BSC520N15NS3 vs CSD19534Q5A Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC520N15NS3 sa pamamagitan ng Infineon at CSD19534Q5A sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC520N15NS3 | CSD19534Q5A |
|---|---|---|
| Brand | Infineon | Texas Instruments |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 3, N-channel trench MOSFET | NexFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | 8-VSONP (5x6 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1-260C-UNLIM |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| On-Resistance RDS(on) | — | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | — | 3.2 W |
| Power Dissipation (Tc) | — | 63 W |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Bilang ng Pin | — | 8 |