1EDN7146UXTSA1 vs 1EDN7136UXTSA1 Perbandingan

Perbandingan bersamaan detil 1EDN7146UXTSA1 dari Infineon dan 1EDN7136UXTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 1EDN7146UXTSA1 1EDN7136UXTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
Waktu naik [DATA_NEEDED: typical rise time ns] —
Waktu Menurun [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
Rentang Suhu Kerja -40C to +125C -40 C to +150 C
Paket PG-VSON-1 (6-pin with exposed pad) TSNP-6 with exposed pad (PG-VSON-1)
Tipe Mounting Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Fungsi — High-side / Low-side gate driver IC
Driven Device Type — GaN HEMT, N-channel MOSFET
Jumlah Output — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Under-Voltage Lockout (UVLO) — Yes (driver supply and logic input)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Lead-Free — Yes
Bebas Halogen — Yes (per Infineon product family convention)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon