2ED21064S06JXUMA1 vs 2ED2103S06FXUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2ED21064S06JXUMA1 sa pamamagitan ng Infineon at 2ED2103S06FXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ Nakahanda
Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2ED21064S06JXUMA1 2ED2103S06FXUMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi High-Side and Low-Side Gate Driver Half-Bridge Gate Driver
Configuration Half-Bridge (2 outputs, non-inverting) Non-Inverting
Topolohiya High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated
Input Logic Compatibility 3.3 V / 5 V CMOS —
Temperature na Operasyon -40C to +125C —
Packhaging PG-DSO-14 (14-pin SOIC) PG-DSO-8-69 (DSO-8 with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Tindminan RoHS ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Hanay ng Temperature na Operasyon — -40C to +125C

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita