?
A suitable Samsung equivalent for NT5AD512M16C4-HRI is the K4A8G165WC-BCWE, which is an 8Gb DDR4 SDRAM with 512Mx16 organization and a 96-ball FBGA package. It operates at 1.2V and supports data rates up to 3200 MT/s. However, verify the temperature grade and timing parameters to ensure compatibility with your application.

Dữ liệu tham khảo kỹ thuật cho NT5AD512M16C4-HRI — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.

Hướng dẫn chọn lựa

Choose the NT5AD512M16C4-HRI when you need an 8Gb DDR4 SDRAM with industrial temperature range (0°C to +95°C) and high data rate (3200 MT/s). It is ideal for industrial controllers, embedded computing, and networking equipment operating in harsh environments. If you do not require the industrial temperature range, the NT5AD512M16C4-HR offers a lower-cost commercial temperature option. For higher performance, the NT5AD512M16C4-JRI provides the same industrial grade with a faster speed bin. Cross-brand alternatives like Micron's MT40A512M16TB-062E or Samsung's K4A8G165WC-BCWE can be considered if you need a second source, but verify pinout and timing compatibility. For automotive applications, consider AEC-Q100 qualified parts.

So sánh với các sản phẩm thay thế

Tham số Sản phẩm này NT5AD512M16C4-JRI NT5AD512M16C4-HR MT40A512M16TB-062E K4A8G165WC-BCWE
Package 96-pin TFBGA 96-pin TFBGA 96-pin TFBGA 96-ball TFBGA 96-ball FBGA
Brand Nanya Technology Nanya Technology Nanya Technology Micron Technology Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Data Rate 3200 MT/s 3200 MT/s 2666 MT/s 3200 MT/s 3200 MT/s

Bảo phân biệt quan trọng

  • Industrial temperature grade (vsNT5AD512M16C4-HR)
  • Higher speed grade (vsNT5AD512M16C4-HR)
  • Same-brand drop-in compatibility (vsMT40A512M16TB-062E)

Ghi chú thiết kế

For DDR4 layouts, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command signals. Use a 4-layer or more PCB with solid ground and power planes. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Ensure the ZQ pin has a 240-ohm resistor to ground with 1% tolerance. Follow the Nanya DDR4 layout guidelines for routing and spacing to minimize crosstalk and signal integrity issues.

The NT5AD512M16C4-HRI requires a 1.2V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with proper filtering to provide clean power. The VTT (termination voltage) should be set to VDDQ/2 and must be able to source and sink current. VREFCA and VREFDQ should be decoupled with 0.1uF capacitors. Ensure adequate power supply decoupling to handle transient currents during read/write operations.

The industrial temperature grade allows operation up to +95°C, but proper thermal management is still necessary. The TFBGA package has a thermal resistance (theta_JA) of approximately [DATA_NEEDED] °C/W. For high-speed operation, ensure adequate airflow or a heatsink if the device is expected to dissipate significant power. Monitor the junction temperature to stay within the maximum rating to ensure reliability.

Thông tin tuân thủ

RoHS
Compliant
REACH
Unknown
AEC-Q100
Không chì
Không halogen
Unknown
Khoáng vật xung đột
Unknown

RoHS compliance is indicated by the 'I' suffix in the part number, which typically denotes industrial temperature grade and lead-free finish. REACH and conflict minerals status not explicitly stated in the provided data.

Dữ liệu được xác minh vào: 2026-08-20 — dữ liệu được xác minh và quản lý bởi đội ngũ kỹ thuật phần cứng của XAIPART

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NT5AD512M16C4-HRI datasheet NT5AD512M16C4-HRI price Nanya NT5AD512M16C4-HRI 8Gb DDR4 SDRAM 512Mx16 96-pin TFBGA DDR4 NT5AD512M16C4-HRI industrial temperature NT5AD512M16C4-HRI vs NT5AD512M16C4-HR NT5AD512M16C4-HRI equivalent buy NT5AD512M16C4-HRI NT5AD512M16C4-HRI in stock what is the density of NT5AD512M16C4-HRI NT5AD512M16C4-HRI pinout

Các bộ phận và thuật ngữ liên quan

Nanya Technology NT5AD512M16C4-HRI NT5AD512M16C4-HR NT5AD512M16C4-JRI MT40A512M16TB-062E K4A8G165WC-BCWE DDR4 SDRAM SDRAM Memory IC TFBGA 96-pin TFBGA Industrial temperature 1.2V 512Mx16 8Gb Auto self-refresh Built-in temperature sensor Write leveling Dynamic ODT ZQ calibration CRC RoHS
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