2EDL8033G4BXTMA1 vs 2EDL6014ACG2DXTMA1 比較

詳細並排比較 2EDL8033G4BXTMA1 由 Infineon 與 2EDL6014ACG2DXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 啟用中

規格比較

參數 2EDL8033G4BXTMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
拓撲 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) 2 (high-side + low-side)
Isolation Type Junction-isolated (non-galvanic) Isolated (level-shifted floating high-side)
Input Logic Compatibility TTL —
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
封裝 PG-VDSON-8-5 11-WQFN (2.2 x 2.2 mm) with exposed pad
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Marking Code 2ED8033G4B —
Driver Type — Half-Bridge Gate Driver
輸出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作溫度 — -40 C to +125 C
Packing Method — Tape & Reel
Technology Family — EiceDRIVER 2EDL

資料表與資源

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