MRF8S9170NR3 vs MRF8S9220HSR3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF8S9170NR3 disebabkan oleh NXP Semiconductors dan MRF8S9220HSR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ Aktif
NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Aktif

Pengandingan Spesifikasi

Parametr MRF8S9170NR3 MRF8S9220HSR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors —
Jenis Transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Technology RF Power LDMOS LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode
Frequency Range 920 MHz to 960 MHz 920 MHz to 960 MHz
Output Power (Average, W-CDMA) 50 W —
Power Gain (Typical) 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias —
Drain-Source Voltage Rating (Vdss) 70 V —
Operating Drain Voltage (Test Condition) 28 V —
Quiescent Bias Current (Idq, Test Condition) 1 A —
Drain Current (Operating) [DATA_NEEDED: typical operating Id at 50 W Pout] —
Kemasan OM-780-2 (ceramic flange) —
Jenis Pemasangan Surface Mount / Flange Mount (bolt-down thermal pad) Surface Mount / Flange Mount
Suhu Operasi [DATA_NEEDED: Tj max and operating range from datasheet] —
Class of Operation Class AB, Class C (W-CDMA) —
Lead-Free / RoHS Lead Free (per digchip listing) Lead Free (per DigChip listing)
ESD Protection [DATA_NEEDED: ESD class rating from datasheet] —
Impedance Characterization Series-equivalent large-signal impedance parameters provided —
Test Conditions Note 100% PAR tested for guaranteed output power capability —
Output Power (Avg, W-CDMA) — 65 W
Operating Drain Voltage (VDD) — 28 V (typical)
Drain-Source Voltage Rating (VDS max) — 70 V
Power Gain (typ) — 19.4 dB
Test Drain Current — 1.6 A
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
Kemasan / Case — NI-780S (Case 465-06, Style 1), ceramic
Package Dimensions (L x W x H) — 20.7 mm x 9.91 mm x 4.32 mm
Configuration — Single-ended, 1-carrier W-CDMA
Suhu Hubungan Operasi — -65 C to +225 C
Modulation Support — W-CDMA, CDMA, LTE (Class AB / Class C)

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