2EDL8033G4BXTMA1 vs 2EDL6014ACG2DXTMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4BXTMA1 dari Infineon dan 2EDL6014ACG2DXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4BXTMA1 2EDL6014ACG2DXTMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Topologi Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) 2 (high-side + low-side)
Isolation Type Junction-isolated (non-galvanic) Isolated (level-shifted floating high-side)
Input Logic Compatibility TTL —
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Paket PG-VDSON-8-5 11-WQFN (2.2 x 2.2 mm) with exposed pad
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge Gate Driver
Konfigurasi Output — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Suhu Kerja — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon