BSC520N15NS3 vs CSD19534Q5A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC520N15NS3 disebabkan oleh Infineon dan CSD19534Q5A disebabkan oleh Texas Instruments. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ AktifPengandingan Spesifikasi
| Parametr | BSC520N15NS3 | CSD19534Q5A |
|---|---|---|
| Merek | Infineon | Texas Instruments |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 3, N-channel trench MOSFET | NexFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | 8-VSONP (5x6 mm) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | 1-260C-UNLIM |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| On-Resistance RDS(on) | — | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | — | 3.2 W |
| Power Dissipation (Tc) | — | 63 W |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Kiraan Pin | — | 8 |