BSS138LT1G vs MMBF170LT1 比較

詳細並排比較 BSS138LT1G 由 onsemi 與 MMBF170LT1 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSS138LT1G MMBF170LT1
品牌 onsemi onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) 500 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
封裝 SOT-23-3 (TO-236) —
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 Compliant (RoHS Compliant and Pb-free per Easybom) Compliant (per onsemi product page)
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
工作溫度範圍 — -55 °C to +150 °C (TJ max per datasheet)
封裝 / 外殼 — SOT-23-3 (TO-236)
腳位數 — 3
AEC-Q101 Qualified — Yes (per datasheet)
Technology — DMOS
Polarity — N-Channel

資料表與資源

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