1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Perbandingan

Perbandingan bersamaan detil 1EDN7136UXTSA1 dari Infineon dan 1EDN7146UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7136UXTSA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Jumlah Output 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Rentang Suhu Kerja -40 C to +150 C -40C to +125C
Paket TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-1 (6-pin with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Bebas Halogen Yes (per Infineon product family convention) —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Waktu naik — [DATA_NEEDED: typical rise time ns]
Waktu Menurun — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Topology Support — Half-bridge, low-side, high-side

Spek dan Sumber

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