1EDI20N12AFXUMA1 vs 2ED2183S06FXUMA1 比較
詳細並排比較 1EDI20N12AFXUMA1 由 Infineon 與 2ED2183S06FXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1EDI20N12AFXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Driver Configuration | Single high-side, isolated | — |
| Isolation Type | Galvanic (coreless transformer), reinforced | — |
| Number of Channels | 1 | — |
| Maximum Supply Voltage (Output Side) | 17 V | — |
| Minimum Supply Voltage (Output Side) | 3.1 V | — |
| Peak Source Current | 4.0 A (typical) | — |
| Peak Sink Current | 3.5 A (typical) | — |
| Working Voltage (Isolation) | 1200 V (high-side rail reference) | — |
| Propagation Delay | 120 ns (typical) | — |
| 輸出配置 | Separate source and sink pins | — |
| Short-Circuit Clamping | Yes (built-in) | — |
| 封裝 | PG-DSO-8-51 (DSO-8, 8-pin, narrow body) | PG-DSO-8-53 (DSO-8) |
| 工作溫度範圍 | -40 °C to +125 °C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 2 (per JEDEC J-STD-020) | 2 |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Driver Type | — | Half-Bridge Gate Driver |
| Number of Drivers | — | 1 |
| 輸出數量 | — | 1 (half-bridge: high-side + low-side) |
| Configuration | — | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | — | 650 V |
| Output Current (Sink/Source) | — | 2.5 A typical |
| 上升時間 | — | 15 ns |
| 下降時間 | — | 15 ns |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Bootstrap Supply (VBS) | — | 10 V to 20 V (typ.) |
| Logic Input Voltage | — | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | — | Non-Inverting |
| Bootstrap Diode | — | Integrated |
| Undervoltage Lockout (UVLO) | — | VCC and VBS |
| 工作溫度 | — | -40 C to +125 C |
| Terminal Finish | — | Tin (e3 per JESD-609) |
| Technology | — | SOI (Silicon-On-Insulator) |
| RoHS 狀態 | — | Compliant |