BSL606SNH6327XTSA1 vs BSP295H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL606SNH6327XTSA1 disebabkan oleh Infineon dan BSP295H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL606SNH6327XTSA1 BSP295H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET (Enhancement Mode) N-Channel MOSFET
Technology OptiMOS3 trench MOSFET Planar N-channel MOSFET
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge (Qg) 5.6 nC (max) —
Gambaran Suhu Operasi -55C to +150C (Tj) -55 °C to +150 °C
Kemasan PG-TSOP6-6 (6-pin, SOT-23-6 compatible) PG-SOT223-4 (3 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Status RoHS Compliant (Pb-free plating) Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Ta=25 °C — 1.8 A
Power Dissipation (PD) at Ta=25 °C — 1.8 W
Drain-Source On-Resistance RDS(on) max — 300 mΩ
Tape and Reel Packing Code — H6327 (7-inch reel)
Channel Mode — Enhancement
Drain Tab Connection — Pin 4 (tab)

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