BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC076N06NS3GATMA1 disebabkan oleh Infineon dan BSC117N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC076N06NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 69 W | 50 W |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +150 C (typical MOSFET junction) |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | 1 |
| RoHS Compliance | Compliant | — |
| Boson Bebas | Yes (per Infineon product page) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Kiraan Pin | — | 8 |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |