1EDI20N12AFXUMA1 vs 2ED2183S06FXUMA1 Perbandingan
Perbandingan bersamaan detil 1EDI20N12AFXUMA1 dari Infineon dan 2ED2183S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | 1EDI20N12AFXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Configuration | Single high-side, isolated | — |
| Isolation Type | Galvanic (coreless transformer), reinforced | — |
| Number of Channels | 1 | — |
| Maximum Supply Voltage (Output Side) | 17 V | — |
| Minimum Supply Voltage (Output Side) | 3.1 V | — |
| Peak Source Current | 4.0 A (typical) | — |
| Peak Sink Current | 3.5 A (typical) | — |
| Working Voltage (Isolation) | 1200 V (high-side rail reference) | — |
| Propagation Delay | 120 ns (typical) | — |
| Konfigurasi Output | Separate source and sink pins | — |
| Short-Circuit Clamping | Yes (built-in) | — |
| Paket | PG-DSO-8-51 (DSO-8, 8-pin, narrow body) | PG-DSO-8-53 (DSO-8) |
| Rentang Suhu Kerja | -40 °C to +125 °C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 2 (per JEDEC J-STD-020) | 2 |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| Jumlah Output | — | 1 (half-bridge: high-side + low-side) |
| Configuration | — | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| Waktu naik | — | 15 ns |
| Waktu Menurun | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| Suhu Kerja | — | -40 C to +125 C |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |
| Status RoHS | — | Compliant |