2EDL8033G4BXTMA1 vs 2EDL6014ACG2DXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 2EDL8033G4BXTMA1 sa pamamagitan ng Infineon at 2EDL6014ACG2DXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 2EDL8033G4BXTMA1 2EDL6014ACG2DXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Topolohiya Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) 2 (high-side + low-side)
Isolation Type Junction-isolated (non-galvanic) Isolated (level-shifted floating high-side)
Input Logic Compatibility TTL —
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
Packhaging PG-VDSON-8-5 11-WQFN (2.2 x 2.2 mm) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge Gate Driver
Output Kumpigurasyon — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
Temperature na Operasyon — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

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