BSP92PH6327XTSA1 vs BSP135H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP92PH6327XTSA1 disebabkan oleh Infineon dan BSP135H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP92PH6327XTSA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V 600 V
Continuous Drain Current (ID) -260 mA (Ta) 120 mA
Power Dissipation (PD) 1.8 W (Ta) 1.8 W
Kemasan PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (SOT-223-3 plus tab)
Jenis Pemasangan Surface Mount Surface Mount
Channel Polarity P-Channel —
Suhu Operasi -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
Aras MSL 1 (unlimited) 1
Kiraan Pin 4 (Gate, Drain, Drain, Source) —
Part Number — BSP135H6327XTSA1
FET Type — N-Channel, Depletion Mode
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)
Technology — SIPMOS (planar DMOS)
Gambaran Suhu Operasi — -55C to +150C (junction, typical)
Status RoHS — Compliant

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