2ED21064S06JXUMA1 vs 2ED2103S06FXUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 2ED21064S06JXUMA1 disebabkan oleh Infineon dan 2ED2103S06FXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 2ED21064S06JXUMA1 2ED2103S06FXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi High-Side and Low-Side Gate Driver Half-Bridge Gate Driver
Configuration Half-Bridge (2 outputs, non-inverting) Non-Inverting
Tetstruktur High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated
Input Logic Compatibility 3.3 V / 5 V CMOS —
Suhu Operasi -40C to +125C —
Kemasan PG-DSO-14 (14-pin SOIC) PG-DSO-8-69 (DSO-8 with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Status RoHS ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Gambaran Suhu Operasi — -40C to +125C

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