MRF8S9170NR3 vs MRF8S9220HSR3 比較

詳細並排比較 MRF8S9170NR3 由 NXP Semiconductors 與 MRF8S9220HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF8S9170NR3 MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP

MRF8S9170NR3 ✓ 啟用中
NXP Semiconductors
MRF8S9220HSR3 MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP

MRF8S9220HSR3 ✓ 啟用中

規格比較

參數 MRF8S9170NR3 MRF8S9220HSR3
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer NXP Semiconductors —
電晶體類型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET —
Technology RF Power LDMOS LDMOS (Laterally Diffused MOSFET), N-Channel Enhancement-Mode
Frequency Range 920 MHz to 960 MHz 920 MHz to 960 MHz
Output Power (Average, W-CDMA) 50 W —
Power Gain (Typical) 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias —
Drain-Source Voltage Rating (Vdss) 70 V —
Operating Drain Voltage (Test Condition) 28 V —
Quiescent Bias Current (Idq, Test Condition) 1 A —
Drain Current (Operating) [DATA_NEEDED: typical operating Id at 50 W Pout] —
封裝 OM-780-2 (ceramic flange) —
安裝類型 Surface Mount / Flange Mount (bolt-down thermal pad) Surface Mount / Flange Mount
工作溫度 [DATA_NEEDED: Tj max and operating range from datasheet] —
Class of Operation Class AB, Class C (W-CDMA) —
Lead-Free / RoHS Lead Free (per digchip listing) Lead Free (per DigChip listing)
ESD Protection [DATA_NEEDED: ESD class rating from datasheet] —
Impedance Characterization Series-equivalent large-signal impedance parameters provided —
Test Conditions Note 100% PAR tested for guaranteed output power capability —
Output Power (Avg, W-CDMA) — 65 W
Operating Drain Voltage (VDD) — 28 V (typical)
Drain-Source Voltage Rating (VDS max) — 70 V
Power Gain (typ) — 19.4 dB
Test Drain Current — 1.6 A
Drain Efficiency (typ) — [DATA_NEEDED: drain efficiency %]
封裝 / 外殼 — NI-780S (Case 465-06, Style 1), ceramic
Package Dimensions (L x W x H) — 20.7 mm x 9.91 mm x 4.32 mm
Configuration — Single-ended, 1-carrier W-CDMA
工作接面溫度 — -65 C to +225 C
Modulation Support — W-CDMA, CDMA, LTE (Class AB / Class C)

資料表與資源

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