BSC520N15NS3 vs CSD19534Q5A Perbandingan
Perbandingan bersamaan detil BSC520N15NS3 dari Infineon dan CSD19534Q5A dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC520N15NS3 | CSD19534Q5A |
|---|---|---|
| Merek | Infineon | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 3, N-channel trench MOSFET | NexFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | 8-VSONP (5x6 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | 1-260C-UNLIM |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| On-Resistance RDS(on) | — | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | — | 3.2 W |
| Power Dissipation (Tc) | — | 63 W |
| Rentang Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Jumlah Pin | — | 8 |