BSL606SNH6327XTSA1 vs BSP295H6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSL606SNH6327XTSA1 dari Infineon dan BSP295H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSL606SNH6327XTSA1 | BSP295H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Technology | OptiMOS3 trench MOSFET | Planar N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 4.5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 60 mOhm (max, VGS = 10 V) | — |
| Total Power Dissipation (PD) at Ta | 2 W | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 5.6 nC (max) | — |
| Rentang Suhu Kerja | -55C to +150C (Tj) | -55 °C to +150 °C |
| Paket | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) | PG-SOT223-4 (3 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Status RoHS | Compliant (Pb-free plating) | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | — | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | — | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | — | 300 mΩ |
| Tape and Reel Packing Code | — | H6327 (7-inch reel) |
| Channel Mode | — | Enhancement |
| Drain Tab Connection | — | Pin 4 (tab) |