BSP92PH6327XTSA1 vs BSP135H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP92PH6327XTSA1 sa pamamagitan ng Infineon at BSP135H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP92PH6327XTSA1 BSP135H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Uri ng Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 600 V
Continuous Drain Current (ID) -260 mA (Ta) 120 mA
Power Dissipation (PD) 1.8 W (Ta) 1.8 W
Packhaging PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223-3 plus tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Channel Polarity P-Channel —
Temperature na Operasyon -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Level ng MSL 1 (unlimited) 1
Bilang ng Pin 4 (Gate, Drain, Drain, Source) —
Part Number — BSP135H6327XTSA1
FET Type — N-Channel, Depletion Mode
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
Hanay ng Temperature na Operasyon — -55C to +150C (junction, typical)
Tindminan RoHS — Compliant

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