BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSD235CH6327XTSA1 disebabkan oleh Infineon dan BSL308CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSD235CH6327XTSA1 BSL308CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) 20 V 30 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
Gambaran Suhu Operasi -55 °C to +150 °C (junction) -55 °C to +150 °C
Polarity N-channel + P-channel —
Channel Mode Enhancement —
Status RoHS Compliant (lead-free) Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Kiraan Pin 6 —
Product Family — OptiMOS™ low-voltage power MOSFETs
Kemasan — PG-TSOP6-6 (TSOP-6, 6 pins)
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Boson Bebas — Yes (per Infineon product family convention)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga