2ED21064S06JXUMA1 vs 2ED2103S06FXUMA1 Perbandingan

Perbandingan bersamaan detil 2ED21064S06JXUMA1 dari Infineon dan 2ED2103S06FXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2ED21064S06JXUMA1 2ED2103S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-Side and Low-Side Gate Driver Half-Bridge Gate Driver
Configuration Half-Bridge (2 outputs, non-inverting) Non-Inverting
Topologi High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated
Input Logic Compatibility 3.3 V / 5 V CMOS —
Suhu Kerja -40C to +125C —
Paket PG-DSO-14 (14-pin SOIC) PG-DSO-8-69 (DSO-8 with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Rentang Suhu Kerja — -40C to +125C

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