BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 比較

詳細並排比較 BSC076N06NS3GATMA1 由 Infineon 與 BSC117N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 啟用中
Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ 啟用中

規格比較

參數 BSC076N06NS3GATMA1 BSC117N08NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 5
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 50 W
工作溫度範圍 -55C to +150C -55 C to +150 C (typical MOSFET junction)
封裝 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) 1
RoHS Compliance Compliant —
無鹵素 Yes (per Infineon product page) —
Part Number — BSC117N08NS5ATMA1
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) max — 49 A (Tc)
On-State Resistance (RDS(on)) max — 11.7 mOhm
腳位數 — 8
RoHS 狀態 — Compliant
Lead-Free — Yes

資料表與資源

瀏覽所有產品 建立 BOM 索取報價