BSS138LT1G vs MMBF170LT1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSS138LT1G sa pamamagitan ng onsemi at MMBF170LT1 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSS138LT1G MMBF170LT1
Brand onsemi onsemi
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) 500 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
Packhaging SOT-23-3 (TO-236) —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Tindminan RoHS Compliant (RoHS Compliant and Pb-free per Easybom) Compliant (per onsemi product page)
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (TJ max per datasheet)
Packhaging / Kaso — SOT-23-3 (TO-236)
Bilang ng Pin — 3
AEC-Q101 Qualified — Yes (per datasheet)
Technology — DMOS
Polarity — N-Channel

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