1EDN7136UXTSA1 vs 1EDN7146UXTSA1 比較

詳細並排比較 1EDN7136UXTSA1 由 Infineon 與 1EDN7146UXTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中

規格比較

參數 1EDN7136UXTSA1 1EDN7146UXTSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 High-side / Low-side gate driver IC —
Driven Device Type GaN HEMT, N-channel MOSFET —
輸出數量 2 (high-side and low-side) —
Peak Source Current 1 A —
Peak Sink Current 2 A —
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) —
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
工作溫度範圍 -40 C to +150 C -40C to +125C
封裝 TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-1 (6-pin with exposed pad)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
無鹵素 Yes (per Infineon product family convention) —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Driver Type — Single-channel high-side TDI gate driver
Maximum Blocking Voltage — 200 V
Input Configuration — Truly differential (TDI)
Output Current (Source / Sink) — 1.5 A / 2.5 A
Propagation Delay — [DATA_NEEDED: typical propagation delay ns]
上升時間 — [DATA_NEEDED: typical rise time ns]
下降時間 — [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range V]
Target Transistor — GaN SG HEMT or power MOSFET
Topology Support — Half-bridge, low-side, high-side

資料表與資源

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