BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil BSC076N06NS3GATMA1 dari Infineon dan BSC117N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC076N06NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 69 W | 50 W |
| Rentang Suhu Kerja | -55C to +150C | -55 C to +150 C (typical MOSFET junction) |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited) | 1 |
| RoHS Compliance | Compliant | — |
| Bebas Halogen | Yes (per Infineon product page) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Jumlah Pin | — | 8 |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |