BSP92PH6327XTSA1 vs BSP135H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP92PH6327XTSA1 dari Infineon dan BSP135H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP92PH6327XTSA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 600 V
Continuous Drain Current (ID) -260 mA (Ta) 120 mA
Power Dissipation (PD) 1.8 W (Ta) 1.8 W
Paket PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223-3 plus tab)
Tipe Mounting Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Kerja -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level MSL 1 (unlimited) 1
Jumlah Pin 4 (Gate, Drain, Drain, Source) —
Part Number — BSP135H6327XTSA1
FET Type — N-Channel, Depletion Mode
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
Rentang Suhu Kerja — -55C to +150C (junction, typical)
Status RoHS — Compliant

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