MRF8S9170NR3 vs MRF8S9220HSR3 तुलना
विस्तृत दोनों ओर की तुलना MRF8S9170NR3 द्वारा NXP Semiconductors और MRF8S9220HSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
MRF8S9220HSR3 ✓ सक्रियविशेषता तुलना
| पैरामीटर | MRF8S9170NR3 | MRF8S9220HSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | NXP Semiconductors | — |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | RF Power LDMOS | LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode |
| Frequency Range | 920 MHz to 960 MHz | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | 50 W | — |
| Power Gain (Typical) | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias | — |
| Drain-Source Voltage Rating (Vdss) | 70 V | — |
| Operating Drain Voltage (Test Condition) | 28 V | — |
| Quiescent Bias Current (Idq, Test Condition) | 1 A | — |
| Drain Current (Operating) | [DATA_NEEDED: typical operating Id at 50 W Pout] | — |
| पैकेज | OM-780-2 (ceramic flange) | — |
| माउंटिंग प्रकार | Surface Mount / Flange Mount (bolt-down thermal pad) | Surface Mount / Flange Mount |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Tj max and operating range from datasheet] | — |
| Class of Operation | Class AB, Class C (W-CDMA) | — |
| Lead-Free / RoHS | Lead Free (per digchip listing) | Lead Free (per DigChip listing) |
| ESD Protection | [DATA_NEEDED: ESD class rating from datasheet] | — |
| Impedance Characterization | Series-equivalent large-signal impedance parameters provided | — |
| Test Conditions Note | 100% PAR tested for guaranteed output power capability | — |
| Output Power (Avg, W-CDMA) | — | 65 W |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Drain-Source Voltage Rating (VDS max) | — | 70 V |
| Power Gain (typ) | — | 19.4 dB |
| Test Drain Current | — | 1.6 A |
| Drain Efficiency (typ) | — | [DATA_NEEDED: drain efficiency %] |
| पैकेज / केस | — | NI-780S (Case 465-06, Style 1), ceramic |
| Package Dimensions (L x W x H) | — | 20.7 mm x 9.91 mm x 4.32 mm |
| Configuration | — | Single-ended, 1-carrier W-CDMA |
| ऑपरेटिंग जंक्शन तापमान | — | -65 C to +225 C |
| Modulation Support | — | W-CDMA, CDMA, LTE (Class AB / Class C) |