BSS138LT1G vs MMBF170LT1 Perbandingan

Perbandingan bersamaan detil BSS138LT1G dari onsemi dan MMBF170LT1 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS138LT1G MMBF170LT1
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) 500 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
Paket SOT-23-3 (TO-236) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Status RoHS Compliant (RoHS Compliant and Pb-free per Easybom) Compliant (per onsemi product page)
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Rentang Suhu Kerja — -55 °C to +150 °C (TJ max per datasheet)
Paket / Case — SOT-23-3 (TO-236)
Jumlah Pin — 3
AEC-Q101 Qualified — Yes (per datasheet)
Technology — DMOS
Polarity — N-Channel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon