BSL606SNH6327XTSA1 vs BSP295H6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSL606SNH6327XTSA1 sa pamamagitan ng Infineon at BSP295H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon
BSL606SNH6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSL606SNH6327XTSA1 | BSP295H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Technology | OptiMOS3 trench MOSFET | Planar N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 4.5 A | — |
| Static Drain-Source On-Resistance (RDS(on)) | 60 mOhm (max, VGS = 10 V) | — |
| Total Power Dissipation (PD) at Ta | 2 W | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 5.6 nC (max) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (Tj) | -55 °C to +150 °C |
| Packhaging | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) | PG-SOT223-4 (3 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Tindminan RoHS | Compliant (Pb-free plating) | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Ta=25 °C | — | 1.8 A |
| Power Dissipation (PD) at Ta=25 °C | — | 1.8 W |
| Drain-Source On-Resistance RDS(on) max | — | 300 mΩ |
| Tape and Reel Packing Code | — | H6327 (7-inch reel) |
| Channel Mode | — | Enhancement |
| Drain Tab Connection | — | Pin 4 (tab) |