1EDN7136UXTSA1 vs 1EDN7146UXTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1EDN7136UXTSA1 disebabkan oleh Infineon dan 1EDN7146UXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1EDN7136UXTSA1 1EDN7146UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
Bilangan Output 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Gambaran Suhu Operasi -40 C to +150 C -40C to +125C
Kemasan TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-1 (6-pin with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes (per Infineon product family convention) —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
Masa Pertambahan — [DATA_NEEDED: typical rise time ns]
Masa jatuh — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Topology Support — Half-bridge, low-side, high-side

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