BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSD235CH6327XTSA1 dari Infineon dan BSL308CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSD235CH6327XTSA1 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) 20 V 30 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
Rentang Suhu Kerja -55 °C to +150 °C (junction) -55 °C to +150 °C
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Jumlah Pin 6 —
Product Family — OptiMOS™ low-voltage power MOSFETs
Paket — PG-TSOP6-6 (TSOP-6, 6 pins)
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Bebas Halogen — Yes (per Infineon product family convention)

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