MRF8S9170NR3 vs MRF8S9220HSR3 Perbandingan

Perbandingan bersamaan detil MRF8S9170NR3 dari NXP Semiconductors dan MRF8S9220HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ Aktif
NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum MRF8S9170NR3 MRF8S9220HSR3
Merek NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors —
Tipe Transistor LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Technology RF Power LDMOS LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode
Frequency Range 920 MHz to 960 MHz 920 MHz to 960 MHz
Output Power (Average, W-CDMA) 50 W —
Power Gain (Typical) 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias —
Drain-Source Voltage Rating (Vdss) 70 V —
Operating Drain Voltage (Test Condition) 28 V —
Quiescent Bias Current (Idq, Test Condition) 1 A —
Drain Current (Operating) [DATA_NEEDED: typical operating Id at 50 W Pout] —
Paket OM-780-2 (ceramic flange) —
Tipe Mounting Surface Mount / Flange Mount (bolt-down thermal pad) Surface Mount / Flange Mount
Suhu Kerja [DATA_NEEDED: Tj max and operating range from datasheet] —
Class of Operation Class AB, Class C (W-CDMA) —
Lead-Free / RoHS Lead Free (per digchip listing) Lead Free (per DigChip listing)
ESD Protection [DATA_NEEDED: ESD class rating from datasheet] —
Impedance Characterization Series-equivalent large-signal impedance parameters provided —
Test Conditions Note 100% PAR tested for guaranteed output power capability —
Output Power (Avg, W-CDMA) — 65 W
Operating Drain Voltage (VDD) — 28 V (typical)
Drain-Source Voltage Rating (VDS max) — 70 V
Power Gain (typ) — 19.4 dB
Test Drain Current — 1.6 A
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
Paket / Case — NI-780S (Case 465-06, Style 1), ceramic
Package Dimensions (L x W x H) — 20.7 mm x 9.91 mm x 4.32 mm
Configuration — Single-ended, 1-carrier W-CDMA
Suhu Hubung Kerja — -65 C to +225 C
Modulation Support — W-CDMA, CDMA, LTE (Class AB / Class C)

Spek dan Sumber

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